neutron irradiation 中文意思是什麼

neutron irradiation 解釋
中子輻射
  • neutron : n. 【物理學】中子。n. -ics 中子（物理）學。
  • irradiation : n. 1. 照耀；發光。2. 闡明，啟發。3. 【物理學】光滲，照光，輻照。4. 【醫學】照射。5. 擴散。
  1. Energy response of photomultiplier tubes to neutron irradiation

    光電倍增管中子直照靈敏度響應
  2. Moreover, we compute the change against neutron irradiation of heavy element abundance in typical branching point 85kr of s - process and result is good agreement with the former too

    重元素的核合成中最重要的因素之一是中子源問題，穩定的中子源是重元素的核合成必要保證。
  3. ( 2000 ). the neutron irradiation is assumed to derive primarily by the reaction 13c ( a, n ) i60 with a minor contribution from the marginal burning of 22ne through the channel 22ne ( a n ) 23mg in the final, high temprature phase of each flash. and we considered the influence of the various parameters such as the initial core mass, the envelope mass, the mass - loss rate, the overlap factor and the delution factor etc., and we vary their value with the pulse number

    本文採用分叉s -過程反應通道，以~ （ 13 ） c （ ， n ） ~ （ 16 ） o 、 ~ （ 22 ） ne （ ， n ） ~ （ 25 ） mg為雙脈沖中子源，用最新的中子俘獲截面，利用gallino和busso等人給出的agb星三殼層核合成模型，考慮到核心質量、挖掘程度、重疊因子、稀釋因子及星風質量損失率隨脈沖數的變化，詳細計算和研究了各個金屬豐度情況下的3m 。
  4. Irradiation defects decompounded and recombined with oxygen impurity and large quantity of nucleation centers were introduced in czsi bulk during annealing at 1100. in nitrogen atmosphere, more defects were induced in fast neutron irradiated czsi than in argon atmosphere

    不同氣氛下快中子輻照直拉硅中缺陷形成的差異很大， 1100的高溫退火中，與氬氣氛相比，氮氣氛退火樣品中出現了更多缺陷。
  5. It would take several hundred days to reach such a high dose by using currently available proton and neutron sources, while only several hours to several ten hours by the energetic heavy ion irradiation

    由於輻照劑量高，若用現有的質子或中子源進行輻照需要幾百天時間。採用重離子輻照模擬，僅需幾個小時至幾十個小時即可達到所需的輻照劑量，大大縮短分析測試周期。
  6. The experimental results show that the produced radiation damage and its thermal annealing behavior are the same for both irradiations in a - al2o3, and that the heavy ion irradiation can well simulate the neutron and / or proton irradiation

    實驗表明，兩種情況下輻照后的- al _ 2o _ 3材料中產生的輻照損傷及其退火效應一致，說明採用重離子輻照可以很好地模擬中子或質子輻照。
  7. In order to verify the reliability and validity of the heavy ion irradiation simulation of neutron and proton irradiations, radiation damage and its thermal annealing behavior in a - al2o3 irradiated at the equivalent dose by 85 mev 19f ions and by en > 1 mev neutrons, respectively, are studied

    為驗證重離子模擬輻照的可行性，首先進行了等效劑量下的中子輻照與重離子輻照后- al _ 2o _ 3樣品中輻照損傷及其退火效應研究。
  8. Radiation effects have been investigated up to - 30 dpa by the heavy ion irradiation simulation and positron annihilation lifetime techniques in the home - made modified 316l stainless steel and the commercially available stainless steel and tungsten, which are used as the beam window materials for the spallation neutron source in accelerator driven radioactive clean nuclear power system ( ads ). their radiation resistance properties are compared

    本工作採用重離子輻照模擬和正電子湮沒壽命測量技術研究了加速器驅動潔凈能源系統（ ads ）散裂中子源束窗材料鎢、普通不銹鋼和國產改進型316l奧氏體不銹鋼在0 30dpa輻照劑量范圍的輻照效應，並對它們的抗輻照性能作了比較。
  9. In respect of sic devices, an analytical model of 6h - sic jfet to well match the experimental results is proposed. the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal, mobility degradation and space charge density decrease

