p mode 中文意思是什麼

A complementary input stage, which consists of a p - channel pair and a n - channel pair, was used in the circuit, so that the common mode input range can extend from rail to rail. a dcls is used to shift the n - transistor curve leftward to overlap the p - transistor curve properly and keep constant transconductance in the whole common mode input range

輸入級採用pmos差分輸入對和nmos輸入差分對並聯的結構，從而實現共模輸入范圍擴大到電源的正負兩端，並且通過兩個源級跟隨器平移nmos輸入管跨導曲線，使nmos輸入管和pmos輸入管跨導曲線的適當交疊，從而保持了這個輸入級的跨導在整個共模輸入范圍內保持恆定。

For micro - cavity semiconductor laser, station model is proposed in this paper and its steady - state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. for current noise, sp noise, noise, p noise, as well as current modulation, sp modulation, modulation and p modulation, using small - signal approximation, we derive the laser ' s corresponding transfer functions. and we calculate their signal - to - noise ratio ( snr ) gain in various parameters through frequency domain analysis in the premiss of large input snr

本文對于微腔半導體激光器，提出站模型，能夠較直觀簡潔地分析微腔半導體激光器的穩態和瞬態特性，利用此模型對具有重要實用價值的= 1的微腔半導體激光器進行了討論；對于電流i噪聲、自發發射壽命_ （ sp ）噪聲、自發發射因子噪聲、光子壽命_ p噪聲，以及電流調制、 _ （ sp ）調制、調制、 _ p調制，在小信號近似下，得到了相應的激光器的傳遞函數；在大信噪比的前提下，對激光器進行了頻域分析，分別計算了它們在不同參數下的信噪比增益，分析了其抗噪聲性能。

Su, j. p. and c. y. liang, 2001, complementary sliding mode control of a class of nonlinear cascade systems, the 40th sice annual conference, nagoga, japan

非線性串級系統互補式滑動模式控制， 90年全國自動化科技研討會，雲林虎尾技術學院

On account of the low q - factor and small tuning range of the p - n junction varactor, the inversion - mode mos varactor is used in the lc voltage controlled oscillator in this thesis. the simulation results show that the designed lc voltage controlled oscillator has 15 % tuning range

3 .由於lc壓控振蕩器中的pn結變容管品質因數低、調諧范圍小，本次設計的lc壓控振蕩器採用了強反型mos變容管，模擬結果表明，所設計的lc壓控振蕩器具有15 %調諧范圍。

Finally we focus our attention on studying the emission spectrum of two atoms driven by a single - mode field in an ideal cavity. we showed that the atomic emission spectrum is insensitive to the phase of field for the two atoms initially in the coherent superposition state tf / = v2 / 2 ( j +, - ) h ? + } ), when the two atoms is initially prepared in ( fs * } = cos ( 0 / 2 ] +, + ) + sm ( 0 / 2 ) ei ' p -, - ), the atomic emission spectrum is associated with not only the field photon - number distribution and the atomic populations, but also the phases of the field and the atomic dipole

接著考察了好腔中由單模量子場驅動的雙原子發射譜，結果表明初態為的雙原子發射譜與驅動場的相位無關；而初態為的雙原子發射譜不僅與光場的光子數分佈以及原子的布居數有關，而且依賴于光場的相位以及原子偶極矩的相位，並且在適當的條件下，壓縮真空場可將雙原子俘獲在相干疊加態。

5. combining with field test, the author disputes load transfering mechanism and mode of failue about cement power - sprayed, and studies the relationship of n ( the stress ratio of piles to soil ) to load p. at last, the author summizes the factors to effect n

作者結合現場試驗，對粉噴樁荷載傳遞機理和破壞模式作了探討，對粉噴樁的樁土應力比n與荷載水平p的關系進行了研究，並對影響樁土應力比的因素作了歸納總結。

The overriding principle of program ( p ) mode in flash photography is that the camera tries to set a high shutter speed so that you can hold your camera by hand and not rely on a tripod

擋下使用閃光燈的優先原則是相機設定盡可能高的快門速度使得你可以手持拍照，而不用三角架。

Focusing on the performance evaluating and the design of tripropellant injector, adopting the cold test rig with background pressure supply, malvem particle analyzer, ccd photography system, tripropellant hot test - bed, numerical simulation software and auxiliary theoretical a nalysis, the d ischarge c haracteristic a s w ell a s a tomization p erformance o f the injector and the combustion performance as well as the mode - transition characteristic of thrust chamber are studied detailedly based on the 3 different structures of coaxial tripropellant injector, large numbers of important conclusions are gained

