low esr 中文意思是什麼
low esr
解釋
各類高頻、低阻-
A patented method for internal contacting enables the realization of a very low esr and the most marginal residual inductivity
專利的內部接續作法，使得實現一個非常低的esr和最邊際的殘餘感抗為可能 -
Very low esr very low inductance
-非常低的esr和感抗 -
High ripple current, low level of esr and impedance, high voltage current, tol
高漣波電流，低esr與阻抗，高電壓電流， -
Regulator ground current increases only slightly in dropout, further prolonging the battery life. the rt9016 also works with low - esr ceramic capacitors, reducing the amount of board space necessary for power applications, critical in hand - held wireless devices. the rt9016 consumes less than 0. 01a in shutdown mode and has fast turn - on time less than 50s
晶片提供最完整的tcp ip硬體協定功能包括tcp udp ip icmp igmp arp rarp等協定，讓客戶端于開發ethernet連接需求的應用產品時，提供一簡單快速功能完整，又具價格競爭力之soc單晶片方案。 -
In the range of 299 - 355k, esr response is reduced due to low sensitivity with increase of measuring temperature
在299 355k測量溫度范圍內， esr響應值隨溫度的升高而降低。 -
Ideally suited for use in industrial and commercial applications such as switch mode power supplies and energy storage circuits small size, long life, very high voltage current, low esr and impedance, main power supply design and applications, tol
理想的適用於工商業界應用，如交換式主電源供應與儲能電路，小尺寸，長壽命，非常高的電壓電流，低esr及阻抗的應用 -
Firstly, the paper studied the dual effects of v2o5 in zno - v2o5 varistor ceramics during low temperature sintering. the binary varistor ceramic samples of v2o5 filled with zno at 2. 5 10 - 3mol were prepared, the valence of v ion was studied by esr ( electron spin resonance )
本文首先研究了v2o5在zno ? v2o5壓敏陶瓷低溫燒結中的雙重作用，制備了v2o5含量為2 . 5 10 - 3mol的單組元zno壓敏陶瓷，採用電子自旋共振譜（ esr ）研究了v2o5中v離子的價態變化。 -
In addition, the carbon nanotube array electrode, was found to have low esr and good cycling stability. to select a proper conducting polymer to form the composite electrode with mwnt arrays, poly ( 3 - methylthiophene ), polyaniline and polypyrrole coated on a pt electrode were investigated respectively for their potential application in supercapacitors
為了選擇一種能與mwnts組成復合電極以應用於超級電容器的導電高分子，我們研究了沉積于pt電極上的聚3 -甲基噻吩、聚苯胺和聚吡咯的電容性能。 -
The results show that v5 + whose valence changes is an acceptor impurity and after heat treatment especially at 655. the phenomenon is consistent with the result of the dta ( differential thermal analysis ). the result of dta indicates that v2o5 has a phase transformation absorption peak at 655 while the signal of esr of low valence of v ion is the strongest
結果表明v離子是一種受主雜質，熱處理后，其價態產生了變化，尤其是在655熱處理時價態變化程度最明顯，與v2o5的差熱分析（ dta ）結果相吻合，差熱分析也顯示， v2o5在655存在一相變吸熱峰，此時樣品的低價態v離子的esr信號最強。 -
The results of v - i nonlinear testing indicated that the macroscopical nonlinear coefficient improves as long as the esr signal of low valence v ion becomes strong
V ? i非線性測試結果也顯示，低價態v離esr信號越強，宏觀非線性系數越大。
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