junction transistor 中文意思是什麼

junction transistor 解釋
接合（式）電晶體。

  • junction : n. 1. 接合，連接，連絡。2. 接合點，交叉點，（河流的）匯合處，（鐵道的）聯軌點。3. 【電學】中繼線。4. 【物理學】接頭，結。
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. The concepts described above are embodied in the junction transistor.

    上述各種概念都反映在結型晶體管中。
  2. Jfet junction type field effect transistor

    結型場效應晶體管
  3. Hetero - junction bipolar transistor hbt

    異質接面雙載子晶體管
  4. Bipolar junction transistor - bjt

    雙極結型晶體管
  5. Bipolar junction transistor, bjt

    雙載子晶體管
  6. Bipolar junction transistor

    雙極面結型晶體管
  7. Point - junction transistor

    點接合型晶體管
  8. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  9. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  10. A lcc multi - resonant ( mr ) network is added to the traditional three - level converters to realize zvs. the unique arrangement of a multi - resonant network results in absorption of all major parasitic components hi the resonant circuit, such as transistor output capacitance, diode junction capacitance and transformer leakage inductance, which can eliminate parasitic oscillation in the converter

    它的優點在於諧振電容吸收了開關管和續流二極體的結電容，諧振電感吸收了變壓器的漏感，使得開關管和續流二極體都能在軟開關的條件下完成導通和關斷過程，消除了電路中的寄生振蕩。
  11. In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of pn junction and schottky junction

    為了理解有機靜電感應三極體的肖特基柵極原理，本文在第二章闡述了pn結和肖特基結的特性。
  12. To increase the accuracy of the test method, a steady - state operation life test method with additional measuring and strictly controlling transistor junction temperature, in the highest temperature range, is given

    旨在提高晶體管穩態工作壽命試驗方法的可信度，提出了一種在試驗過程中實時測量並嚴格控制晶體管結溫在最高允許結溫附近的穩態工作壽命試驗方法。
  13. Analyzing the various problems of current steady - state operation life test standard, it is pointed out that, not measuring and controlling, transistor junction temperature in current transistor steady - state operation life test can lead to fatal inaccuracy of the test results

    摘要在分析了現行標準中晶體管穩態工作壽命試驗方法存在問題的基礎上，認為在現行的穩態工作壽命試驗中沒有對晶體管的結溫實施測量和控制，是導致試驗結果不準確的重要原因。
  14. In order to comprehend operational principle and characteristics of organic static induction transistor, chapter three expatiates operational principle and characteristics of junction field effect transistor and static induction transistor

    為了理解有機靜電感應三極體的工作原理和特性，第三章闡述了結型場效應三極體和靜電感應三極體的工作原理和特性。
  15. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  16. This paper realized frequency modulation using the video signal to directly control the resonance loop ' s diode of the vco at the early stages, and then through using radio frequency bipolar junction transistor, designed a lc voltage controlled oscillator which was emulated by advance design system. in addition, it also implemented the design and debugged the hardware circuit

    本文第一次實驗採用視頻信號直接控制vco諧振迴路變容二極體的方式實現頻率調制，並且利用射頻雙極性晶體管（ bjt ）設計了一種lc壓控振蕩器，通過ads軟體進行了參數模擬，最後進行了硬體電路的製作和調試。
  17. There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication

    目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。
  18. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
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