p-n-p-n diode 中文意思是什麼
p-n-p-n diode
解釋
型二極體-
The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0. 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在這個異質結中， n型重摻雜3c - sic層的厚度為1 m ， p型輕摻雜sicge層厚度為0 . 4 m ，二者之間形成突變異質結。 -
However, the switching power loss of si p - i - n diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au, pt or radiation to lower the stored charge ( qs )
但是，其開關功耗隨著開關頻率的提高而增大以至於不得不採用壽命控制技術（摻金、鉑和輻照等）來降低少數載流子壽命從而降低開關功耗。 -
On the base of the study on sige material physics characteristic, sige / si hetero - junction characteristic, we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region, and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface
本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極體良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極體新結構： n ~ -區採用多層漸變摻雜和陰極側採用理想歐姆接觸。 -
With the more and more extensive application of power electronics technology, especially with the increasing frequency of main switching device, there have a higher requirement to the power switching diode. the si p - i - n diode have played an important role in these areas so many years
隨著電力電子技術應用的深入，尤其是主開關器件工作頻率的不斷提高，對功率二極體性能提出了更高的要求，多年來硅p - i - n二極體一直在這方面扮演著重要角色。
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