irradiation dosage 中文意思是什麼
irradiation dosage
解釋
照射劑量- irradiation : n. 1. 照耀；發光。2. 闡明，啟發。3. 【物理學】光滲，照光，輻照。4. 【醫學】照射。5. 擴散。
- dosage : n. 1. 下藥，配藥。2. 劑，劑量，服用量。3. （酒的）增味劑；增味；配料。
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" body gamma knife is mainly used for curing all kinds of body tumors, and the latest generation three - dimensional directional actinotherapy devices. it incorporates many modern high - techs and effectively break through the limit of actinotherapy devices available while precisely focused and three - dimensional directional. it also has adjusted actinotherapy, wide range irradiation and common actinotherapy, and protects the normal organism from damage at best while its dosage precisely destroys tumor organism
「體部伽瑪刀」主要用於治療各種體部腫瘤，是目前世界上最新一代立體定向放療設備，它吸收了眾多現代高新技術成果，有效地突破了現有放射治療設備的局限，兼備精確聚焦立體定位等優點，具有適形調強放療大野照射及普通放療等多種功能，能夠在劑量準確摧毀腫瘤組織的同時，最大程度地保護正常組織免受損傷。 -
Nano - zns : mn2 + dispersed in pvb film has the same enhancement after exposure in solar light. the material has potential on measuring the dosage of uv irradiation of solar light
薄膜樣品在太陽光輻照下同樣有熒光增強行為，預示該樣品可以作為一種紫外輻照劑量的記錄材料。 -
Moreover, concentrations of interstitial oxygen in samples changed after fast neutron irradiation. the interstitial oxygen concentration of the samples decreased with increasing of irradiation dosage. this result can be explained in terms of higher generation rates of ( v - o ) complex
另外，快中子輻照對于直拉硅的間隙氧含量有很大影響，間隙氧含量隨著輻照劑量的增加而減少，這主要歸于樣品中產生了大量的（ v - o ）復合體。 -
In czochralski silicon crystals ( czsi ) through fast neutron irradiation, formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ), positron annihilation technology ( pat ) and scanning electron microscope ( sem ). the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron, positron annihilation average lifetime of samples increased with increasing of irradiation dosage. positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n. cm - 2 tended to constant
本文對直拉硅樣品進行了不同劑量的快中子輻照，在硅中引入大量的亞穩態缺陷，研究這些亞穩態缺陷的形成，並在較寬的溫度范圍內對輻照樣品進行了退火處理，研究退火后亞穩態缺陷的轉化及同硅中氧的相互作用，應用傅立葉變換紅外光譜技術（ ftir ） 、正電子湮沒技術（ pat ）和掃描電鏡（ sem ）進行了測試。
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