ion sputtering 中文意思是什麼
-
Newly - developed miniaturized compound sputtering ion pump
微型復合濺射離子泵的設計研究 -
This paper mainly discusses the designing and testing method to the dds acousto - optic mode locking. it also makes some further analysis on the critical technology - - - - - - the transducer acoustical membrane matching and transducer thinning, which can directly affect the performance of acousto - optic elements. it then analyses the heat effect of acousto - optic elements and the technology of transducer thinning by developing ion - beam sputtering of high frequency acousto - optic elements
本文重點討論了dds聲光鎖模器的設計及測試方法，討論和分析了影響聲光器件性能的關鍵工藝換能器聲學膜層匹配和換能器減薄工藝，對聲光器件的熱效應進行了測試分析，對離子刻蝕法聲光換能器減薄新工藝作了一定的探討。 -
Surface states and the topmost surface atoms of the batio3 thin films have been analyzed by x - ray photoelectron spectroscopy ( xps ) and angle - resolved x - ray photoelectron spectroscopy ( arxps ). the results show that the as - grown batio3 thin films have an enriched - bao nonstoichiometric surface layer which can be removed by ar + ion sputtering, and the atomic ratio of ba to ti decreases with increasing the depth of ar + ion sputtering
用x射線光電子能譜技術（ xps ）和角分辨x射線光電子能譜技術（ arxps ）研究了薄膜的表面化學態以及最頂層原子種類和分佈狀況，結果顯示在熱處理過程中薄膜表面形成一層富含bao的非計量鈦氧化物層，並且鋇-鈦原子濃度比隨著探測深度的增大而逐漸減小。 -
We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem
論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。 -
In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere
我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。 -
Study on the fabricating method the fe / al2o3 / fe mtj and co / al2o3 / feni mtj are prepared by ion - beam sputtering systems. the fexcu ( 1 - x ) granule films were evaporated directly using a high vacuum electron beam evaporation. some samples of granule films are annealed at 340c
用高真空鍍膜機制備了fe _ xcu _ （ （ 1 - x ） ）系列顆粒膜，並對部分膜做了加熱退火處理，樣品被加熱到340並且保溫2小時。 -
The testing technique and system of the newly developed, miniaturized sputtering ion pump with low pumping speed has been developed in accordance with the standards formulated by machine industry
摘要本文介紹了小抽速微型濺射離子泵的性能測試系統和參考機械行業標準確定的測試方法，探討了測量結果誤差來源。 -
Ion sputtering coator
離子濺射鍍膜臺 -
Property comparison of optical thin films prepared by e - beam, ion assisted deposition and ion beam sputtering
離子輔助和離子束濺射三種工藝對光學薄膜性能的影響 -
In this thesis, we research the characters on the ion beam sputtering system, and prepare tiny films and cnx / tiny multilayers by ion beam sputtering. the best parameters of preparing cnx films are explored. we use the tiny films as template to promote the growth of cnx films
本文對離子源的濺射特性進行了研究，採用離子束濺射法制備了tin _ y單層薄膜和cn _ x tin _ y多層薄膜，探索該法制備cn _ x薄膜的最佳工藝參數，並利用tin _ y薄膜為襯底以促進cn _ x薄膜的生長。 -
The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward
綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。 -
Ion beam sputtering system
離子束濺鍍系統 -
With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility
隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。 -
Centering at soft x - ray multilayer uniformity technology, we introduce general situation of multilayer, design of multilayer structure, simulation calculation, ion - beam sputtering deposition and evaluation of samples. above all, we carry out study of improving uniformity of period thickness spatial distribution, and develop correction mask for controlling period thickness. as a result, we improve uniformity from 4. 5 % to 2. 0 %, the error of period thickness on ( 130nm field is controlled within 0. 18nm, and the reflectivity reach 35 % at center wavelength 17. 1nm
特別地，我們設計並應用膜厚擋板補償技術控制多層膜的膜厚分佈，將膜厚分佈非均勻性從4 . 5減小到2 ，周期厚度絕對差值控制在0 . 18nm以內，並且制備得實際多層膜樣品在中心波長17 . 1nm處實測反射率達到35 ，達到實用水平。 -
Meanwhile a new method was developed to prepare vo2 thin film directly from v2o5 powder. pressed v2o5 powder of 99. 7 % purity was used as sputtering target by argon ion beam
發展了一種用離子束增強沉積從v _ 2o _ 5粉末制備vo _ 2薄膜的新方法。 -
( 3 ) the simulation results of rare gas ion ( argon is used here ) sputtering metal ( al is used here ) to deposit films, which are in good agreement with the fundamental experimental results
（ 3 ）運用模擬程序模擬了惰性氣體（ ar ）離子對金屬靶（ al ）濺射成膜的過程，模擬結果符合一般的實驗結果及其規律。 -
Keywords : gims, ion source, anode layer, sputtering, tin, ion plating ， medium frequency, pulsed dc
中文關鍵詞：氣離濺射、離子源、陽極層流、濺射、氮化鈦、離子鍍膜、中頻、脈沖直流。
分享友人