low silicon 中文意思是什麼

low silicon 解釋
低硅的
  • low : adj 1 低的;淺的,矮的。 low flight 低飛。 a low temperature 低溫。 low tide [water] 低潮。 The g...
  • silicon : n. = silicium
  1. Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma

    等離子體對硅表面的低溫大面積氮化
  2. The qitaihe coal resources isadvantageous, the coal field total area 8, 000 square kilometers, haveverified the geological reserve 1. 7 billion tons, the prospectivereserves 4. 2 billion tons, the coal plant completely, has the cokingcoal, 1 / 3 coking coal, the gas coal, the anthracite and so on 10varieties, by coking coal primarily ; excellent in quality, has theespecially low phosphorus, especially low characteristic and so onsulfur, high heat value, high ash melting point, high silicon content, most is suitable for the coal chemical industry product thedevelopment, is national one of three big protections mining rare coalfields, is the heilongjiang province most important anthraciteproduction base, also is the national important coking coal and thenortheast area biggest high quality coke production base

    七臺河煤炭資源得天獨厚,煤田總面積8000平方公里,已探明地質儲量17億噸,遠景儲量42億噸,煤種齊全,有主焦煤、 1 / 3焦煤、氣煤、無煙煤等10個品種,以主焦煤為主;品質優良,具有特低磷、特低硫、高發熱值、高灰熔點、高硅含量等特點,最適于煤化工產品的開發,是全國三大保護性開采稀有煤田之一,是黑龍江省最重要的無煙煤生產基地,也是國家重要的主焦煤和東北地區最大的優質焦炭生產基地。
  3. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  4. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  5. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  6. Its current products include : top oscillation electrical precipitator, side electrical oscillation precipitator, magnetism controlled static electricity precipitator, wet electrical precipitator, honeycomb electric catching tar instrument, high - pressur silicon rectifier equipment and plc low - pressure controlling system, blast furnace gas impulse precipitator, high concentration pulverized coal collector, coke oven and boiler flue gas low pressure impulse precipitator, blower fan inhaler, crossing piping gas cooler, high temperature fume cooler, gyre - orientation impulse hop - pocker and all sorts of molded sections

    目前主要產品有:頂部振打臥式電除塵器、側部振打電除塵器、磁控靜電除塵器、濕式電除塵器、蜂窩電捕焦油器、高壓硅整流裝置及plc低壓控制系統、高爐煤氣脈沖除塵器、高濃度煤粉收集器、焦爐及鍋爐煙氣用低壓脈沖除塵器、風機空氣過濾器、橫管式煤氣冷卻器、高溫煙氣冷卻器、回轉定位脈沖大布袋及加工各種冷彎型鋼。
  7. Fabrication of hydrogenated microcrystalline silicon thin films at low temperature by vhf - pecvd

    法氫化微晶硅薄膜的低溫制備
  8. The advantage of using silicon low carbon steel

    硅含量對電器用的低碳鋼片的最大好處
  9. Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method

    半導體工藝材料的試驗.硅單晶中載流子壽命的測量.用
  10. The silicon force sensor using bulk silicon process has lots of advantages such as batch producible, low cost, high precision, small driving force, high reliability, low power consuming, small dimension, light weight and quick response, etc. therefore, a scheme is proposed in this paper

    由於微機械工藝採用的技術多是半導體工業的硅表面工藝和體硅加工工藝,因此這種傳感器可以大批量製造,且具有低成本、高精度、低驅動、高可靠性、低功耗、佔用空間小、重量輕和響應速度快等優點。
  11. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多,其中溶膠?凝膠( sol - gel )方法可以和集成電路( ic )光刻工藝相互兼容,處理溫度低,有大面積塗敷性能,能精確地控制組分,無需復雜的真空設備,成本低廉,所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜( ito )襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射, sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度,結構和電學性能進行了測試。
  12. Standard test methods for chemical analysis of carbon steel, low - alloy steel, silicon electrical steel, ingot iron, and wrought iron

    碳素鋼低合金鋼硅電工鋼鐵鑄錠和熟鐵化學分析的標準試驗方法
  13. According to above - mentioned way, this research is on the foundation of jichun - chen teacher research. focal points have studied stock coordination, additive, steam to press maintenance method for the influence of performance of low - silicon tailings aerocrete

    本研究在陳吉春老師研究的基礎上,根據上述思路,重點研究了物料配合比、外加劑、蒸壓養護方法對低硅尾礦加氣混凝土製品性能的影響。
  14. Analysis for the product hydration process of natural maintenance show tailings and quartz sand surface is advantage for the major influence of hydration outcome in jing pei generate " base role ", do not participate in chemical reaction basically, while steam temperature and pressure for hydration structure and form of low silicon - tailings aerocrete have obvious influence, it is why the compressive strength of two products have obvious difference

    對自然養護的製品水化過程分析的研究表明,尾礦和石英砂表面對於水化產物的主要影響是利於晶胚生成的「基底作用」 ,基本不參與化學反應,而蒸壓溫度和壓力對低硅尾礦加氣混凝土水化產物的結構、形態有著明顯的影響,導致兩種製品的抗壓強度有明顯差別。
  15. However, both of them have disadvantages. mo tip feas is fabricated by evaporating tip cathodes on base, so it has bad coherence with the base. on the other hand, the characteristics of silicon result in the bad heat stability, bad emission reliability, and low current density

    然而,這兩種陰極存在各自的缺點,如鉬尖錐是蒸鍍在基底上的,所以與基底的附著力不強;而硅的特性又決定了其熱穩定性差,發射的可靠性低,發射電流有限。
  16. Abstract : it analyses reduction machanism of silicon in femn blast furnace , basic conditions, ways and technological measures to smelt low silicon blast furnace femn, points out the technical and economical advantages of smelting low silicon femn in blast furnace

    文摘:分析了錳鐵高爐內硅還原機理、冶煉低硅高爐錳鐵的基本條件、途徑和工藝措施,指出了高爐冶煉低硅錳鐵的技術經濟優勢。
  17. Study and practice of improving the metallurgical property of low silicon sinter

    改善低硅燒結礦冶金性能的研究及實踐
  18. The object of this program research is to low silicon tailings product, and the research field of new housing materials is new comparatively

    本課題研究的對象是低硅尾礦製作新型建築材料,研究的領域較新。
  19. Analysis of water used in boiler and cooling system - determination of total silicon - photometric method by conversion with hydrofluoric acid for low silicon

    鍋爐用水和冷卻水分析方法全硅的測定低含量硅氫氟酸轉化法
  20. The high - value and recycle use of low - silicon tailings will eventually realized, therefore decrease for the damage of environment

    最終可以實現低硅鐵尾礦的高附加值利用和循環利用,減少對環境的破壞。
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