nitride process 中文意思是什麼

nitride process 解釋
氮化硅工藝
  • nitride : n. 【化學】氮化物。
  • process : n 1 進行，經過；過程，歷程；作用。 2 處置，方法，步驟；加工處理，工藝程序，工序；製作法。3 【攝影...
  1. Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

    熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性
  2. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  3. The formation mechanism of titanium nitride powders by reduction of carbon and nitridation was researched by method of continuous weighing. the possibility to obtain the titanium nitride from this process was asserted by thermodynamical analysis and by the means of x - ray diffraction and sem

    用連續稱重法研究了鈦白粉被活性碳還原氮化合成氮化鈦粉末的還原氮化反應機理，並進行了反應的熱力學、反應產物的顯微結構以及x - ray衍射分析。
  4. Effect of atmosphere on synthesis of titanium nitride in aluminothermic reduction process

    反應氣氛對鋁熱還原氧化鈦合成氮化鈦的影響
  5. Abstract : to promote development of low alloy steel bearing vanadium and mitrogen, the process, conditions and products of preparing nitrided ferrovanadium and vanadium nitride are introduced on the basis of main documents

    文摘:為推動含釩氮低合金鋼的發展，在查閱主要文獻的基礎上，重點介紹了氮化釩鐵及氮化釩制備的工藝方法、條件及產品情況。
  6. The improved neural network is applied in study of the relationship between reaction parameters of electroless plating nickel in the process of the metallization of aluminum nitride and the adhesion strength between the metal layer and the substrate

    為得到較大的氮化鋁金屬化層粘附力，運用基於穩健估計的神經網路研究氮化鋁金屬化中化學鍍鎳的反應參數與金屬層粘附力的關系。
  7. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  8. In this thesis adding the pre - process carbon nanotubes into the powder of silicon nitride, with ball milling, drying and sieving, fabricate the silicon nitride ceramics applying the hp sintering method, which in order to improve the toughness of the silicon nitride

    本文就是利用碳納米管優良的力學性能，在對其預處理后，將其添加到氮化硅陶瓷粉末中，經球磨、乾燥、過篩后，採用熱壓燒結工藝，制備氮化硅陶瓷，以期改善氮化硅陶瓷的韌性。
  9. The result of the xrd, sem and tem analysis show that the densification process was controlled by the mechanical of liquid phase sintering with the addition of mgo and ce02 as the sintering aid. the mgo - ceo2 would react with the sio2 which was on the surface of the silicon nitride particles to from silicate liquid phase to accelerate the densification

    通過xrd 、 sem 、 tem等測試結果表明，由於同時添加了mgo和ceo _ 2作為助燒劑，其緻密化過程為液相燒結，由燒結助劑和si _ 3n _ 4表面的sio _ 2反應形成低熔點的硅酸鹽相，促進燒結緻密化，冷卻后，在晶界形成玻璃體。
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