o plasma 中文意思是什麼
o plasma
解釋
也會在-
Intense pl band at 300 - 570nm, whose central position was found red - shifted with the increase of o content, was observed in the a - sihxoy thin films fabricated by pecvd. thin films with strong blue pl peaks were prepared by plasma oxidation, and the result directly proved that the blue pl peaks were originated from si - o defect levels
通過pecvd法與放電等離子體氧化技術結合獲得了主峰位於藍光波段的熒光帶，而且具有分立峰結構，其結果直接證明了藍光發射與缺陷能級有關，起源於si - o結合特定組態而形成的發光中心。 -
In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。 -
Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o. lum - pattern. in recent years, several key technologies have been developed rapidly such as laser producing plasma source, extreme ultraviolet multilayer, optical fabrication and metrology, projection - camara alignment, low - defect mask and control technology of stage
極紫外投影光刻（ extremeultravioletlithography簡稱euvl ）最有可能成為下一世紀生產線寬小於0 . 1 m集成電路的技術，近年來在激光等離子體光源、極紫外多層膜、光學加工和檢測、光學精密裝調、低缺陷掩模、光刻膠技術以及高穩定工作臺系統控制等關鍵技術方面得到了飛速發展。 -
The regulatory effect of kebi kang on nitric o xide in sciatic nerve and plasma in diabetic rats
渴痹康對糖尿病大鼠神經及血漿中一氧化氮的調節作用
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