本文圍繞三組元噴嘴的性能評定及設計方法。採用反壓冷試臺、馬爾文測粒儀、 ccd高速攝影系統、三組元發動機熱態試驗臺、數值模擬程序及輔助理論分析等多種技術手段和研究方法，對三種結構的同軸式三組元噴嘴深入進行了噴嘴流量特性和霧化特性、推力室燃燒性能和轉工況性能研究，得到了大量重要結果。

One droplet per pulse transfer in gmaw - p is the most favorable transfer mode because of its high welding quality

在gmaw - p焊中，一脈一滴過渡形式因其焊接質量好得到了大家的普遍接受。

1. added engine p 0101, p 000c, p 000d, b0600 mode for other area menu and added key program function of immobilizer for b 0600

1在其他地區功能表下增加了發動機p 0101 ， p 000c ， p 000d ， b0600四個模式同時增加了b 0600的防盜系統的配鑰匙功能。

By using the p + pr algorithm and the technique of synchronous gate operation, a mathematical model of multireach canal systems in the mode of constant water - volume control was developed ; and it was programmed to simulate the control process

摘要應用閘門同步操作技術和p + pr演算法，建立了多渠段串聯渠系並有渠側出流的等體積控制模型，並編程對控制過程進行實時模擬。

By solving possion equation, the automotive generation of 3 - d body - fitted coordinates ( bfc ) grid system is completed with its density controlled by the distribulation functions p, q, r. 4. a detailed description of the solving mode

用微分方程法生成計算網格，採用泊松方程完成無堵塞泵的三維貼體網格的自動生成，通過構造波松方程源項p 、 q 、 r分佈函數控制網格的疏密度； 4

Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范

Automatic pop up and auto flash ( fill flash, flash cancel possible ) in p mode & subject program selection mode

在p模式及主題程式選擇模式下，內置閃燈會自動彈起及自動閃光（可使用閃燈補光、閃燈取消）

The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。

According to the test conditions, the double polarity inputting mode is adopted in the circuit of voltage - frequency converting part ; storage batteries are used in the optical emission part of optical fibre isolating and transmitting device, that can guarantee isolation between the main circuit and the testing system ; the 89c51 singlechip is used in the singlechip testing - controlling unit, the peripheral circuits are extended, data are transmitted through the serial port in this part ; the p opular software delphi5. 0 is used in the pc part, the communication between singlechip and pc by serial port, plotting of current wave, regulation of data ; the optical - electrical isolating and triggering are used in the controlling part, this can guarantee the veracity and reliability of breakers triggered, this triggering mode is also used in the triggering of the main closing breaker, the tested breaker and the assistant breaker, the triggering signals are sent out by a singlechip

壓頻轉換部分電路中根據實際情況採用了雙極性輸入方式；光纖隔離傳輸裝置的光發射部分電源採用了蓄電池供電，確保了主迴路與測試迴路的完全隔離；單片機測控部分採用了89c51單片機，擴充了外圍電路，通過串口向pc機傳送數據； pc機與單片機之間的串口通訊、波形繪制、數據管理等都採用了軟體delphi5 . 0編寫。該測試系統中預留了輸出口，可以對合成迴路中的主合閘開關、被試開關、輔助開關進行觸發，信號由單片機發出，控制部分採用了光電耦合隔離觸發的方法。軟體設計主要集中在對電流信號的數據採集、數據處理、數據傳送、人機界面、波形繪制和數據管理，軟體部分又可分為單片機和pc機程序設計兩大部分。

Further ncrease in c content leads to lattice contraction, due to the solid solution in ubstitution mode, i. e. replacing si in the p structure

的b軸和c軸又幾乎相等，這都容易形成孿晶，使得界面情況變得復雜。

( 3 ) with the increase of the injected current, the lasing wavelength of fgesl appears fluctuation, the side mode suppression ratio ( smsr ) increases accompanied by an oscillation, and the p - i curve distorts slightly

Fgesl的激射波長隨ld的注入電流的增大而發生波動;邊模抑制比（ smsr ）隨注入電流的增大總體上呈現上升趨勢，但其變化過程並不平滑而是有較大的波動; fgesl的p一i曲線有微小的扭曲。

If ambient light levels are not bright ( below 10 ev ) then p mode assumes that you want to illuminate the foreground subject with the flash

如果環境光不是非常強（ 10ev以下） ， p檔假設你是要用閃光燈照亮被攝主體。

Because the camera tries to keep the shutter speed at a reasonable speed for handholding the camera you will end up with dark or black backgrounds if you take a flash photo in p mode when ambient light levels are not bright

當你使用p檔，環境光又不夠強，而相機為了手持還要使用合理的快門速度，結果是照片的背景很暗或者全黑。