optical lithography 中文意思是什麼

optical lithography 解釋
光學平板刻法
  • optical : adj 眼的;視覺的;視力的;幫助視力的;光學(上)的。 optical activity 【物理學】旋光性。 an optic...
  • lithography : n. 石印〈平版印刷〉術;平版印刷品。
  1. As the ic manufacturing process develops from sub - micron to very deep submicron ( vdsm ) technologies, with current lithography tools ( 248nm and 193nm ), foundries can not manufacture products that designs want because of so - called optical proximity effect ( ope )

    當集成電路生產工藝發展到納米級時,利用現有的曝光設備( 248nm和193nm ) ,由於所謂的光學鄰近效應,集成電路製造廠商已經無法製造出滿足電路功能要求的產品。
  2. The basics of lithography process, as well as the basic structure of lithographic system and the basic theory of partially coherent imaging are introduced in this paper. a bi - linear model of optical imaging is also presented. based on these theories, the simulation process of csplat is particularly analyzed, especially the computation of tccs ( transmission cross coefficient ) under different illuminations and the processing of primary lens aberrations inside tcc computation process

    本文從光刻基本過程入手,介紹了光刻機光學系統的基本組成、部分相干光透射成像的基本原理,提出了光學系統的雙線性模型,並在此基礎上詳細分析了模擬軟體splat的模擬過程,其中著重分析了光學系統的傳輸交叉系數tcc的計算,包括不同照明系統下tcc的計算以及tcc計算中像差的處理。
  3. Before more advanced lithography tool is produced, in order to use current tools to manufacture vdsm ic, reticle correction methods such as perturbing the shape ( via optical proximity correction ( opc ) ) or the phase ( via phase - shifting masks ( psm ) ) of transmitting aperture in the reticle are proposed by the industry

    在波長更小的光刻系統出現前,為了能利用現有設備解決集成電路的可製造性問題,工業界提出了對掩模作預失真(光學鄰近校正)和在掩模上加相位轉移模(移相掩模)等的掩模校正方法。
  4. It has broad application prospect in the following fields such as microelectronics, photoelectronic devices, large screen flat panel display, field emitter array, acoustic surface wave device, photon crystal, light waveguide array, holographic honeycomb lens and micro - optical element array, micro - structure manufacture, fabrication of large area grating and grid of high resolution, photoresist performance testing, profile measurement and metrology, etc. the paper only involves the primary research of interferometric lithography

    在微電子、光電子器件、大屏幕平板顯示器、場發射器陣列、表面聲波器件、光子晶體、光波導陣列、全息透鏡和微光學元件陣列、微結構製造,高分辨、大面積光柵和網格製造,在抗蝕劑性能測試、面形測量和計量等領域,干涉光刻技術都具有廣闊的應用前景。
  5. Being one of the key technologies of euvl, the alignment of optical lithography system affects directly the final imaging quality of the system

    作為euvl關鍵技術之一,微縮投影光學系統的精密裝調直接影響著系統的最終成像質量。
  6. Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o. lum - pattern. in recent years, several key technologies have been developed rapidly such as laser producing plasma source, extreme ultraviolet multilayer, optical fabrication and metrology, projection - camara alignment, low - defect mask and control technology of stage

    極紫外投影光刻( extremeultravioletlithography簡稱euvl )最有可能成為下一世紀生產線寬小於0 . 1 m集成電路的技術,近年來在激光等離子體光源、極紫外多層膜、光學加工和檢測、光學精密裝調、低缺陷掩模、光刻膠技術以及高穩定工作臺系統控制等關鍵技術方面得到了飛速發展。
  7. Based on light interference, diffraction and optical holography theory, the paper comprehensively describes the basic principle, main types, development trend as well as the objective and significance for carrying out the research of laser maskless interferometric lithography and holographic lithography

    本論文基於光的干涉和衍射及光學全息照相理論,綜合評述了光學光刻的基本原理、主要類型、發展趨勢及開展激光無掩模干涉光刻和全息光刻研究的目的和意義。
  8. Interferometirc lithographic technology incorporates laser, interference optics, diffraction optics and optical lithography and it is a frontier research subject in microfabrication technology and microelectronic field sponserd by national natural science foundation of china. the research for this technology in theory, simulation and experiments has important scientific meanings and broad application prospect for promoting lithographic limit, developing nanometer electronic and photoelectron devices, novel large screen panel display and novel lithographic equipment of our country

    干涉光刻技術集激光、干涉和衍射光學及光學光刻於一體,是國家自然科學基金資助的微細加工技術和微電子領域的前沿研究課題,對其進行理論、模擬和實驗研究,對推進光學光刻極限,發展我國納米微電子和光電子器件、新型大屏幕平板顯示器和新型光刻機具有重要的科學意義和廣闊的應用前景。
  9. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century. this technology builds on conventional optical lithography experience and infrastructure, uses 11 - to 14 - nm photon illumination, and is expected to support multiple technology generation from 65 nm to 35 nm

    極紫外投影光刻( euvl , extremeultravioletlithography )技術作為下一代光刻技術中最佳候選技術,建立於可見/紫外光學光刻的諸多關鍵單元技術基礎之上,工作波長為11 14nm ,適用於製造特徵尺寸為65 35nm的數代超大規模集成電路,預計在2006年將成為主流光刻技術。
  10. Fabrication of nanostructures based on spm as an extension to spm imaging, referred to as scanning probe nanofabrication ( spn ) is an emerging technique undertaken at labs in the past ten years that comprises manipulation of atom or molecule in a bottom - up paradigm and scanning probe lithography ( spl ) in a top - down paradigm. in chapter one, in the light of decentralized experimental data in this respect, the author, classify in an analytic approach the literature concerned as electrical spl, mechanical spl, thermal spl, and optical spl in terms of different mechanisms of interplay between a probe and a surface of a sample, after describing the most important of this type of microscopy, i. e., scanning tunneling microscopy and atomic force microscopy

    由於這項技術的實驗數據比較分散,因此,作者在論文的第一章里首先介紹了掃描探針顯微鏡的兩個最重要的類型,即掃描隧道顯微鏡和掃描原子力顯微鏡的工作原理;然後根據加工方式的不同把它分為自下而上的掃描探針原子(分子)操縱與自上而下的掃描探針刻蝕兩大類;而根據掃描探針與樣品的不同作用機理,對掃描探針刻蝕加工又進行了歸納與綜述,對其特殊的加工方法作了原理性的介紹,並分析了目前存在的共性問題與應用前景。
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