pecvd 中文意思是什麼

pecvd 解釋
沉積之氮化硅為之
  1. E ) with the help of pecvd, we found that high substrate temperature is advantage to the basal plane orientation. higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly

    E ）高溫有利於基面平行於襯底的取向，在高的生長溫度下吸附於襯底表面的沉積粒子能夠迅速遷移到二維核的位置，並使粒子有足夠能量調整位置。
  2. Fabrication of hydrogenated microcrystalline silicon thin films at low temperature by vhf - pecvd

    法氫化微晶硅薄膜的低溫制備
  3. The novel vertical carrier - free linear cluster system phoebus for the economical deposition of amorphous and microcrystalline silicon light absorbers by pecvd ideally combines the strengths of proven vacuum production platforms to precisely focus on the needs of solar cell producers : process stability, productivity, yield, footprint, costs of ownership

    新的立式無載體線團系統」菲波斯」 （ phoebus ） ，以pecvd方法經濟地鍍膜無定形的和微晶硅吸光體，理想地結合各種證明可靠的真空生產平臺的優點來精確的聚焦于滿足太陽能電池生產者的需求:工藝的穩定性，生產效率，合格產量率，佔地面積和擁有運營的總成本
  4. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  5. In this experiment, we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft

    本實驗在沉積柵氧化層后立即用pecvd進行多晶硅的氫化處理。
  6. Intense pl band at 300 - 570nm, whose central position was found red - shifted with the increase of o content, was observed in the a - sihxoy thin films fabricated by pecvd. thin films with strong blue pl peaks were prepared by plasma oxidation, and the result directly proved that the blue pl peaks were originated from si - o defect levels

    通過pecvd法與放電等離子體氧化技術結合獲得了主峰位於藍光波段的熒光帶，而且具有分立峰結構，其結果直接證明了藍光發射與缺陷能級有關，起源於si - o結合特定組態而形成的發光中心。
  7. The influence of sinx deposited by pecvd in different condition, especially changing deposition temperature, on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics

    用sims分析結合器件直流特性測試，比較了在不同條件下淀積的氮化硅對gaas硫鈍化表面的作用，特別是淀積溫度分別為80 、 80 / 230 、 230時對硫鈍化效果的影響。
  8. Zhang x d, zhao y, zhu f, et al. fabrication of high growth rate solar - cell - quality c - si : h thin films by vhf - pecvd [ j ]. chinese physics, 2004, 13 ( 8 ) : 1370

    汪六九，朱美芳，劉豐珍，等.熱絲化學氣相沉積技術低溫制備多晶硅薄膜的結構與光電特性[ j ] .物理學報， 2003 ， 52 （ 11 ） : 2934 - 2937
  9. We successfully make the nanosized diamond particles calculated on the cathode and get the composed materials by electrophoretic method. comparing to the pecvd method by which people make the cnt and nanocrystal diamond grow currently on the same substrate, it ’ s more simple, economic and easy to control. the main jobs are followed : 1

    實驗中採用電泳的辦法，將金剛石超微粉沉積到陰極基片上，從而制備出合成材料，此種辦法與通過pecvd方法實現基片上碳納米管與金剛石超微粉的合成材料的生長相比，更加經濟，簡單與實用，並且更加容易控制。
  10. For the nitrogen - implanted samples, the initiation of crack is greatly delayed, and crack spacing interval is small. the samples prepared by pecvd and piii technologies have been investigated using homemade gas permeation tester. the excellent barrier

    而注入件相對沉積件而言，由於沒有明顯的界面層，而表現為改性層裂紋間距小，但沒有完全開裂，具有優良的耐失效性能。
  11. In this way, parameters are prone to control, and hydrogenation ion will not escape without high temperature. in the process of hydrogenation by pecvd

    並且在後面工藝中沒有高溫工藝，這樣就使得氫化后進入多晶硅的氫不會因為高溫而逸出。
  12. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  13. Experimental studies of the fabrication of the 8 - channel 16 - channel awg with 200ghz channel spacing are carried out. pecvd icp and lift - off technology are used for fabricating si - based sio2 awg demultiplexers. samples of the fabricated awg are tested and the experimental results are obtained

    通過一系列的工藝，完成了awg晶元的製作，對awg晶元的性能進行了檢測，得到了awg器件的初步實驗結果，測試得到了awg的頻譜響應曲線，在awg器件的製作上邁出了有重要意義的一步。
  14. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  15. The proper temperature is felt about from the substrate of p ( 100 ) cz - si, and it is found that the solar cell conversion efficiency has been improved from 8. 85 % to 11. 45 % for the annealing process. suitable processing conditions for cells " fabrication, hydrogen passivation, sinx anti - reflection coating deposited by plasma enhanced chemical deposition ( pecvd ) are also studied

    將太陽電池樣品分別用pecvd （ plasmaenhancedchemicalvapordeposition ）做減反射膜，用fg （ forminggas ）燒結，測試電池性能，發現用pecvd處理后電池效率有所提高，用fg燒結后同樣有所改善。
  16. In this paper, a - si window layers doped with b2h6 or b ( ch3 ) 3 and osi window layers doped with b2h6 were prepared in a series seven - chamber rf - pecvd system

    實驗研究了工藝參數對材料性能的影響，並且考察了這幾種窗口材料在硅薄膜太陽電池上的適用性。
  17. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  18. Plasma enhanced chemical vapour technique ( hf - pecvd ) on monocrystalline silicon and quartz glass substrates under the low temperature. the effects of ultrasonic pre - treating of substrates, temperature, r. f

    系統地研究了襯底的超聲預處理工藝、沉積溫度、射頻功率以及氫氣對氮化硼薄膜的生長、組成及表面形貌結構的影響。
  19. ( 3 ) dlc films were prepared by combining psii method with pecvd method, the films got not only smooth surface morphology but also strong adhesion, in such a fashion that it was the best method

    （ 3 ）通過全方位離子注入和等離子體增強化學氣相沉積相結合，發現制備出的類金剛石薄膜既改善了表面形貌又增強了結合力，因此證明了這是一種較好的制備方法。
  20. The solution to the problem of hydrogen contained in the film was initially proposed for pecvd technique. meanwhile, the adoption of substrate bias assisted deposition further eliminated the impurity o in the film

    首次解決了採用pecvd法低溫制備? sic薄膜中的含氫問題；同時，採用偏壓輔助的技術，進一步解決了薄膜中的含氧問題。
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