magnetoresistance effect 中文意思是什麼

magnetoresistance effect 解釋
磁阻效應
  • magnetoresistance : n. 【物理學】磁致電阻。adj. -sistive
  • effect : n 1 結果。2 效能，效果，效力，效應，作用，功效；影響。3 感觸，印象；外觀，現象。4 旨趣，意義。5 ...
  • e : （pl E s e s ）1 英文字母表第五字母。2 【音樂】E調，E音。3 E字形。4 〈美國〉（順序）第五等，（成...
  1. Giant magnetoresistance effect of granular films

    顆粒膜的巨磁電阻效應
  2. The effect of ion implantation on the giant magnetoresistance of granular film

    離子束改性對顆粒膜巨磁電阻效應的影響
  3. Magnetic properties of feco - sio2 granular film and its tunneling magnetoresistance effect

    2顆粒膜的磁性和隧道磁電阻效應研究
  4. The discovery of the colossal magnetoresistance ( cmr ) in hole - doped perovskite manganites ra1 - xmxmno3 ( ra is a trivalent rare - earth ion and m is a metal ion ) has attracted much attention since 1989 due to not only its technological applications in magnetic recording and sensor, but also the effect of the strong correlation concerning metal - insulator transition in the field of basic research. since then, several physics models have been suggested to explain the mechanism of cmr. however, the exact mechanism of cmr remains to be done

    自1989年在摻雜鈣鈦礦型錳氧化物ra _ （ 1 - x ） m _ xmno _ 3 （其中m為金屬離子， ra為三價稀土離子）中發現龐磁電阻（ cmr ）以來由於其在磁記錄、磁傳感器等方面潛在的應用前景，以及金屬?絕緣體相變等所涉及的強關聯效應，使該類化合物吸引了物理學界的廣泛注意。
  5. Since the discovery of colossal magnetoresistance effect ( cmr ) in per - ovskite manganites, it has sparked considerable renewed interests in these long - known materials with an eye towards both an understanding of the cmr and related properties and potential applications in magnetic information store and low - field magnetic sensors

    以鈣鈦礦結構氧化物為代表的巨磁電阻材料，由於它們所表現出來的超大磁電阻效應（ colossalmagnetoresistance ）在提高磁存儲密度及磁敏感探測元件上具有十分廣闊的應用前景，因而受到人們的廣泛關注。
  6. The drives rely on a spintronic effect, giant magnetoresistance ( gmr ), to read such dense data

    這種硬碟是利用一種巨磁阻的自旋電子效應來讀取這些高密度的資料。
  7. The mram needs to be of a large magnetoresistance ( mr ) effect at room temperature and lower magnetic field, in order to demands of practical application. however, the large tunneling mr effect is strongly dependent upon electrode material, which is of high spin polarization

    採用高自旋極化率（ p ）的材料是產生大的隧穿磁電阻（ tmr ）效應的關鍵之一，而半金屬（ half - metal ）鐵磁材料的自旋極化率p理論上可達100 。
  8. The discovery of giant magnetoresistance effect has attracted much attention to research of magnetic transport in inhomogeneous systems, which depends on spin of electrons. the magnetoresistance in such two inhomogeneous systems as magnetic granular alloys and doped pervoskite manganite fflms is usually considered due to spindependent scattering

    巨磁阻效應的發現，導致了一個如何正確看待非均勻系統中磁輸運性質的問題，並使電子輸運狀況依賴于自旋內稟屬性的物理觀念逐漸形成。
  9. Magnetoresistance effect of double - barrier magnetic tunneling junction applied in spin transistors

    雙勢壘磁性隧道結的磁電阻效應及其在自旋晶體管中的應用
  10. The thesis was originally intended to reveal magnetoresistance effect in two kinds of novel composites : ( 1 ) acicular cro2 / spherical insulating granular composite ; ( 2 ) cro2 granules coated with insulating polymer, respectively

    本論文的目的是研究兩類復合材料：針形cro _ 2和球形絕緣顆粒復合型；聚合物包裹cro _ 2顆粒型。
  11. On one hand, in grain regions of films, the strong inter - duster interaction, mentioned as mean field, leads to the colossal magnetoresistance effect ( cmr )

