optical absorption band 中文意思是什麼

optical absorption band 解釋
光吸收帶
  • optical : adj 眼的；視覺的；視力的；幫助視力的；光學（上）的。 optical activity 【物理學】旋光性。 an optic...
  • absorption : n. 1. 吸收，合併。2. 專心，一心不亂，熱中 （in）。3. 〈口語〉飲食。
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  2. The studies on optical properties and irradiation effect of heavy ion implanted samples are very important from both theoretical and applied view points. in this work, the optical properties and defect structures in xe + - implanted ysz and ni + - implanted al2o3 were studied by using optical spectroscopy, tem, xps and trim 96 calculation. it was found that 1 ) a broad absorption band centered at 522 nm was observed in 1 1016 cm - 2 xe + - implanted ysz

    離子注入是一種重要的表面改性技術， ysz （ yttria - stabilizedcubiczirconia ）和- al _ 2o _ 3是兩種性能優良的陶瓷，前者是目前發現的最抗輻照的絕緣體，而後者則是抗輻照最差的絕緣體材料之一，研究重離子注入對其光學性能的影響並以此研究輻照效應，有重要的理論意義和應用價值。
  3. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  4. On the basis of uv - vis transmissive spectra, the sputtered films have absorption peaks toward longer wavelength, and the calculation shows the lower optical band gap

    適當的摻雜量可以產生新的吸收峰，增加對長波段光的吸收，提高光催化效率。
  5. The ultraviolet absorption edge becomes steep and moves to longer wavelength, and the optical band gap decreases. the optimal quality and ultra - violet absorption property of the zno thin film annealed at 450 are obtained

    中性氣氛中退火薄膜的電阻率基本不變，在真空和還原氣氛中薄膜的導電能力增強，而在氧化氣氛中薄膜的電阻顯著增加了七個數量級，成為絕緣薄膜。
  6. Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x

    採用光吸收法測得mn人d n 。 te 。晶體屬于直接帶隙半導體，其能隙eg隨著組分互的增加線性增大。
  7. Quantum confinement effect was observed in the films by measurements of absorption spectrum of ge - sio2 films. the widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films

    光吸收特性研究表明，因量子限域效應，對于ge - sio _ 2薄膜觀察到較強的光吸收和光吸收邊隨ge顆粒尺寸變小而藍移的現象。
  8. After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate

    運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。
  9. X - ray diffraction ( xrd ), uv - vis absorption spectroscopy and photoluminescence spectroscopy ( pl ) were employed to study the structural and optical properties of mgxzn1 - xo alloy thin films. the experimental results show that the films were hexagonal wurtzite structure and the band - gap of mgxzn1 - xo alloy thin films gradually increased with increasing mg content. the quality of mgxzn1 - xo alloy thin films can be greatly improved by means of annealing in oxygen ambient

    實驗結果表明，利用溶膠-凝膠法制備的mg _ xzn _ （ 1 - x ） o納米薄膜為六角纖鋅礦結構，粒徑為3 5nm ，隨著mg含量的增加帶隙變寬；通過在氧氣氣氛下退火處理后， mg _ xzn _ （ 1 - x ） o納米薄膜表現出了較好的結構和發光特性，表明熱處理可提高薄膜質量。
  10. Their optical properties are characterized by z - can technique, uv - visible absorption spectrum and so on. the experimental results indicate that although large nonlinear refractive index is observed in two pbs / cds systems with different band gap, the sample of bigger band gap exhibit obvious nonlinear absorption in the range of nonresonance

    另外，我們改變制備條件，得到了光學帶隙不同的pbs cds納米復合體系，並採用z -掃描技術研究了它們的非線性光學性質。兩個樣品都具有大的非線性折射率，但光學帶隙大的樣品在非共振區域表現出明顯的非線性吸收。
  11. The shimadzu uv - 3101 spectrophotometer was employed to get the uv - visible transmission and reflection spectra. both of the absorption coefficient ( a ) and optical band gap ( eg ) were calculated from the transmission and reflection spectra of the films. it was observed that eg decreased with an increase in the deposition pressure

    採用紫外-可見光分光光度計測定了納米- sic薄膜透射光譜和反射光譜，並通過樣品的透射光譜和反射光譜計算了納米- sic薄膜吸收吸收系數和光學帶隙eto實驗結果表明，增大工作氣壓導致納米- sic薄膜的光學帶隙的減小。
  12. The results show that the differences between the two composites are very large. although the micrograph of the ni nano - wire and the co nano - wire are nearly the same, as the metal composition increased, the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ), however, the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ). meanwhile, the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively

    或no組份比的增加， ni / aao吸收邊的紅移量僅約13nln ，而co / aao的吸收邊紅移量卻超過了80lun ，分析發現ni / aao復合體系具有間接帶隙半導體的光學特徵，而co從ao復合結構則具有直接帶隙半導體的光學特徵; 5 .實驗研究了a創aao納米有序陣列復合結構的光吸收特性，在其光吸收譜上出現了較強的ag表面等離子體振蕩吸收峰，隨ag沉積量的減少，吸收峰位發生紅移，且逐漸展寬
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