metal impurities 中文意思是什麼

metal impurities 解釋
金屬雜質
  • metal : n 1 金屬；金屬製品；金屬合金。2 【化學】金屬元素；（opp alloy）；金屬性。3 【徽章】金色；銀色。4 ...
  • impurities : 懸浮固體物
  1. Purifying water : this machine can eliminate peculiar smell and many kinds of impurities such as bacterium, heavy metal ion, and etc

    凈化水質：可去除水中異味、細菌、重金屬離子、多種有機雜質等有害物質；還可使水脫色、增氧，使水質清澈透明。
  2. Before the pump installation, it is necessary to remove the impurities in the pipeline thoroughly like welding slag and metal scraps lest they are sucked into the pump causing accidents when the pump starts

    泵安裝前一定要徹底清除管路內的雜物，如：焊渣、金屬屑等，以免泵起動時被吸入造成事故。
  3. Are there bacteria, odor or impurities, trihalogenmethane, pesticides or heavy metal containing in the supplied water

    是水中有細菌雜質臭味，還是肉眼看不到的三鹵甲烷農藥等有機物或重金屬呢？
  4. The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations

    本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。
  5. Standard test method for determination of metallic impurities in uranium metal or compounds by dc - arc emission spectroscopy

    用直流電弧發射光譜分析法測定鈾金屬或化合物中金屬雜質的標準試驗方法
  6. The uv - vis transmission spectra and concentrations of metal ion impurities in different part of dkdp crystal was measured. the results show concentrations of metal ion impurities on the ( 100 ) face is higher than that on the ( 110 ) face and absorption on the ( 100 ) face is bigger than that on the ( 110 ) face

    通過測試點狀籽晶生長dkdp晶體不同部分雜質金屬離子的含量和紫外可見透過光譜，結果發現dkdp晶體柱面的雜質金屬離子含量比錐面高，柱面的紫外可見吸收比錐面大。
  7. The principle of hydrogen storage & purification devices is, utilizing the alternative hydrogen absorbing ability of hydrogen storage alloys inside the devices, hydrogen is absorbed from the impurity - included hydrogen gas and metal hydrides are formed, then the gaseous impurities concentrated in the reactor space of the devices are blown away by hydrogen gas, so the hydrogen gas inside the devices can be purified to the purity of 6n

    金屬氫化物氫儲存凈化器是利用儲氫合金的選擇性吸氫能力，吸收含氫氣體中的氫形成金屬氫化物，並用氫氣將濃縮于反應器空間的雜質氣體吹除，即可凈化含氫氣體中的氫，並達到6n的純度。
  8. Recently, a new gettering technique, which cavities formed by high - dose helium - implantation and subsequent annealing at lower temperature is efficiently at gettering metal impurities, has been concentrated

    近年來一種新的吸雜技術?氦微孔吸雜技術因其對金屬雜質顯著的吸除效果而備受關注。
  9. By analyzing the difference on ( loo ) and ( 110 ) face in the structure of dkdp crystal, the different of uv - vis transmission spectra and the different of concentrations of metal impurities in different part of dkdp crystal was explained

    通過分析dkdp晶體的原子結構以及柱面和錐面的原子結構差別，解釋了晶體柱面和錐面雜質金屬離子含量差別的原因以及其與紫外可見透過光譜的關系。
  10. Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device. one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation

    所以需要減小有源區中金屬雜質的濃度，通常採用吸除的方法把金屬雜質從器件有源區吸收到有源區之外預先形成的sink （陷阱）中。
  11. Metal impurities unintentionally introduced into si wafers during various device process steps are very harmful to device performances. many gettering techniques have been widely studied to overcome these problems by removing metal impurities from the active region of a device. reduction in device size and introduction of new moralization processes require more efficient gettering techniques working at lower temperatures

    半導體工藝中無意引入的金屬雜質的污染會極大損害器件性能，為了將金屬雜質從器件的有源區吸除，吸雜技術被廣泛的研究，器件尺寸的不斷縮小和新的金屬化工藝的不斷出現更需要能在低溫有效吸除的技術。
  12. Some previous experiments have showed that cavities had more efficient gettering than p - diffusion, mechanical damage and ion implantation. most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study. this technique especially applied to low - contamination process, how ever, has not been carefully studied, which should be important to the semiconductor manufacturing

    而過去的工作多集中在從基礎研究的角度研究氦微孔對有意摻入金屬雜質的矽片的吸除特性，對無意引入的低濃度金屬雜質的器件吸雜效果的研究卻非常少，這方面的研究是氦微孔技術走向實際應用的必經之路。
  13. The fabrication methods such as molecular - beam epitaxy and metal - organic chemical vapor deposition and experimental studies of their properties have been reported, and theoretical studies mainly concentrate on the impurity binding energy varying the size of the wire, the effect of the applied electric field or magnetic field, and photoionization of impurities

    在實驗上已經用分子束外延和金屬有機化學汽相淀積等技術對其物理性質進行了廣泛的研究，而理論上的研究主要集中於研究量子線的尺寸對雜質束縛能的影響、外加電場或磁場的作用及雜質的光致電離效應。
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