mos structure 中文意思是什麼

mos structure 解釋
mos結構
  • mos : 不需要現場收音的無聲取景
  • structure : n. 1. 構造，結構；組織；石理，石紋。2. 建造物。3. 【化學】化學結構。4. 【心理學】（直接經驗中顯現的）結構性，整體性；整體結構。adj. -d ,-less adj.
  1. Abstract : by theoretical analysis and experiment, it has been proved that injection photodetector is not a mos field effect structure

    文摘:通過理論分析和實驗證明了注入光敏器件並不是一種mos場效應結構，對文獻[ 9 ]中得出的不同的結論和所討論的問題闡述了自已的見解。
  2. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  3. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  4. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  5. Influence of irradiation on oxide film reliability in mos structure

    結構氧化硅薄膜可靠性的影響
  6. Study on the electric characteristics and radiation response of 6h - sic mos structure

    結構電特性及其輻照效應的研究
  7. The study shows that coulomb scattering becomes more important at low transverse - electric field and both the density and the distribution of charged - centers play an important role in el ectron transport in sic inversion layers. the radiation response and electric characteristics of 6h - sic mos structure is studied with experiment for the first time

    在實驗上首次對6h sicmos結構的電特性及其輻照引起的電參數退化進行了研究，結果說明：在氧化層電場較高時是fowler nordheim隧穿電流決定著sicmos結構的漏電流。
  8. Based on mos capacitive oxygen micro - sensor, the structure of mosfet oxygen micro - sensor was presented. the heater and temperature sensor are integrated into the device

    以mos電容式氧氣微傳感器的分析為基礎，設計mosfet氧氣微傳感器結構，在器件中集成了加熱元件和測溫元件。
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