maskless 中文意思是什麼
maskless
解釋
無屏蔽的-
The prospect for the maskless lithography technology
無掩模光刻技術的前景 -
The beam division method in maskless laser interference photolithography can be divided into wave - front division and amplitude division
摘要無掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。 -
The theoretical research, computer simulation and experimental results analysis show that maskless laser interferometric lithography and holographic lithography have the characteristics of large field of view, high resolution, distortionless, relatively simple system structure, low costs and convenient realization way. they have a broad application prospect
激光干涉光刻技術研究四川大學博士學位論文理論研究、計算模擬和實驗結果分析表明，無掩模激光干涉光刻和全息光刻具有大視場、高解析度、無畸變、系統相對簡單、成本較低，實現方便等特點，具有廣闊的應用前景。 -
An interferometric lithographic experimental system with maskless and multi - beam exposure is built. an experimental system with wavefront divided by a trapezoidal prism and with selectable diaphragms for kinds of multi - beam, multiple - exposure interferometric lithography research is proposed. the experimental study on interferometric lithography is carried out
建立了無掩模多光束多曝光干涉光刻實驗系統，提出了一種採用梯形棱鏡進行波前分割和利用可選擇光闌進行多種多光束多曝光干涉光刻研究的實驗系統，進行了干涉光刻實驗研究，對模擬和實驗結果進行了分析。 -
All this has laid a strong foundation for selecting a subject of maskless afm nanolithography, i. e., field - induced oxidation of si semiconductor. in chapter two, a high - intensity current between a probe tip and a sample is discussed first. electrical intensity between them is simulated using matlab software after an electrical model is introduced, thus theoretically analyzing the effect of tip radii, tip - sample separation, radii at the sample, and biases on the morphology of field - induced oxidation
第二章首先討論了掃描探針與樣品之間的高密度電流，得出了電流密度與偏置電壓和探針?樣品間距密切相關，其關系不能以簡單的線性或指數函數來表述的結論；然後引進了掃描探針場致加工的電場模型，利用matlab模擬探針與樣品之間的電場強度，分析了掃描探針加工條件包括探針針尖曲率半徑、探針-樣品間距、樣品平面半徑以及偏置電壓等對場致氧化物幾何形態的影響。 -
The methods and systems ( including amplitude division double - beam interference system, three - beam interference system, liquid immersion type deep uv interference system and full automatic interference photolithographic system ) for amplitude division maskless laser interference photolithography are studied and compared
研究和比較了振幅分割無掩模激光干涉光刻方法和系統，包括振幅分割雙光束干涉系統、三光束干涉系統、液浸式深紫外干涉系統及全自動干涉光刻系統。 -
Simulation and experiments show that for point array or hole array patterns with the same sizes maskless interference photolithography is much simple than the traditional photolithography
模擬和實驗結果表明，對點陣或孔陣圖形，在同樣的圖形尺度下，無掩模干涉光刻比傳統光刻簡單得多。 -
Complex 3 - dimension ( 3d ) microstructures can be constructed using this technique with the advantages of being maskless, single step, real 3d structure and high resolution
我們展示了一個有潛力應用於組織工程及生醫領域之新穎的微製造技術雙光子吸收光致聚合法，它所使用之基材為液態高分子材料。 -
The basic principle, theory, main types and realizing methods of maskless laser interferometric lithographic technology used for generation of high resolution, deep sub - micron and nanometer patterns in large field of view are deeply investigated
深入研究了無掩模激光干涉光刻技術用於高分辨、大視場、深亞微米和納米圖形生成的基本原理、理論、主要類型和實現方法。 -
Based on light interference, diffraction and optical holography theory, the paper comprehensively describes the basic principle, main types, development trend as well as the objective and significance for carrying out the research of laser maskless interferometric lithography and holographic lithography
本論文基於光的干涉和衍射及光學全息照相理論，綜合評述了光學光刻的基本原理、主要類型、發展趨勢及開展激光無掩模干涉光刻和全息光刻研究的目的和意義。
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