laser threshold power density 中文意思是什麼
laser threshold power density
解釋
激光閾值功率密度-
The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser
大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。 -
The analyses given in this paper to quasi - three - level for 946 nm laser are complete. the relation between 946 nm laser transmission and optimal crystal length has been derived from the rate equations describing the population inversion and the photon density in the laser cavity in the steady - state case. the minimal claims to coating have been given on the base of contrasting 946 nm transmission with 1064 nm transmission in the condition of different cavity losses and how the pump beam radius in the laser crystal and optimal crystal length affect the laser threshold and output power of 946 nm laser has been given as well
對產生946nm譜線的準三能級結構給出了較為完整的分析，利用激光諧振腔處于穩態時的速率方程，導出了準三能級nd ： yag946nm起振時，透射損耗與最佳激光晶體長度的關系，在與1064nm透射損耗相比較的基礎上，給出了不同的腔損耗情況下的最低鍍膜要求，並且給出了激光閾值、輸出功率和最佳激光晶體長度及泵光光斑大小的關系，這為設計室溫下高效運轉的946nm激光器的提供了理論基礎，這種分析方法對研究此類低增益，準三能級或三能級激光系統輸出特性有借鑒意義。 -
In detail, the major work that have been done are as follows : l. irradiated by the 1. 06 m 1. 319 m 3. 8 m laser respectively, when the incident laser power density is between the saturation threshold and the damage threshold, the vibrating phenomenon and the zero - output phenomenon can be seen in the pv - type detectors " response curve
論文的主要工作有： 1分別用波長為1 . 06 m 、 1 . 319 m 、 3 . 8 m的激光輻照光伏型（ pv ） hgcdte探測器，實驗發現，當輻照激光的功率密度大於其飽和閾值而小於其破壞閾值時，探測器的輸出存在「振蕩現象」和「零壓輸出現象」 。 -
Based on the above, we have made a research on the fabrication technology of two - dimensionally ( 2d ) arrayed surface - emiting lasers, and have obtained two - dimensionally arrayed laser primarily with lower threshold current density and higher power output, which will promote the achievement of higher reliability, lower threshold current arrayed surface - emiting lasers laser for high power output
在此基礎上進行了面發射半導體激光器二維（ 2d ）列陣的制備研究，初步獲得了具有較低閾值電流密度和較高功率的45偏轉鏡面發射陣列半導體激光器，為研製高可靠性、高功率、低閾值電流的面發射陣列半導體激光器奠定了一定的基礎。
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