nitride passivation 中文意思是什麼
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By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched
實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
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