metal oxide semiconductor 中文意思是什麼

metal oxide semiconductor 解釋
金屬 氧化物 半導體
  • metal : n 1 金屬；金屬製品；金屬合金。2 【化學】金屬元素；（opp alloy）；金屬性。3 【徽章】金色；銀色。4 ...
  • oxide : n. 【化學】氧化物。 antimony oxide 銻白，氧化銻。 deuterium oxide 重水，氧化氘。 mercuric oxide 氧化汞。 nitric oxide 一氧化一氮。
  • semiconductor : n. 【物理學】半導體。
  1. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  2. Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.電力開關設備的金屬氧化物半導體場效應晶體管
  3. Mosfets discrete semiconductor devices - part 8 - 4 : metal - oxide - semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.第8 - 4部分:電力開關裝置用金屬氧化物半導體場效應晶體管
  4. Cmos, complementary metal - oxide - semiconductor

    相補性金屬酸化膜半導體
  5. Complementary symmetry metal oxide semiconductor

    互補對稱金屬氧化物半導體
  6. Test mehods for gas sensors of metal - oxide semiconductor

    金屬氧化物半導體氣敏元件.試驗方法
  7. Cmos - complementary metal oxide semiconductor

    補充金屬氧化物半導體
  8. Complementary metal oxide semiconductor random access memory

    互補金屬氧化物半導體隨機存儲器
  9. The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing, called complementary metal oxide semiconductor, or cmos

    聲音晶片的全部製程，是完全相容於互補式金屬氧化物半導體（ cmos ）的工業標準製程。
  10. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。
  11. Complementary metal oxide semiconductor cmos

    互補性氧化金屬半導體
  12. Measuring methods for gas sensors of metal - oxide semiconductor

    金屬氧化物半導體氣敏元件測試方法
  13. Generic specification for gas sensors of metal - oxide semiconductor

    金屬氧化物半導體氣敏元件總規范
  14. Memory, metal - oxide semiconductor

    金屬氧化物半導體記憶器
  15. Metal - oxide semiconductor memory

    金氧半導體記憶器
  16. Mos metal - oxide semiconductor

    金屬氧化物半導體
  17. The agreement includes complementary metal oxide semiconductor ( cmos ) and silicon - on - insulator ( soi ) technologies as well as advanced semiconductor research and design enablement transitioning at the 45 - nanometer generation

    該協議包括互補金屬氧化物半導體（ cmos ）以及絕緣矽片（ soi ）技術以及轉向45納米級別高端半導體的研究和設計。
  18. Transistor based technology, high power mosfet is used for the vibration element mosfet : metal - oxide semiconductor field effect transistor

    三，主要功能特點：全部採用晶體管，振蕩元件採用大功率mosfet場效應管。
  19. There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication

    目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。
  20. Well, cmos complementary metal - oxide semiconductor chips use metal - oxide semiconductor field effect transistors mosfets. these are fundamentally different from bipolar transistors

    哦， cmos （互補金屬氧化物半導體）晶元使用金屬氧化物半導體場效應晶體管（ mosfet ） ，顯然它是一種fei （場效應晶體管） 。
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