ion beam current 中文意思是什麼
ion beam current
解釋
離子束電流-
Numerical simulation of the beam optics characteristics in a high energy and high current negative ion beam system
高能強流負離子束系統束光學特性的數值模擬 -
The experimental results show that the n contents in the multilayers are higher at the lower incidence ion energy and current. the n contents increase with the increasing of the substrate temperature. the n contents in the films also arose by using the assisted ion beam
實驗結果表明：入射離子能量較低、束流較低時，制得薄膜的n含量較高；升高溫度能增加薄膜中的n含量；輔助離子束的使用同樣增加了薄膜中的n含量；獲得的cn _ x tin _ y薄膜的最高含n量為49 . 52at 。 -
The results show that ti2n ( 200 ) tropism interplanar is obtained when the ion beam energy is 875ev and the current is 60ma. the ti2n crystals embed in the films deposited at low temperature, while tin crystals are formed at high temperature. the analyses of component show that the tiny films are rich - nitrogen
結果表明：在能量為875ev 、束流為60ma時獲得取向較好的ti _ 2n （ 200 ）晶面；低溫沉積的薄膜的主晶相為ti _ 2n ，高溫沉積時為tin ；成分分析表明tin _ y薄膜是富氮的。 -
The maximum output of ion beam current is obtained at a charging voltage of 8 kv for the magnetic field power system, which is in accordance with the theory of magnetic insulation. the ion beam parameters are an accelerating voltage of 300 kv, an ion current density of 300 a / cm2 with beam pu lse width of 80 ns and with composition of 70 % proton and 30 % carbon ions
在磁場電源電壓為8kv ，獲得了與磁絕緣理論相符的最大離子束流密度輸出，離子束參數為：加速電壓300kv ，離子束流密度300a cm ~ 2 ，離子束脈沖寬度80ns ，成分約為70 h離子和30 c離子。 -
At the delay time when the area on the anode surface bombarded by electrons expands to a maximum field, the upper limit of ion beam current output is reached. the ion beam parameters are an accelerating voltage of 220 kv, an ion current density of 350 a / cm2 with beam pulse width of 70 ns and with composition of 30 % proton and 70 % carbon ions
在電子流對陽極轟擊面積達到最大所對應的延遲時間，獲得了最大離子束流密度輸出，離子束參數為： 220kv ， 350a cm ~ 2 ， 70ns ，成分約為30 h離子和70 c離子，離子束流密度的波動同樣可控制在20 。
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