low-temperature oxidation 中文意思是什麼

low-temperature oxidation 解釋
低溫氧化
  • low : adj 1 低的；淺的，矮的。 low flight 低飛。 a low temperature 低溫。 low tide [water] 低潮。 The g...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • oxidation : n. 【化學】氧化（作用），正化。
  1. If use jinke taed as activators, the application scope of sodium perborate will be widen by improving oxidation even at low temperature

    如果相應地應用金科taed作活化劑，則更能在低溫下發揮氧化作用，大大提高了過硼酸鈉的應范圍。
  2. Zro2 fibrous cloths are characterized by their high melting point ( 2600 ), high - temperature resistance ( 2200 ), oxidation - corrosion resistance, quick absorbing alkaline, high alkaline absorption, and low heat - conductivity and resistivity, etc. zroi fibrous cloths that can be used as the nickel - hydrogen battery separators were first developed by using precursor process at home

    氧化鋯纖維布具有熔點高（ 2600 ） 、耐高溫（ 2200 ） 、抗氧化、耐腐蝕、熱傳導率低、吸堿速度快、吸堿率高、面電阻小等特點。
  3. The amorphous surface layer of tantalum was obtained by anodic oxidation in melting nitrate after plasma - nitriding at relative low temperature, and the composition, phase structure and property of coating were tested

    摘要採用低溫離子滲氮后再熔鹽陽極化的方法，在鉭表面形成厚度達微米數量級的非晶態層，測試了非晶層的成分、相結構和性能。
  4. Highly oxidation resistance and shear stable formulation, to release and remove the deposits of piston skirt and cylinder. restrain the oil mud in high or low temperature to keep the engine highest clean

    具有優良的清凈分散性，有效減緩及清除汽缸壁及活塞上的沉積物，抑制高低溫油泥的生成，保持發動機高度清潔。
  5. Problems about fabrication of sige - oi substrate, low - temperature gate oxidation and source / drain ion implantation are discussed after considering technology level and reported articles

    然後用二維模擬軟體medici模擬，得到器件的閾值電壓約為- 0 . 1v ，泄漏電流很小。
  6. Pilot study on removal of nitrogen and phosphorus from low - temperature municipal wastewater by combined cept and moving bed biofilm oxidation process

    移動床工藝處理低溫城鎮污水脫氮除磷中試
  7. Study on low - temperature oxidation of coal with a comparative - oxidation method

    參比氧化法研究煤低溫氧化特性
  8. 4. investigation are made into preparations of thin gate - oxides for strained si channel mosfet ’ s using pecvd at 300 and low - temperature ( 700 ? 800 ) thermal oxidation, respectively

    4 .分別對300 c下採用等離子體增強化學氣相淀積（ pecvd ）和700 ~ 800 c下採用熱氧化技術制備sigehmos器件柵介質薄膜進行了研究。
  9. Solid state nmr study on low - temperature oxidation process of daming coal

    大明煤低溫氧化過程的固體核磁共振研究
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