low-power transistor 中文意思是什麼

low-power transistor 解釋
小功率晶體管
  • low : adj 1 低的；淺的，矮的。 low flight 低飛。 a low temperature 低溫。 low tide [water] 低潮。 The g...
  • power : n 1 力，力量；能力；體力，精力；（生理）機能；〈常 pl 〉才能。2 勢力，權力，權限；威力；政權；權...
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  2. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  3. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  4. The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span

    鎮流器核心元件採用irf840場效應三極體，磁環及高頻扼流圈採用負溫系數，這樣的元件選擇使整流器適用電壓范圍寬160v - 250v ，功耗低，溫升小，性能十分穩定，確保其擁有很長的壽命。
  5. Based on many other circuit formats, a new kind of logic - level circuit representation, called unified middle - level circuit format ( umcf ), is defined in this paper, in which some special operations on circuit related with power estimation and low power design. umcf can not only interchange circuits of different formats, but also convert circuits to hspice acceptable files, which can be used for transistor level power estimation

    本文結合多種不同的電路格式，自主定義了一種邏輯級電路的中間表示形式（稱為umcf ）和一系列極具特色的與低功耗技術相關的操作，它不但可以實現與其他多種電路格式之間的相互轉換，還可以將電路直接轉換成hspice可以接受的文件，進行晶體管級的電路功耗估計，這樣可以在公認的高精度的功耗模擬器上，對本文的結果進行有效的驗證。
  6. The two - transistor forward converter has many advantages, especially its low voltage stress, each power switches need to block only input voltage, so it is widely used in high voltage input application

    雙管正激變換器有很多優點，特別是在電壓應力方面，變換器中的兩個開關器件只需承受輸入電壓，因而在高壓輸入的場合得到了廣泛的應用。
  7. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  8. To compare with transistor ( complete solid - state ) high - frequency linear power amplifier, there are some disadvantages : bad stability and reliability, low efficiency, high cost for operating, huge cabinet, heavy maintenance work load, low security for high - voltage electricity offering, and to ensure the continuance of tv program, the transmitter must be operating with main frame and spare frame

    它們與晶體管（全固態）高頻線性功率放大器相比，存在著穩定性及可靠性差、效率低、運行費用高、發射機體積大、日常維護工作量大、高壓供電不安全、必須採用主機和備機的運行方式來確保電視節目不停播等缺點。
  9. Semiconductor discrete devices. detail specification for type 3dg216 npn silicon low - power difference matched - pair transistor

    半導體分立器件. 3dg216型npn硅小功率差分對晶體管詳細規范
  10. Semiconductor discrete device. detail specification for type 3dk100 npn silicon low - power switching transistor

    半導體分立器件. 3dk100型npn硅小功率開關晶體管詳細規范
  11. Semiconductor discrete device. detail specification for type 3dk106 npn silicon low - power switching transistor

    半導體分立器件. 3dk106型npn硅小功率開關晶體管詳細規范
  12. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中，採用了smart功率集成技術實現電路的大功率，基區是外延層的縱向pnp晶體管作為輸出，將集電極置於晶元背面，採用低電阻率p ~ +襯底作為歐姆接觸。
  13. Semiconductor discrete devices. detail specification for type 3dg135 silicon ultra high frequency low - power transistor

    半導體分立器件. 3dg135型硅超高頻小功率晶體管詳細規范
  14. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg120

    半導體分立器件. 3dg120型npn硅高頻小功率晶體管.詳細規范
  15. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg111

    半導體分立器件. 3dg111型npn硅高頻小功率晶體管.詳細規范
  16. Semiconductor discrete devices. detail specification for type 3dg144 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg144型npn硅高頻低噪聲小功率晶體管詳細規范
  17. Semiconductor discrete devices. detail specification for type 3dg143 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg143型npn硅高頻低噪聲小功率晶體管詳細規范
  18. Semiconductor discrete devices. detail specification for type 3dg142 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg142型npn硅高頻低噪聲小功率晶體管詳細規范
  19. Transistor hi - fi power amplifier, the output impedance is low, can actuate the speaker well

    高速晶體管hi - fi功率放大器，輸出阻抗低，能更好地驅動揚聲器。
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