npn npn 中文意思是什麼

npn npn 解釋
三極體
  1. 1. analyzed the especial digestant physiology characteristics of grass - eating animal, ruminants are able to disgest crude fiber by rumen microorganism, save protein feed by using npn, meanwhile, cecum can disgest crude fiber

    1 、分析了草食家畜的特殊消化生理特性。草食家畜可以利用瘤胃微生物消化粗纖維，利用npn節約蛋白質飼料;同時盲腸也可以消化部分粗纖維。
  2. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  3. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  4. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  5. Then an thorough computer modeling using finite element program with material, geometry and state triple - nonlinear taken into account is carried out on a series of influencing factors, such as comparison with npn - beam splice connection, comparison of varies designed theories, and the varying of fraction coefficient, diameter, grade, pretension and arrangement of bolts, thickness of web and flanges of beam and column, splicing location, axial loading on column, etc. lots of useful conclusions are drawn form computer modelling. finally, design and construction suggestions are given out. this study fills the black in the field of steel beam - to - column connection with cantilever beam high - strength bolted - splicing at both home and abroad

    然後，本文在考慮材料、幾何和狀態三重非線性的基礎上，對該連接形式進行了全面的計算機模擬，主要考慮了帶懸臂梁段全螺栓拼接的樑柱連接節點與無拼接的樑柱連接及翼緣對接焊接腹板拼接的連接節點的對比，各種設計方法之間的對比，以及翼緣拼接和腹板拼接的螺栓間距、直徑和數量，拼接點與梁端之間的距離，梁和柱的翼緣、腹板厚度，柱的軸力，接觸面的摩擦系數，翼緣和腹板拼接板的厚度等因素的影響。
  6. The results showed that in the beef cattle fed with chinese medicine additive, daily gain, number of lymphocyies and glucose and calcium concentrations in the blood were significantly increased, while npn content was decreased, some indexes, such as number of leucocyte, feed conversion rate and digestive rate of nutrients, had a tendency to rise, but there were no significant differences between treatment and control groups

    結果表明，肉牛日糧中添加中藥飼料添加劑，可顯著提高日增重、血液中淋巴細胞數量、血糖和血鈣含量，非蛋白氮含量顯著下降；血液中白細胞、分葉細胞、採食量、飼料轉化率、各養分消化率均有上升趨勢，但組間無顯著差異。
  7. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  8. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  9. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  10. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  11. In the diagram, the output of the error amp is connected to the base of an npn transistor : when the error amp drives current into this transistor ' s base, it allows current to flow from collector to emitter, and that transistor in turn pulls current from the base of the pass transistor

    在這個圖里，誤差放大器的輸出端連接到了一個npn三極體的基極上：當誤差放大器輸出電流到了三極體的基極上，三極體允許電流從集電極向發射極流動，這個傳輸三極體工作時就是就是從基極吸取電流的過程。
  12. Semiconductor discrete devices. detail specification for type bt51 npn silicon small power difference matched - pair transistor

    半導體分立器件. bt51型npn硅小功率差分對晶體管詳細規范
  13. Semiconductor discrete devices. detail specification for type 3dg216 npn silicon low - power difference matched - pair transistor

    半導體分立器件. 3dg216型npn硅小功率差分對晶體管詳細規范
  14. Semiconductor discrete device. detail specification for type 3dk100 npn silicon low - power switching transistor

    半導體分立器件. 3dk100型npn硅小功率開關晶體管詳細規范
  15. Semiconductor discrete device. detail specification for type 3dk106 npn silicon low - power switching transistor

    半導體分立器件. 3dk106型npn硅小功率開關晶體管詳細規范
  16. Npn pnp digital input

    輸入信號可切換npn pnp功能
  17. Npn or pnp transistor output using a reliable, adjustable response time

    使用npn或pnp晶體管的可靠輸出，可調節的響應時間
  18. Npn transistors are normally superior to their pnp counterpart in performance

    Npn晶體管在性能方面通常優於它們對應的pnp晶體管。
  19. The results show that enhanced low - dose - rate sensitivity ( eldrs ) exists in both domestic and imported bipolar transistors, and the npn transistors are more obvious than pnp transistors

    結果表明：在輻照的劑量率范圍內，無論是國產還是進口的雙極晶體管，都有明顯的低劑量率輻照損傷增強現象，且npn管比pnp管明顯。
  20. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg120

    半導體分立器件. 3dg120型npn硅高頻小功率晶體管.詳細規范
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