large wafer 中文意思是什麼
large wafer
解釋
大扁平頭-
Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。 -
During the course of the manufacture for packaging 2000 pixel hgcdte irfpa wafer, some crucial techniques are solved, such as the design of the button stem structures with inclined dragging wires applied in cryogenic platform, the optimization of long linear irfpa detector ' s signal wires layouts, the implement of a fanout board having thin film gold metalization for defining the required electrical conductors and a method of hermetically sealed vacuum enclosure of large dimension windows, etc
在用於封裝2000元碲鎘汞焦平面晶元的分置式微型杜瓦研製中，詳細闡明了一種焦平面晶元其裝載面為斜拉式支撐結構的設計，實現了探測器外引功能線的布線優化及其輸出引線工藝改進，並提出了一種大尺寸高氣密光學窗口的焊接方法等關鍵技術。 -
The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing, at reasonable cost, large diameter semi - insulating gaas has a use in the production of gaas integrated circuits, and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal
目前，液封直拉技術生長gaas單晶獲得了廣泛關注，因為它能夠以合理的成本生產大直徑的半絕緣單晶。半絕緣材料是生產集成電路等微電子器件的良好材料，而這種應用就要求整個晶片具有很高的均勻性。 -
So in one hand it requires the wafer ' s diameter to be more large in order to enhance the productivity, and on the other hand it puts forward more strict requirement about the crystal perfection and electricity character. especially the electronic character and the equality of micro - area in the crystal wafer has become the key factor to determine whether the device can be made on it or not. so the resistivity measurement of micro - area become one most important procedure in the chip machining. to ensure the produce quality of chip and the perfect performance of final production, the four - probe testing technology need to be deeply studied
圖形日益微細化，電路尺寸不斷縮小，目前ic製造以8英寸、 0 . 13 m為主，預計在2007年左右將以12英寸、 65nm為主，這一方面要求圓片直徑不斷增大以提高生產率，另一方面對晶體的完美性、機械及電特性也提出了更為嚴格的要求。特別是微區的電學特性及其均勻性已經成為決定將來器件性能優劣的關鍵因素。因此，微區電阻率的測試成為晶元加工之中的重要工序。 -
By using a wafer - rotating grinding machine, the influence of the main process factors including grit size of diamond grinding wheel, rotating speed of the wafer chuck table, rotating speed and the down feed rate of the cup grinding wheel on the material removal rate, spindle motor current and wafer surface roughness in grinding large size wafer are experimentally investigated
摘要利用基於自旋轉磨削原理的矽片超精密磨床，通過試驗研究了砂輪粒度、砂輪轉速、工件轉速及砂輪進給速度等主要因素對材料去除率、砂輪主軸電機電流以及磨削后矽片表面粗糙度的影響關系。 -
There exist large stress, intensive scratch, damage and pollution of ion in wafer process, so it is necessary to improve mechanism of slicing and lapping by changing single mechanical function to equilibrium chemical and mechanical function for small damage and low stress. reducing damage and stress and enhancing quality and efficiency of product result in a base of followed process so as to improve wafer process and enhance finished product ratio of whole wafer process
目前加工過程中存在應力過大，造成表面劃傷嚴重，容易產生破損，離子沾污的問題，因而必須改善切削、研磨機理，把單一的機械作用變為均勻穩定的化學機械作用，以達到淺損傷、低應力的目的，有效的減少破損層和應力的累積，提高產品質量和加工的效率。 -
Plasma immersion ion implantation ( phi ) seems to be an alternative approach to reduce the manufacture cost of soi wafers due to its large ion current and independence of implantation time to the wafer size
等離子體離子注入（ p ）技術由於其強束流和大面積注入方式而有希望在soi材料制備方面獲得突破。 -
With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。 -
Abstract : the progress of the aqueous solution cleaning technology for silicon wafer in very large scale integrated circuit fabrication is reviewed. the future of the aqueous solution cleaning technology is discussed as well
文摘:本文綜述了超大規模集成電路製造過程中矽片溶液清洗技術的研究歷史及現狀，並對技術的未來發展進行了展望。
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