lpcvd 中文意思是什麼
lpcvd
解釋
低壓化學氣相沉積-
The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth
用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。 -
A design of using lpcvd silicon - rich silicon nitride of low residual stress as the resonant beam is proposed based on technology of sacrificial porous silicon and a new type peninsula structure is also proposed for high pressure sensitivity
提出了基於多孔硅犧牲層技術的利用lpcvd生長的低應力厚的富硅氮化硅作為諧振梁的壓力傳感器結構設計。為了提高靈敏度，還提出了一種半島結構。 -
The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber, and guarantee the carry out of the reaction. the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber, it is the container which carry out the pcr reaction, and dna sample carry out amplification reaction here. the third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction
首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部製作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。 -
3. the gap defects in multilayer cvd sic coatings could be effectively controlled by means of slow deposition in low - pressure chemical vapor deposition ( lpcvd ). 2d c / sic composites with a multi - layer cvd sic coating prepared by slow lpcvd showed weight gain at 1300 @ in air condition
（ 3 ）採用慢速減壓化學氣相沉積工藝實現了對多層cvdsic塗層面缺陷的有效控制，實現了單一cvdsic塗層保護2dc sic在高溫下（ 1300 ）的氧化增重。 -
Secondly, a novel technology is proposed which includes several key steps such as lpcvd ( low pressure chemical vapor deposition ) nitride silicon and cmp ( chemical mechanical polishing )
其次，設計包含低壓淀積氮化硅和化學機械拋光（ cmp ）等關鍵步驟的新的soi介質隔離工藝流程。
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