peak intensity method 中文意思是什麼

peak intensity method 解釋
峰值強度法
  • peak : vi 1 瘦弱;消瘦,憔悴。2 減少,縮小 (out)。n 1 山峰,山頂;孤山。2 (胡須等的)尖兒;尖端。3 最...
  • intensity : n. 1. (思想、感情的)強烈,激烈。2. 強度。3. 【攝影】(底片的)明暗度。
  • method : n 1 方法,方式;順序。2 (思想、言談上的)條理,規律,秩序。3 【生物學】分類法。4 〈M 〉【戲劇】...
  1. A peak search method named golden search rule is applied to reduce the computation intensity

    採用黃金分割快速搜索法減小計算量、提高計算速度。
  2. This paper relates to some problems about the determination of design ground motion parameters, which include the choice of the attenuation relationship of rock horizontal acceleration response spectrum, the impact of focal depth to rock peak horizontal acceleration and rock response spectrum curves, the choice of intensity envelops function and random input phase, the choice of soil nonlinearity and shear wave velocity, scale of design ground motion response spectrum etc. in the researches of relative aspect, based on a typical section plane of the engineering site, influence of the change of some parameters on design ground motion parameters and the existing errors and corresponding rules are studied by using the method of one dimension model of equivalent linearization

    摘要研究了確定設計地震動參數中涉及的若干問題,其中包括基巖水平加速度反應譜衰減關系的選擇、震源深度對基巖水平加速度峰值及基巖反應譜曲線的影響、強度包絡線函數及輸入隨機相位的選擇、土體非線性特性參數和土層剪切波速值的選擇、設計地震動反應譜的標定等問題。
  3. The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller. the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method. at the same time, it was observed that the smaller the dimension of the porous silicon, the broader energy gap of the porous silicon

    採用脈沖和直流電化學腐蝕兩種方法制備多孔硅,對這兩種方法制備的多孔硅樣品進行掃描電鏡和熒光光譜的測量,發現脈沖腐蝕制備的多孔硅樣品比直流腐蝕制備的多孔硅樣品表面均勻、顆粒尺寸小、發光強度大,而且發光峰位有明顯的藍移現象。
  4. The x - ray diffraction analysis shows films prepared by rf and ve have scattering peaks, however the peak intensity of pure cdte films prepared by css method is higher than ahead both

    而且用css方法制備的cdte薄膜晶粒度大,薄膜晶形好。利用近距離升華技術在glass / ito基片上先後沉積cds 、 cdte膜,保證cds膜的厚度< 2000
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