memory flash 中文意思是什麼
memory flash
解釋
內置記憶晶元-
Standard 2mb flash memory and 4mb dram memory
全金屬外殼，結構堅固 -
Up to 1mb flash memory and 2mb dram memory
能夠容納300米的色帶 -
Up to 512kb flash memory and 2mb dram memory
標簽紙及碳帶 -
Following the enhancement of process technology, the feature size of device becomes smaller, which make the density of flash memory and at the same time performance improved
隨著工藝水平的不斷提高，器件特徵尺寸不斷減小，從而使得flashmemory在容量不斷增大的同時性能也在不斷的改善。 -
Flash memory becomes an indispensable kind of products of semiconductor memories for its advantage of high speed. its usages in today ' s computer communication and consumer electronics are wide and more popular
如今flashmemory由於其自身的高速的優勢而使得它成為半導體存儲器中不可或缺的一類產品，它在計算機、通訊和消費類電子產品中的應用越來越廣泛，越來越普遍。 -
This article firstly describes the structure and operational principle of a flash memory and analyzes the commonly used structures of its peripheral circuits. . . sense amplifier. then emphasizes on illustrating the design of two novel structures of sense amplifier applied in a 3v full - cmos flash memory, and then simulate them using innosis 0. 15um process technology and obtain satisfying simulation results under different conditions
然後著重論述了兩種應用3v全cmosflashmemory中的全新結構靈敏放大器，並用innosis0 . 15 m工藝，對其進行模擬，得到了不同條件下的模擬結果，結果表明新設計的全新靈敏放大器具有電路結構簡單，讀取速度快等優點，完全能夠滿足flashmemory的要求，達到了預期的目標。 -
Furthermore, based on the proposed new charge pump circuit, a iv to 3. 3v high voltage generator which is used in analog switch circuit and a 3v to 10v high voltage generator which is applied to eeprom or flash memory are designed, the components and design thought of two high voltage generators are also discussed in detail. and the simulations of two high voltage generators are accomplished by tsmc 0. 18uw cmos technology ( t018u ), the outcome testifies that two high voltage generators that take the new charge pump as the core circuit have the higher performance
此外，基於新型的電荷泵電路，設計了用於模擬開關電路的1v到3 . 3v的高壓產生系統和用於flashmemory的3v到10v的高壓產生系統，詳細討論了兩種高壓產生系統的電路組成和設計考慮，並用臺積電0 . 18 mcmos工藝（ t018u ）對兩種高壓產生系統進行了hspice模擬，結果表明以新型電荷泵電路為核心的兩個高壓產生系統都具有較高的性能。 -
In the past few years, with the development of electronic technology and semiconductor storage device, solid state recorder ( ssr ) based on dram and flash memory has taken place the tape recorder, magnetic disk and magnetic - optic disk and been the dominating solution for the storage of mass data in the spacecraft
近年來，隨著電子技術的發展和半導體存儲器密度的不斷提高，以dram和flash為主的固態大容量存儲器逐漸取代了早期星上的磁記錄設備而成為空間飛行器數據記錄的主流方案。 -
1mb flash memory and 256 sram memory
1mb快閃記憶體和256 sram記憶體。 -
There are even memory sticks or flash drives secured with built - in thumbprint scanners
甚至已經出現了內置拇指指紋掃描裝置的記憶棒與閃存盤。 -
Charge pump circuits that make use of charge accumulation in the capacitor can pump charge upward to produce voltage higher than the regular supply voltage, and they are widely used in memory circuits, such as flash memory, for the programming and erasing of the floating - gate devices
電荷泵是一種運用電荷在電容中的積累來產生高壓（高於電源電壓）的電路，它廣泛應用在存儲器電路中，諸如flashmemory ，用於對懸浮柵器件進行寫或擦除操作。 -
The voice recording instrument adopts 8bit pcm and 4bit adpcm voice coding and decoding mode, can record the eight - channel voice signal simultaneously. it can save the recorded data in the flash memory or in the pc through the ethernet. the recorded voice signal data also can be played back
該語音記錄儀採用8位pcm或4位adpcm語音編解碼方式工作，可實現8路音頻輸入信號同時錄音;能夠將錄制的數字語音數據存儲在nand型flash中或通過以太網介面上傳到pc機存儲;能夠將錄制的數字語音數據進行回放。 -
The design includes managing software of dsp system ( including dsp initializing, dma reading of collected data ), isp programming of flash memory, boot loading of the fixing program, program of interfaces between dsp and pci, the design of pci card driving program, the skills of programming etc. the sixth chapter : this chapter draws a conclusion and also gives a prospect on the research work
介紹了dsp系統管理軟體（包括dsp初始化、採集數據的dma讀取） 、 flashmemory的isp編程、固化程序的引導、 dsp與pci介面程序、 pci卡驅動程序設計、以及編程技巧等內容。第六章總結了以上的工作，並對以後的研究任務進行了展望。 -
Mtd devices are those class of devices like flash chips, compact flash cards, memory sticks, and so on, which are increasingly finding their way into embedded devices
Mtd設備是象閃存晶元、小型閃存卡、記憶棒等之類的設備，它們在嵌入式設備中的使用正在不斷增長。 -
Display intelligently by building a character library in the flash memory of mcu
空間自建字庫實現智能顯示 -
The new plant will manufacture nand flash memory chips, which are widely used in a host of products including mp3 players, cellphones and digital cameras
新工廠將製造nand閃存晶元，其廣泛用於多種設備如mp3播放器、蜂窩式移動電話、數碼相機等。 -
It turns out that transistors in these flash - memory devices are prone to being gummed up with electrostatic charge that they cannot dissipate
結果發現，這些快速記憶裝置中的晶體管一旦被沖入了它們無法驅散的靜電電荷，它們就會出毛病。 -
The product has the following characters : all - purpose input, completed separated signal channels, collection of the signal data by scanning, the display technique of lcd big screen, flash memory ; capacious compatible floppy disk, 36 types of signals, multiple alarms, communication of rs232 / 485 and hart confered - link with a view to second generation technique of the field - bus. during the developing course, i used the method of reliability design to design hardware, and researched carefully the process of weak signal. pass to practice, the product has achieved all aim of the design
系統在功能上實現了萬能輸入，信號通道之間的完全隔離，信號的掃描採集，大屏幕lcd顯示技術， flash存儲器進行數據存儲，大容量的具有兼容性的電子軟盤， 36種信號方式，多種報警方式， rs232 / 485通訊，以及著眼于下一代的現場總線技術的hart協議介面等。 -
However, because of the low speed of program operation and the invalid blocks of flash memory, if we want to make it the storage medium of solid state recorder on the spacecraft, several problems need to be resolved : 1 ) how to improve the speed of program and erase operation of flash memory ; 2 ) how to map out and bypass the invalid blocks and effectively manage the mass memory space
但是由於flash的寫入（編程）速度慢、存在無效塊等問題，使要將其應用於星載大容量存儲器，亟待解決以下幾個問題： （ 1 ）如何有效地提高閃存的編程和擦除速度； （ 2 ）如何標識和旁路初始和使用過程中出現的無效塊，並有效地管理大容量數據存儲器。 -
A novel flash memory, which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming, and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation
本論文首次提出了一種採用源極誘導帶帶隧穿熱電子注入（ sourceinducedband - to - bandtunnelinghotelectroninjection ）進行編程操作的新型快閃存儲器技術和一種pmos選擇分裂位線nor （ pmosselecteddividedbit - linenor ）快閃存貯陣列結構。
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