    對sicjfet的電參數如電子濃度，遷移率，電阻率和空間電荷區密度在中子輻照下的變化進行了分析，提出了中子輻照下6h - sicjfet的器件模型，利用此模型對sicjfet在室溫和300時的輻照響應進行模擬的結果和實驗值相符。
  10. S - process nucleosynthesis in agb star : the probability of a fe seed nucleus experiencing neutron irradiation

    鐵種子核受中子照射的概率
  11. Heavy ion irradiation of 80 mev 12c or 85 mev 19f is used to simulate the proton and neutron irradiation of the beam window materials for ads. the irradiation effects are examined by the positron annihilation lifetime technique

    在ads散裂中子源束窗材料輻照效應研究中，使用80mev的~ （ 12 ） c或85mev ~ （ 19 ） f離子模擬中子及質子輻照在束窗材料中產生的輻照損傷。
  12. Moreover, concentrations of interstitial oxygen in samples changed after fast neutron irradiation. the interstitial oxygen concentration of the samples decreased with increasing of irradiation dosage. this result can be explained in terms of higher generation rates of ( v - o ) complex

    另外，快中子輻照對于直拉硅的間隙氧含量有很大影響，間隙氧含量隨著輻照劑量的增加而減少，這主要歸于樣品中產生了大量的（ v - o ）復合體。
  13. In czochralski silicon crystals ( czsi ) through fast neutron irradiation, formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ), positron annihilation technology ( pat ) and scanning electron microscope ( sem ). the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron, positron annihilation average lifetime of samples increased with increasing of irradiation dosage. positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n. cm - 2 tended to constant

    本文對直拉硅樣品進行了不同劑量的快中子輻照，在硅中引入大量的亞穩態缺陷，研究這些亞穩態缺陷的形成，並在較寬的溫度范圍內對輻照樣品進行了退火處理，研究退火后亞穩態缺陷的轉化及同硅中氧的相互作用，應用傅立葉變換紅外光譜技術（ ftir ） 、正電子湮沒技術（ pat ）和掃描電鏡（ sem ）進行了測試。
  14. Interact of fast - neutron irradiation defects and oxygen impurity in cz - silicon was investigated in this paper. the result suggested that oxygen precipitation formed at high temperature was promoted by fast - neutron irradiation obviously. compared with ntdczsi, fast neutron irradiation accelerated precipitation in czsi much more

    本文對快中子輻照直拉硅中的缺陷和氧的相互作用進行了研究，快中子輻照促進了直拉硅中的氧沉澱，與以往ntdczsi研究結果相比，其促進作用更加明顯。
  15. Considerations include mechanical loading, brittle fracture, in - elastic behavior, elevated temperatures, neutron irradiation, and seismic effects

    其中考慮到機械負載、脆性斷裂、彈性行為、上升的溫度、中子照射及地震效應。
  16. Standard guide for neutron irradiation of unbiased electronic components

    未加偏壓的電子元件的中子照射標準指南
  17. Semiconductor devices - mechanical and climatic test methods - neutron irradiation

    半導體器件.機械和氣候試驗方法.中子輻照
  18. Semiconductor devices - mechanical and climatic test methods - part 17 : neutron irradiation

    半導體器件.機械和氣候試驗方法.第17部分:中子輻照
  19. Calculation of absorbed dose from neutron irradiation by application of threshold - foil measurement data

    用分界箔測量數據計算來自中子輻射的吸收劑量
  20. Semiconductor devices - mechanical and climatic test methods - part 17 : neutron irradiation iec 60749 - 17 : 2003 ; german version en 60749 - 17 : 2003

    半導體器件.機械和氣候試驗方法.第17部分:中子輻射
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