junction depth 中文意思是什麼
junction depth
解釋
結深度-
From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices
此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分佈，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。 -
Another test method for junction depth
測試結深的另一種方法 -
In the second one, we firstly compared two kinds of solar cells in industry and analyzed their junction depth and doping concentration
第二部分研究了p - n結及鋁背場對太陽電池特性的影響。 -
It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established
通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。 -
Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance. the formation theory of aluminum - alloyed back surface field, the effect parameters to the doping concentration and the junction depth were analyzed
比較了兩種商業太陽電池的雜質濃度分佈及結深情況；敘述了鋁背場的作用及形成原理，對影響鋁背場表面濃度和結深的參數作了分析。 -
The sensor operation speed can be 64ms / frame ~ 2ms / frame. in the research of photoelectric cell, device physics structure of pixels have been optimized. deep junction depth photodiodes, such as p + / n - well / p - sub structure, have been used and the photo - response of the sensor has been greatly enhanced
復位信號為sv時的單幀感光動態范圍為60db ，採用改變復位信號頻率的二次掃描方式可將傳感器的總的感光動態范圍擴大到84db ，可對0石10 ， 000lx光照強度的信號進行傳感。 -
In the paper the structure and principle of the secondary ion mass spectrometry ( sims ) are reported, and its typical applications in the hgcdte material and devices processing, especially in the measurement of the junction depth and the quantity analysis of trace impurity are introduced
摘要文章介紹了二次離子質譜儀的結構及其基本工作原理，並通過對典型應用的分析，介紹了二次離子質譜分析技術在高靈敏度碲鎘汞紅外焦平面探測器材料和器件制備工藝中的作用，特別是在結探監測和微量雜質監控方面所發揮的重要作用。 -
The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。 -
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
The simulation results indicate, deep - trench junction termination with certain width, depth and filling with isolated dielectric can increase the avalanche breakdown voltage of devices to above 95 % of the ideal value
結果表明：具有一定寬度、深度且填充絕緣介質的深阱結終端結構，阻止了結的橫向擴展，並能將器件的雪崩擊穿電壓提高到理想值的95以上。 -
Analysing the connection between soil temperature of the earth ' s surface and hereinafter 5cm, 10cm, 15cm, 20cm, 40cm and ground water depth, eliciting that temperature of soil underground 10 cm and ground water depth has junction. 3
分析了地表及地表以下5cm 、 10cm 、 15cm 、 20cm 、 40cm土壤溫度，與地下水埋深間的相關性，得到結論地表以下10層面的土壤溫度與地下水埋深相關性最大。 -
Based on this model, it was presented that how to select the thickness of epilayer, the doping concentration of epilayer, schottky contact, the width of pn grid, the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics
基於此模型，提出在對正反向特性進行折衷時，如何選擇合適的外延層摻雜濃度和厚度、肖特基接觸和pn結網格寬度、 pn結深度和摻雜濃度。 -
Yards and a depth of 30 ft. each day 5. 7 million gallons of water could be filtered. after being filtered, water passed through the 18 - inch diameter pipe to the storage tank at the junction of garden road and bowen road. the tai tam valley scheme was gigantic even for the first phase, in 1883 - 1888, costing the government 1, 250, 000 dollars
大潭的供水系統工程龐大，單在1883 1888年第一期的工程已耗資125萬元，較薄扶林水塘總支出50萬元，高出一倍有多，而大潭水塘擬興建的容量為2 -
Depth - averaged turbulence models for flow simulation at equal - width open - channel junction
等寬明渠交匯水流數值計算
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