lithography 中文意思是什麼

lithography 解釋
n. 名詞 石印〈平版印刷〉術；平版印刷品。

  1. The stamps are designed by ms. sofia martins and printed in lithography by southern colour print, new zealand

    郵票由sofiamartins女士設計，並由紐西蘭southerncolourprint以平版印刷技術印製。
  2. Mr alec cao, a mainland designer, designs the stamps. this issue was printed in lithography by southern colour print in new zealand

    這套郵票是由內地設計師曹國偉設計，並由紐西蘭的southerncolorprint用平版印刷。
  3. The stamp sheetlet is designed by mr. arde lam and printed in stochastic lithography ( with one colour printing on the gum ) by joh. enschede security printers, the netherlands

    小型張由林炳培設計，並由荷蘭joh . enschedesecurityprinters以平版調頻網印刷，背膠上帶有單色印刷。
  4. With the third harmonic 355nm nd : yag laser as the exposal source, the lithography of su - 8 photoresist is studied

    本文採用波長為355nm的三倍頻nd : yag激光作為曝光光源，對su - 8光刻膠進行光刻研究。
  5. The laser - liga technology provided by this research is the first technology to use ultraviolet laser as the exposal source for su - 8 photoresist lithography. it is a technology with lower cost and big potential to increase the aspect ratio as well as wider application

    本文首次提出採用紫外激光作為曝光光源的laser - liga技術，對su - 8膠進行曝光光刻不僅成本低、易推廣，而且具有大幅度提高光刻深寬比的潛力。
  6. Electron-beam lithography with a novel multilevel resist structure defines the pattern.

    採用新型的多層抗蝕劑結構的電子束光刻來形成圖形。
  7. The prospect for the maskless lithography technology

    無掩模光刻技術的前景
  8. The graphic arts include calligraphy and lithography

    平面造型藝術包括書法和平版印刷術。
  9. Factors of affecting patterning quality in holographic lithography

    影響全息光刻圖形質量的因素
  10. Lithography - the process used to transfer patterns onto wafers

    光刻-從掩膜到圓片轉移的過程。
  11. Vector scan electron beam lithography

    矢量掃描電子束光刻
  12. Euv extreme ultraviolet lithography

    極端紫外平版印刷
  13. Epl electron projection lithography

    電子發射平版印刷
  14. Wafer stepper lithography

    薄片的步進式光刻
  15. The stamps are designed by mr. michael fung and printed in lithography by joh

    郵票由馮剛華設計及荷蘭joh . enschedeb
  16. Therefore, the imaging characteristics of thick resist photolithograph are investigated in this paper based on the exposing and developing theories of thin film resists. firstly, the influences of nonlinearities in imaging process of thick resist lithography are studied

    本論文以抗蝕劑的曝光顯影理論為基礎，深入開展了厚層抗蝕劑的成像特性的研究，可為厚膠光刻實驗提供指導依據。
  17. As the ic manufacturing process develops from sub - micron to very deep submicron ( vdsm ) technologies, with current lithography tools ( 248nm and 193nm ), foundries can not manufacture products that designs want because of so - called optical proximity effect ( ope )

    當集成電路生產工藝發展到納米級時，利用現有的曝光設備（ 248nm和193nm ） ，由於所謂的光學鄰近效應，集成電路製造廠商已經無法製造出滿足電路功能要求的產品。
  18. Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions

    文摘:在電子散射能量沉積為雙高斯分佈的前提下，提出了一種提取電子束光刻中電子散射參數，和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值，在實驗數據處理中使用歸一化方法.此外，用此方法提取的電子散射參數被成功地用於相同實驗條件下的電子束臨近效應校正
  19. Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing

    建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型，有助於開發由成品率驅動的版圖設計工具，自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。
  20. Lead as activator in the fluorescent powder ( 1 % lead by weight or less ) of discharge lamps when used as sun tanning lamps containing phosphors such as bsp ( basi2o5 : pb ) as well as when used as specialty lamps for diazo - printing reprography, lithography, insect traps, photochemical and curing processes containing phosphors such as sms ( sr, ba ) 2mgsi2o7 : pb )

    第18點：仿日曬含磷（例如： bsp ）放電燈中螢光粉的鉛活化劑（鉛含量1 %以下） ，以及二氮化合物印刷、平版印刷復印、捕蟲器，光化學及硬化製程使用的含磷（例如： sms ）放電燈中螢光粉的鉛活化劑。
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