oxide charge 中文意思是什麼
oxide charge
解釋
氧化物裝料-
4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate
4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。 -
The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption
納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。 -
In order to reduce and compensate charge phenomena at the surface of non - conductive oxide materials under the electron irradiation, oxygen environmental scanning electron microscopy ( sem ) is offered in this thesis
本論文提出氧環境掃描電子顯微分析方法，以減輕和補償非導電氧化物類樣品在電子束輻照作用下的表面充電現象。 -
Charge qs was located near the interface of silicon and oxide. with more charge, the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector, and then the vertical breakdown voltage was raised. the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism
該模型認為，將界面電荷qs引入i層si / sio2的si界面，根據電位移矢量的全連續性，界面電荷qs越多，使i層內電場增加，直至sio2的臨界電場，從而提高縱向擊穿電壓vb . v ，很好得解決了器件的縱向耐壓問題。 -
The results show that hh silc is attributed to oxide hole detrapping and the annihilation of positive charge - assisted tunneling centers
研究結果表明：熱空穴silc機制是由於氧化層空穴的退陷阱效應和正電荷輔助遂穿中心的湮滅。 -
A model of the sic pn junctions irradiated by neutron is presented. the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在輻照的電離效應方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。 -
Due to their high oxidation, multiple electron transfer, and high intrinsic energy, we refer to the cells containing fe ( vi ) compounds as " super - iron " batteries with more energy capacity compared to conventional alkaline batteries. the three charge reduction of fe ( vi ) represents a high energy and capacity source of cathodes, and the products ( ferric oxide ) have been considered as an environmentally benign substance
如果fe （ ）化合物作為電池的陰極材料時，其氧化反應為3電子過程，且反應產物為fe _ 2o _ 3 （鐵銹） ，與一般傳統堿性電池相比，它是一種高能，而且放電產物對環境無污染的綠色電池，目前，它的研究已成為電池研究領域的一個熱點。 -
Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too
首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。 -
The results show that charge to breakdown qbd depends not only on the gate oxide quality but also on the voltage stress, current density and the gate oxide area
結果表明：相關擊穿電荷q _ （ bd ）除了與氧化層質量有關外，還與電壓應力和電流密度以及柵氧化層面積有關。
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