n-type 中文意思是什麼

n-type 解釋
或負型
  • n : 1. 【羅馬數字】90〈N＝90000〉。2. 【化學】＝nitrogen. 3. ＝North（ern）。N ＝nuclear 核的：N-waste 核廢料。
  • type : n 1 型，類型，（工業產品的）品種；風格，型式。2 典型，榜樣，樣本，樣板，模範，範本；典型人物；具...
  1. Its action site is located on the postsynaptic membrane and the biological activity of hwtx - i is located in the fifth p - turn containing lys25 and lys 27. to - conotoxin mviia is a neurotoxin belonging to one of n - type ca2 + channels inhibitors, purified from the venom of the conus marine snails, contains 25 amino acid residues with three disulfide binds. it adopts the pattern of ick and its linkage of the disulfide binds and space conformation are highly similar to hwtx - i

    -芋螺毒素mviia （ - conotoxinmviia ）是從芋螺屬（ conus ）海底蝸牛毒液中分離提純的一種活性多肽，屬于n -型ca ~ （ 2 + ）通道阻斷劑中一種，含25個氨基酸殘基，三對二硫鍵，其二硫鍵連接方式、分子的空間構象與hwtx -很相似，採取ick結構模體。
  2. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的P型襯底轉變成N型。
  3. The toxin can reversible block the neuromuscular transmission in an isolated mouse phrenic nerve - diaphragm preparation and also is a neurotoxin ( n - type ca2 + channels inhibitor ) which binds to the postsynaptic nicotinic acetylcholine receptor ( nachr )

    溶液構象研究表明，它採取自然界中其它蛋白質多肽普遍採用的一種緊湊、緻密的抑制劑胱氨酸結模體（ ick ） 。
  4. The temperature change during reaction of n - type metal oxide gas sensor

    型金屬氧化物氣敏元件的反應溫變
  5. Theory of reaction kinetics and statistical distribution of point defect of n - type metal oxide

    型金屬氧化物點缺陷的統計分佈
  6. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  7. X, y type is divided into n type left convolution and s type right convolution in line with direction of volution

    X ， y型根據螺旋方向的不同分為n型，左迴旋s右迴旋。
  8. As an air breaker with the minimal size in the world, the masterpact mt n type of breaker can meet requirements of various operating condition. it produces no flashover. it is free of maintenance and is fully intelligent. the breaking capability of masterpact mt n breaker upgraded is increased from 42ka to 50ka

    作為世界上體積最小的空氣斷路器， masterpactmtn型斷路器能滿足各種使用環境的要求、具有零飛弧、免維修、完全智能化等特點，而升級之後的masterpactmtn斷路器的分斷能力更是由42ka提升到50ka 。
  9. The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting

    6文章還對立方氨化硼薄膜的成核和生長機理，氮化硼薄膜的n型摻雜機制和bn型）侶i …型）異質結的電流輸運機制進行了探討。
  10. Conductivity type - the type of charge carriers in a wafer, such as “ n - type ” and “ p - type ”

    傳導性（電學方面） -一種關于載流子通過物質難易度的測量指標。
  11. A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers

    表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。
  12. When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.

    使一塊金屬與n型半導體接觸時，電子將從半導體流到金屬。
  13. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  14. It is showed that after doping s the bn thin films of n - type conductivity are obtained

    研究表明，未摻雜的氮化硼薄膜電阻率為為1
  15. 2 for the first time, rf sputtering method and vapor doping method have been combined to prepare n type bn films. bn films doped with s are n type conductivity

    摻s后的氮化硼薄膜表現出n型導電，未摻雜的氮化硼薄膜的電阻率1 . 8 1011 cm ，摻雜后的氮化硼薄膜的電阻率為7 . 3 107 cm 。
  16. The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi

    在ar氣保護下，對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現， zno薄膜呈現p型導電狀態，分析認為，這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜，反而進入了zno薄膜的間隙位置，成為正電中心，使zno薄膜呈現p型導電。
  17. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  18. Application of gpy - n type subbottom profiler in waterway engineering

    型淺地層剖面儀在航道工程中的應用
  19. Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work. in addition, we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic

    本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，並在此基礎上採用金屬au及ni在n型6h - sic硅面（ 0001晶向）上制備了具有一定特性的肖特基勢壘二極體。
  20. The atomic coherences in four and three level systems are discussed in this thesis : 1 ) atomic coherence effects in four - level n - type atomic system are discussed

    為此，我們對此做了一系列深入研究，本文的主體內容有二：第一，研究了n型四能級原子系統中的原子相干效應。
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