nitridation 中文意思是什麼

Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma

等離子體對硅表面的低溫大面積氮化

Different nitridation programs have produced straight and smooth gan nanowires and herringbone gan nanowires on quartz substrates, respectively

我們通過改變氮化程序，分別在石英襯底上合成了平直的gan納米線和魚骨形gan納米線。

Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。

Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )

通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。

( 2 ) with the aid of in situ monitoring tool, we have investigated the effects of substrate nitridation

（ 2 ）以在位監測為輔助工具，研究了藍寶石襯底氮化的影響。

The effect of oxygen on nitridation of silicon by nitrogen is discussed in the theory of physical chemistry

從理論上詳細地分析了二氧化硅氮化與矽片氮化的關系和氧分在氮化過程中對氮化的影響。

The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen

在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。

At same time macroscopical and microcosmic mathematical model of nitridation are investigated. in this paper the thermodynamics of direct - nitridation, effect of temperature and nitrogen ambience on nitridaton and self - diffusion are discussed in the theory of physical chemistry in detail

同時本文用物理化學的原理討論了矽片氮氣直接氮化的熱力學方程、氮化條件的理論根據和原子的自擴散，從理論上證明隨溫度升高氮化加劇，氣氛純度越高氮化越容易的結論。

For the first time, we reported the barrier height of au / algan is 1. 08ev by analysis on various i - v curves under corresponding temperatures. 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation

3 、採用金屬鎵層氮化技術，利用我們自行改造的熱蒸發設備和氨氣氮化設備，在無定形石英襯底上生長出具有擇優取向的多晶gan ，取得了一些階段性的成果。

The formation mechanism of titanium nitride powders by reduction of carbon and nitridation was researched by method of continuous weighing. the possibility to obtain the titanium nitride from this process was asserted by thermodynamical analysis and by the means of x - ray diffraction and sem

用連續稱重法研究了鈦白粉被活性碳還原氮化合成氮化鈦粉末的還原氮化反應機理，並進行了反應的熱力學、反應產物的顯微結構以及x - ray衍射分析。

The employ kaolinite / polyacrylamide intercalation compound as a raw material to in - situ synthesize sialon was test by the carbothermal reduction and simultaneous nitridation ( crsn ) technique. this work was supported by the national natural science foundation of china ( grant no. 40072014 ), the natural science foundation of guangdong province ( grant no. 010496 ) and the foundation of state key laboratory for physical chemistry of solid surfaces in xiamen university ( grant no. 9911 )

研究工作得到國家自然科學基金項目《高嶺石礦物表面功能基及其反應活性研究》 （項目批準號： 40072014 ） 、廣東省自然科學基金項目《高嶺石有機插層原位合成- sialon納米材料》 （項目批準號： 010496 ）和廈門大學固體表面物理化學國家重點實驗室開放基金項目（項目批準號： 9911 ）的資助。

By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。

Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。

The procedure of direct - nitridation in nitrogen and the growth mechanism are analyzed. in the end the direct - nitridation of silicon dioxides in nitrogen is investigated with edx and optical microscopy

從並分析了氮氣和硅反應各個階段的反應過程和機理，得到了氮氣不可能直接分解為氮原子，而是通過化學吸附來實現的結論。

Samples are prepared at 1100 and 1200 for different time from 5 minutes to 4 hours to study direct - nitridation kinetics. the thickness of the silicon nitride films is measured by single - spot thickness system produced by filmetrics co. ltd. the direct - nitridation kinetics curve is attained and the maximum thickness of the silicon nitride film is about 50nm

為研究矽片氮化動力學，在1100和1200的溫度下制備了從5分鐘到4小時的各個氮化時間的樣品，並採用了不同晶面取向的矽片和不同的矽片放置位置，用filmetrics公司生產的f20型膜厚測量儀測得各個樣品的厚度，得到了實際的氮化動力學曲線和氮化薄膜的最終膜厚約為50納米，氮氣曲線較好地符合了氣固反應類型的動力學曲線。

Choosing suitable nitridation temperature can get ideal one - dimensional gan nano structures. ga2o3 attached on the surface of one - dimensional gan nano structures would be found if the nitridation temperature is low ( < 900 )

氮化溫度過高（高於1000oc ） ，一維gan納米結構的產量驟減，氮化溫度升高到1050oc ，一維gan納米結構基本消失。

3. the nitridation programs also affect the surface morphology of gan nanowires

氮化程序也會影響一維gan納米結構的形貌。

Phase transformations in process of carbothermal reduction nitridation of pyrophylite at different temperatures

高嶺土在碳熱還原氮化過程中的相變

Progress in synthesis reaction dynamics of ' - sialon by carbothermal reduction and nitridation with natural raw materials

3復合材料的結構性能和優質彌散相的合成熱力學

In this paper, the condition of direction - nitridation, the kinetics and nitridation mechanism are discussed in experiment and theoretically

本文研究了矽片在熱處理條件下的氮化條件和動力學，並從理論上探討氮化機理，得到了很好的結果。