mosfet 中文意思是什麼
mosfet
解釋
溝道的一端-
As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters
這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。 -
Power mosfet is adopted to switch heavy current of magnet core in order to control rotating magnetic field effectively
為了使磁場得到有效控制，本文採用功率nosfet實現電磁線圈大電流的開關。 -
The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。 -
Utilizing dual - gate mosfet as mixer in phase laser range finder
雙柵場效應管混頻器在相位法激光測距中的應用 -
The study shows that the impact of incomplete ionization on sic mosfet is more notable in subthreshold region than in strong inversion region
對于sicmosfet ，雜質不完全離化的影響主要在亞閾區。 -
The results of the analysis show that the impact of incomplete ionization on sic mosfet is more notable in subthreshold region than in strong inversion region
分析結果表明不完全離化對sicmosfet的影響主要集中在亞閾區。 -
Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法 -
Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices
Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。 -
To improve these models, based on detailed mechanism analysis, high frequency models of two typical power devices - double carriers pin diodes and single carrier power mosfet are proposed for emi simulation
本文對典型的兩種功率半導體器件?少子器件pin二極體和多子器件功率vdmosfet ，進行了深入地機理分析，提出了它們適合於emi分析的高頻模型。 -
After analyzing the switching characteristic of mosfet, the object function of optimizing curve of the output capacitance coss is confirmed according to the switching loss caused by output capacitance coss, then the optimized curve of the output capacitance coss is ascertained by applying zoutendijk to seek the optimized value with constraint ; the simulation of switching circuitry and dc - dc circuitry is tested at different frequency in pspice, then the least square method is adopted to fit simulation curves to calculate corresponding energy data
在電子線路模擬軟體pspice中進行了mosfet開關電路以及典型dc dc轉換線路模擬測試，針對不同頻段的測試結果，採用最小二乘擬合法對模擬曲線進行擬合，計算出相應的能量數據，最後綜合模擬結果確定出減小器件開關損耗，提高dc0c轉換線路效率的器件輸出電容cob優化曲線。 -
An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry
該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。 -
Power mosfet is a voltage - controlled appliance which has a fast switch speed, small driven current and higher threshold voltage. so it is the ideal power interface component of micro - computer
功率mosfet是一種電壓控制型器件，開關速度快，驅動電流小，開啟電壓較高，是微機的理想介面部件。 -
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded
當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。 -
The thesis discussed a parameter extraction program for the mosfet level1 model. in the analysis and design of circuit, at first, the thesis described the system function of the new dc - dc switching converter. then several sub - circuits of converter ic such as oscillator, over - temperature shutdown circuit, auto - restart counter circuit and control circuit were completely discussed
在電路設計中，本文首先分析了開關電源電路的基本拓撲結構和psm調制模式，接著對開關電源變換器進行了系統的原理分析並設計了總體框圖，然後詳細設計了振蕩器電路，熱保護電路，自動重啟計數器電路和主控門邏輯等子電路並進行了功能模擬。 -
Ppfc working principle, circular current and effects of clamping capacitor are studied in this paper in detail. because of the clamping capacitor, ppfc have some good features compared with ppc : reducing the fluctuate of the input current ; restraining the voltage spike of the power mosfet ; avoiding the bias - magnetic of the transformer
由於箝位電容的加入，相對于推挽電路而言，該拓撲具備了一些獨特的優點：減小了輸入電流的脈動：削弱了開關管的關斷電壓尖峰；有效抑制了變壓器的偏磁。 -
To reduce voltage stress of power switches, a series - parallel type cttfc is studied in this paper. voltage - sharing of input capacitors can be realized naturally in discontinuous conduction mode, andvoltage - sharing of input capacitors can also be realized naturally in continuous conduction mode. the voltage stress of power switches is only half of the input voltage, so power mosfet can be used in high input voltage applications
揭示了串?並型雙管組合變換器電流斷續工作方式時輸入電容電壓自然均壓的機理；對于電流連續工作方式，也能實現輸入電容自然均壓。輸出續流管串聯方式的串?串型雙管正激組合變換器，其輸入電容自然均壓特性與串?並型雙管正激組合變換器一致。 -
The final control circuit adopts power mosfet as current control device, which uses the principle of negative feedback to adjust and stabilize output current
末級電路採用功率mosfet作電流控制元件，運用負反饋原理穩定輸出電流。 -
It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna
本文證明了在cmos源端degeneration結構的低噪聲放大器中，忽略場效應管的柵漏電容將造成對放大管的最優柵寬估計過大。 -
During this precess, using the technology of optimizing the widths of both common source mosfet and common gate mosfet under a fixed power, we obtained a compromised result of power consumption and noise figure
設計過程中，在限定功耗的前提下，主要針對共源晶體管和共柵晶體管的柵寬，對電路的性能進行了優化，使得設計的lna的噪聲系數最小。
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