p semiconductor 中文意思是什麼
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For micro - cavity semiconductor laser, station model is proposed in this paper and its steady - state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. for current noise, sp noise, noise, p noise, as well as current modulation, sp modulation, modulation and p modulation, using small - signal approximation, we derive the laser ' s corresponding transfer functions. and we calculate their signal - to - noise ratio ( snr ) gain in various parameters through frequency domain analysis in the premiss of large input snr
本文對于微腔半導體激光器，提出站模型，能夠較直觀簡潔地分析微腔半導體激光器的穩態和瞬態特性，利用此模型對具有重要實用價值的= 1的微腔半導體激光器進行了討論；對于電流i噪聲、自發發射壽命_ （ sp ）噪聲、自發發射因子噪聲、光子壽命_ p噪聲，以及電流調制、 _ （ sp ）調制、調制、 _ p調制，在小信號近似下，得到了相應的激光器的傳遞函數；在大信噪比的前提下，對激光器進行了頻域分析，分別計算了它們在不同參數下的信噪比增益，分析了其抗噪聲性能。 -
A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers
表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。 -
It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x
晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。 -
This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters
Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。 -
Semiconductor relay, p - switching or n - switching
S半導體繼電器p型開關或n型開關 -
Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor
半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范 -
Measurement of cavity loss and quasi - fermi - level separation for fabry - p 233 ; rot semiconductor lasers
腔半導體激光器的腔內損耗和準費米能級差的測量 -
With the rapid development of semiconductor, digital integrated circuit ( p, memory, standard logic gates, etc. ) and advance computer technology, the various measuring instruments ( virtual instruments ) with the powerful function of pc are produced in different industrial and scientific research fields. as we all known, the traditional instruments are usually built with discrete components and small scale ics, the disadvantages are obvious in system design, debugging and maintenance
隨著半導體技術與數字集成電路（微處理器、存貯器以及標準邏輯門電路等）技術的迅速發展，特別是隨著計算機技術的發展，在工業生產和科學技術研究的各行各業中，人們利用pc機的強大處理功能代替傳統儀器的某些部件，開發出各種測量儀器（虛擬儀器） ，傳統儀器的數字邏輯部分多是採用分立集成電路（ ic ）組成，分立ic愈多，給系統的電路設計、調試及維護帶來諸多不便。 -
The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface
發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。 -
The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter
使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。 -
The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
，面載流子濃度增大到109 / cm2的數量級，遷移率亦增大到104cm2 / v . s ，摻雜te元素改善了cdte薄膜的電學性質，使其變為良好的p型半導體。 -
Na - doped model shows the character of p - type semiconductor, and ni - doped model is n - type semiconductor
摻na后材料具有p型半導體的特性，而摻ni后則具有n型半導體的特性。 -
Tem micrographies show that tioj nanoparticles are partly coated with the polymer. we alse study effect of pani film. finally a new organic polymer stk junction i s produced by using p - type polyaniline and n - type semiconductor
最後，直接利用csa - pani濾液在導電玻璃上成膜做成器件，並對器件的性能進行了分析，這對于聚苯胺在在光電器件中應用具有指導意義。 -
Some previous experiments have showed that cavities had more efficient gettering than p - diffusion, mechanical damage and ion implantation. most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study. this technique especially applied to low - contamination process, how ever, has not been carefully studied, which should be important to the semiconductor manufacturing
而過去的工作多集中在從基礎研究的角度研究氦微孔對有意摻入金屬雜質的矽片的吸除特性，對無意引入的低濃度金屬雜質的器件吸雜效果的研究卻非常少，這方面的研究是氦微孔技術走向實際應用的必經之路。 -
This work was supported by the state science and technology ministry of the p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. recently, gallium nitride ( gan ) as a wide band gap semiconductor has attracted more and more attention and advanced rapidly, mainly due to its promising applications in short - wave light - emitting devices, photodetectors, as well as anti - radiation, high frequency and high power electronic devices
本碩士論文是基於國家科技部重點基礎研究發展規劃項目（ 973項目）子課題「硅基寬帶隙異質結構材料生長及器件研究」 （ 2000年10月- 2005年9月， no . g20000683 - 06 ）和國家自然科學基金（ no . 60046001 ）的一部分研究工作。 -
By using the least number of igbt, an up - to - date power electronic semiconductor transistor, this paper completes the circuit design of p - hev electric part. by rebuilding the existing experimental station, the paper also designs the p - hev ' s experiment system
本文用最少的電力半導體元件完成對hev動力源中電力部分的電路設計，並在現有臺架等條件的基礎上改造設計了hev實驗系統。 -
Mechanical standardization of semiconductor devices - general rules for the preparation of outline drawings of surface mounted semiconductor device packages - dimensions of p - vson
半導體器件的機械標準化.表面安裝半導體器件封裝外形圖繪制的一般規則. p - vson的尺寸 -
Mechanical standardization of semiconductor devices - part 6 - 10 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages - dimensions of p - vson
半導體器件的機械標準化.第6部分:表面安裝半導體器件封裝外形圖繪制的一般規則. p - vson的尺寸 -
Mechanical standardization of semiconductor devices - part 6 - 10 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages ; dimensions of p - vson
半導體器件的機械標準化.第6 - 10部分:表面安裝半導體器件封裝外形圖繪制的一般規則. p - vson的尺寸 -
Laser system ' s stable condition and frequency function are gained by virtue of theoretical model of a three - mirror f - p cavity and semiconductor laser, and then the mathematical model of common self - mixing interference effect is established
由三鏡f - p腔理論和半導體激光器性質得到系統的穩態條件和輸出光頻率的求解方程，從而建立了自混合干涉的數值模型。
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