ion implantation 中文意思是什麼

ion implantation 解釋
離子注入技術〈製造半導體的一個程序〉。

  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • implantation : n. 1. 種植。2. 插入；灌輸，鼓吹。3. 【醫學】皮下注射。
  1. In the experimental studies on the behaviors of helium in aluminum, ion implantation technique was adopted to introduce helium with different energies, doses and distributions into some specimen of monocrystal, polycrystal, and preferred orientation as to the structure of aluminum. the energies varied in the range of 50ev to 4. 87mev. the corresponding helium peak depths by trim simulation varied in the range of 16 angstrom to 20. 7 microns

    在金屬鋁中氦行為的實驗研究中，首先用離子注入技術在單晶、多晶以及擇優取向的鋁樣品中引入不同能量、劑量和濃度分佈的he原子，能量范圍從50ev 4 . 87mev ， trim模擬的he濃度峰值的深度范圍為16 （
  2. Generic specification for ion implantation equipment

    離子注入機通用技術條件
  3. Mutagenic effects of ion implantation on stevia

    離子注入甜菊的誘變效應研究
  4. Surface modification of h13 steel by ti - ion implantation

    13鋼表面改性研究
  5. Formation of la silicides by mevva ion implantation

    源離子束合成鑭硅化物
  6. Study of nd silicides synthesis by mevva source ion implantation

    源離子注入合成釹硅化物的研究
  7. Plasma immersion ion implantation into insulating materials

    等離子體浸沒離子注入絕緣材料的研究
  8. High flux metal ion implantation

    硅離子注入聚合物摩擦特性研究
  9. Modification of polyaniline thin films by low energy ion implantation

    低能離子注入對聚苯胺薄膜的改性研究
  10. Application research for prolonging life of aero - bearing with ion implantation

    離子注入航空軸承延壽應用研究
  11. The effect of ion implantation on the giant magnetoresistance of granular film

    離子束改性對顆粒膜巨磁電阻效應的影響
  12. Fabrication of ohmic contacts to 4h - sic created by ion - implantation

    離子注入層的歐姆接觸的制備
  13. The distribution fractions of mutants with higher avermectin titer than the original had correlation with implantation dose. after ion implantation mutation there were many types of morphology of colony, we stdudied the relationship between the colony shape and the ability of yielding, found that gray and protuberant colony had the highest titer

    離子注入后阿維鏈黴菌的菌落形態發生了很大的變化，其中灰色，邊緣整齊，中間突出有開裂的菌落和為灰色，邊緣波浪狀，中間突出有放射狀開裂的菌株產量較高。
  14. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  15. Low - energy ion implantation has been considered as a new kind of mutation breeding and foreign gene delivery techniques. by the means of implanting low - energy ions into organisms, the biological effects and the function mechanisms of the technique were investigated by some researchers

    離子束生物技術是一種新型的生物誘變技術，它是通過將低能離子束注入生物體內，來研究其生物學效應和作用機理，並將它應用於遺傳育種和基因工程等方面的一種綜合技術。
  16. The 3t3 mouse fibroblasts and human endothelial cells cultured on the surface of the implanted pp showed much better attachment and proliferation than that for controlled pp. at the same time, the cooft ion implantation also exhibited low macrophage attachment with normal cellular morphology. the above results can cause positive effects on the biocompa tibility when it is used as implant material

    研究表明，離子注入后聚丙烯表面的親水性和血液相容性研究表明，通過對pp表面進行cooh ~ +離子注入處理，可以降低其表面能和水接觸角，提高其抗凝血性能和抗鈣化性能，並且pp的抗凝血性能與cooh ~ +離子的注入劑量具有很大的相關性。
  17. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  18. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。
  19. Abstract : this paper introduces the application and development of ion plating, ionodialysis, ion implantation and the compound technology

    文摘:介紹了離子鍍、離子滲、離子注入及其復合工藝的應用與發展。
  20. For instance, the dwarf character in the plants treated with the dose of 80 x1015 was stable in inheritance in consecutive three generations. thus it can be seen that low - energy ion implantation causes developmental state changes and phenotypic variations and some changes and variations can be inherited stably

    以上結果充分顯示低能離子能夠引起生物體dna產生變異，從而導致表型的變異，是一種有效的誘變劑，表明離子柬生物技術是一種非常有效的物理誘變技術，在生產實際中具有廣泛的應用價值。
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