    與此同時，薄膜的拓撲形態分為顆粒區域和顆粒邊界區域。在顆粒區域內，小聚集體之間具有強關聯耦合作用，是這種非均勻體系龐磁阻效應的成因。
  12. The tunneling magnetoresistance effect and microstructure of fe25ni75 sio2 discontinuous multilayer films

    2多層膜的微結構和隧道磁電阻效應
  13. 4. using our measurement system, the magnetoresistance effect of the polycrystalline film is measured

    4 .以本測試系統測試所制備的fe _ 3o _ 4薄膜的磁電阻效應。
  14. In this paper, magnetomechanic effect, magneto - caloric effect, magnetoresistance effect and magnetic - optical effect of magnetic material and its application are discussed by thermodynamic functions

    摘要本文通過熱力學函數半定量地討論了磁性材料的磁力效應、磁熱效應，並定性地介紹了磁電阻效應和磁光效應及其應用。
  15. Otherwise, using the ta buffer layer can effectively reduce the surface roughness. in addition, measured by our measurement system, the polycrystalline the film has similar negative magnetoresistance effect to single - crystalline film, so it is potential to be applied in spintronic devices

    通過磁電子輸運測試系統研究制備的薄膜還發現多晶fe _ 3o _ 4具有同單晶fe _ 3o _ 4類似的負磁電阻特性，因此有望將多晶fe _ 3o _ 4薄膜應用到自旋電子器件中。
  16. The percentage increase in resistance, called the magnetoresistance ( mr ), was so big and so unusual that my team immediately redirected its efforts to explain the fundamental physics of this new effect

    磁阻（電阻增加的百分比）的值相當大而且不尋常，使我的小組立刻改變研究方向，轉而想要解釋這個新效應的基礎物理。
  17. As one of magnetism properties in the magnetism materials, magnetoresistance ( mr ) effect shows the magnitude about resistivity dependence of the magnetic field. the time when people focus on magnetoresistance effect is the last ten years. after mr effect was discovered from the multilayered films fe / co by baibich et al in 1988, helmolt et al got the same result from la _ ( 2 3 ) ba _ ( 1 3 ) mno _ x films

    人們對磁電阻效應的研究主要在於最近的十年間，繼1988年baibich等人在磁性多層膜fe co中發現了磁電阻效應后， 1993年helmolt等人在la _ （ 2 3 ） ba _ （ 1 3 ） mno _ x等鑭錳氧化物薄膜材料中也發現了磁電阻效應。
  18. In this thesis, we give a systematic discussion on the discovery and the process of the study of magnetoresistance effect, how to get the materials which can make mr effect. from the experimental study point of view, we devise a scaling system for high ( low ) - temperature resistance and magnetoresistance, by using the system, the resistance and magnetoresistance properties of the materials is investigated. we propose a model to analysis the mechanism of mr effect by using a monte carlo technique we present the results of our monte carlo calculation in the last part of the thesis to some extent, theoretical calculation is found to be agreement with experimental results

    在本文中，我們較為系統的闡述了磁電阻效應發現、發展過程；如何從實驗上制備出具有磁電阻效應的磁性材料；從實驗研究角度考慮，設計了一套高、低溫電阻、磁電阻測量系統；並利用該系統測量了實驗上制備得到的磁電阻材料的電阻、磁電阻特性，對所得到的數據進行了分析、處理；提出一個物理模型，利用montecarlo模擬方法對磁電阻效應產生的機理作了初步的分析。
  19. A brief overview of magnetoresistance effect this chaper aims at a brief overview of the history, progress and current status of all kinds of magnetoresistance materials, such as omr, amr, gmr and cmr and so on. by these illustration, we may acquire a basic sight on magnetoresistance effect as well as magnetoelectronics

    包括正常磁電阻效應（ omr ） 、各向異性磁電阻效應（ amr ） 、巨磁電阻效應（ gmr ） 、特大磁電阻效應（ cmr ） ，通過本章的介紹，我們將對磁電阻效應以及磁電子學都有一個概括的了解。
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