optical defect 中文意思是什麼
optical defect
解釋
光缺陷-
At recent decade, accompany with surface mount technology printed - circuit board to produce fly of automation degree to soon develop, as to it ' s correspond of mass defect the inspection also put forward higher request, from in brief shoot to be like system to complicated " 3 - d " x optics to examine system, the automatic optical inspection is in great quantities adopt by the each production factory house
摘要在最近十年，伴隨著表面貼裝印刷電路板生產自動化程度的飛速發展，對其相應的質量缺陷檢查也提出了更高的要求，從簡單的攝像系統到復雜的" 3 - d " x光檢測系統，自動光學檢測系統大量被各生產廠家採用。 -
The studies on optical properties and irradiation effect of heavy ion implanted samples are very important from both theoretical and applied view points. in this work, the optical properties and defect structures in xe + - implanted ysz and ni + - implanted al2o3 were studied by using optical spectroscopy, tem, xps and trim 96 calculation. it was found that 1 ) a broad absorption band centered at 522 nm was observed in 1 1016 cm - 2 xe + - implanted ysz
離子注入是一種重要的表面改性技術， ysz （ yttria - stabilizedcubiczirconia ）和- al _ 2o _ 3是兩種性能優良的陶瓷，前者是目前發現的最抗輻照的絕緣體，而後者則是抗輻照最差的絕緣體材料之一，研究重離子注入對其光學性能的影響並以此研究輻照效應，有重要的理論意義和應用價值。 -
Cadmium germanium arsenide, cdgeas2, has promising advantage for its attractive nonlinear optical properties in all chalcopyrite semiconductors. it has an extremely high nonlinear coefficient, a wide infrared transparency range, but crystal of cdgeas2 has a strong absorption at 5. 5 m which related to a native acceptor - defect
砷化鍺鎘晶體（ cdgeas2 ）是黃銅礦類半導體晶體中綜合性能最優者，其非線性光學系數和遠紅外區透過率很高，但其在中紅外區5 . 5 m有較強的吸收。 -
In order to eliminate the defects, especially te precipitates, cd1 - xznxte slices were annealed in cdzn vapor in the present researches. the variation of te - rich phases in morphology and sizes during the annealing and its effects on the optical and electrical properties of the crystals were examined in detail. the defect chemistry calculations were made
本文的主要內容就是研究退火過程中cd _ （ 1 - x ） zn _ xte晶體內富te相的形態、大小的變化及其對晶體光、電性能的影響，並通過缺陷化學計算，結合實際的退火實驗，制定相應的退火工藝，改善晶體性能。 -
After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate
運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。 -
This text analyzed the application of automatic optical inspection from defect analysis and defect category and the process everyone ' s noodles of the defect inspection of surface mount technology printed - circuit board
本文從表面貼裝印刷電路板的缺陷分析和缺陷種類及缺陷檢查過程各方面分析了自動光學檢測系統的應用。 -
Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o. lum - pattern. in recent years, several key technologies have been developed rapidly such as laser producing plasma source, extreme ultraviolet multilayer, optical fabrication and metrology, projection - camara alignment, low - defect mask and control technology of stage
極紫外投影光刻（ extremeultravioletlithography簡稱euvl ）最有可能成為下一世紀生產線寬小於0 . 1 m集成電路的技術，近年來在激光等離子體光源、極紫外多層膜、光學加工和檢測、光學精密裝調、低缺陷掩模、光刻膠技術以及高穩定工作臺系統控制等關鍵技術方面得到了飛速發展。 -
Since 1987, many researchers have been engaged in the realization of photonic bandgaps, localized defect modes, and other optical properties peculiar to the photonic crystals. because photonic crystals are artificial crystals, it is our studing issue to design and fabricate the photonic crystals. many accurate numerical calculations could be performed thanks to the development of computing facilities. these calculations were really useful for the design of the photonic crystal structures
自從1987年以來，許多研究人員試圖去實現光子晶體中的光子頻率帶隙和局域缺陷模以及其它一些光學特性。由於光子晶體是人造晶體，因此設計和製成光子晶體，就成了研究的焦點。 -
We modify the defect by applications of optical tweezers technology. structural defects can dictate the properties of photonic bandgap materials, adding intentional defects within the crystal are needed
在實際的應用中，缺陷的結構決定了光子帶隙材料的性質，這就需要人為的製造出具有特殊用途的缺陷。 -
An imperfect image caused by a physical defect in an optical element, as in a lens
色差由於光學器件（如透鏡）的物理缺陷而造成的不完美成象 -
In 1987, a remarkable step was made by yablonovitch, who pointed out the possibility of the realization of photonic bandgaps, localized defect modes, and their applications to various optoelectronic devices, and by john who dicussed the strong localization of electromagnetic waves in disordered photonic crystals and also predicted many interesting quantum optical phenomena that can be realized in photonic crystals such as the bound state of photons and non - exponential decay of spontaneous emission
1987年yablonovitch和john開創性地提出光子晶體這一新概念， yablonovitch指出了有可能實現光子頻率帶隙和局域缺陷模以及許多光電技術方面的應用， john則討論了在無序光子晶體中電磁波的強烈局域現象，並預言在光子晶體中存在許多有趣的量子光學現象，諸如光子局域態、自發輻射的非指數衰減。
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