national semiconductor 中文意思是什麼

national semiconductor 解釋
國民半導體公司
  • national : adj 1 民族的；國民的；國家的；國民特有的。2 國家主義的；愛國的。3 國立的 國有的 國定的；全國性的...
  • semiconductor : n. 【物理學】半導體。
  1. The topic of this paper originates from the research " semiconductor property fdtd modeling in macrocosm ", which is aided by the national nature science fund

    本論文題目來源於國家自然科學基金項目「半導體特性fdtd全域建模」中的熱模型分析。
  2. Six international - level speakers sponsors and 126 qualified attendees and over 300 web cast audiences. sponsors included : motorola, enea, national semiconductor, micron, silicon laboratories, texas instruments

    贊助商包括：摩托羅拉公司歐洲原子能機構美國國家半導體公司micron公司硅實驗室公司德州儀器公司。
  3. In the past 21 years dalian office finished more than 120 projects all over north - east in the field of microelectronic, optical fiber and cable, lcd, biological and pharmaceutical, mechanic, assembly, steel, ship manufacturing and domestic buildings. some of the projects got the prize from national or provincial construction department. below are the reference projects dalian office finished these years : dalian dongfu lcd co., ltd, dalian haire industry park, guangyang bearings dalian co., ltd, konica dalian co., ltd, canon dalian office appliance co., ltd, pacifica electronics co., ltd, photoelectron dalian co., ltd, hyundai electronics dalian, rhi dalian co., ltd, yuanda pharmaceutical co., ltd, siemens vdo auto electronics changchun, toyota tianjin precise products co., ltd 6000, toyota zhangjiagang technology co., ltd, shenyang sico semiconductor co., ltd, dalian dongxian and dalian orient precise products co., ltd. dalian office will carry the principle make best design, provide satisfying service to provide our best service to the clients

    Edri大連分院成立至今完成120多項工程設計監理及工程總承包項目，其中多個項目工程設計獲得國家和部省級科技進步獎，先後完成了大連東福彩色液晶顯示器工程大連海爾工業園光洋軸承大連有限公司柯尼卡大連有限公司佳能辦公設備大連有限公司太平洋電子有限公司光電子大連有限公司現代電子大連有限公司奧鎂大連有限公司，大連高新生物制藥有限公司大連保稅區國際車城遠大制藥有限公司西門子威迪歐汽車電子長春有限公司豐田合成天津精密製品有限公司豐田合成張家港科技有限公司，沈陽科希-硅技半導體技術第一有限公司大連東顯電子有限公司大連東方精工有限公司等一大批高科技產業園區設計項目，並且進行全程質量跟蹤服務，在業內樹立起edri大連分院良好口碑，贏得了客戶廣泛好評，為我院在東北地區的發展做出了自己的貢獻。
  4. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  5. Is a hi - tech company specializing in developing and producing ceramic housing for high - power semiconductor devices. it s found in march 1992, located in yixing environmental protection industrial park. as a member of national electrical and electronics association, it obtained the iso - 9002 quality certificate in 2001

    十多年來，本廠在不斷擴大規模的同時，在技術上也不斷進行著改進，以高質量的產品而馳名中外，現在我廠已成為同行業中的佼佼者，是國家電力電子協會會員單位之一，且在2001年通過了iso - 9002質量管理體系認證。
  6. National semiconductor japan ltd

    日本國家半導體公司
  7. Their transmissions are rarely simultaneous, but mainly paroxysmal. second, network that based on this solution is convenient to be upgraded to full duplex. this nic uses dp83820, which is developed by national semiconductor of american, as the network control chip and could support both half duplex and full duplex just only to modify the software

    第二、採用該方案的網路很容易向全雙工交換式的網路升級，該網卡採用美國國家半導體（ nationalsemiconductor ）公司的dp83820作為網路控制晶元，可以同時支持半雙工與全雙工操作，只需改動軟體。
  8. Semiconductor instrument analysis introduction, 1999. semiconductor research center. national sun yat - sen university

    9半導體儀器分析介紹， 1999年，中山大學半導體推廣課程演講
  9. This work was supported by the state science and technology ministry of the p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. recently, gallium nitride ( gan ) as a wide band gap semiconductor has attracted more and more attention and advanced rapidly, mainly due to its promising applications in short - wave light - emitting devices, photodetectors, as well as anti - radiation, high frequency and high power electronic devices

    本碩士論文是基於國家科技部重點基礎研究發展規劃項目（ 973項目）子課題「硅基寬帶隙異質結構材料生長及器件研究」 （ 2000年10月- 2005年9月， no . g20000683 - 06 ）和國家自然科學基金（ no . 60046001 ）的一部分研究工作。
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