photocurrent 中文意思是什麼

photocurrent 解釋
n. 名詞 【物理學】光電流。

  1. Pre - amplification of multichannel photocurrent acquisition

    多路光電流採集的前置放大
  2. The influence of ph value of electrolyte on open circuit photovoltage and short circuit photocurrent is very significant

    電解液的ph值對電池的開路電壓和短路電流也有較大的影響。
  3. Reserch on the photocurrent in the external photoelectric effect of a metal

    外光電效應中光電流的計算
  4. Test method for measuring steady - state primary photocurrent

    測量穩態原始光電流的標準試驗方法
  5. Therefore the sensitization of this dye can increase the photocurrent intensity of sno

    納米結構電極的光電流，使sno
  6. The responsivity equation can be proposed from our model and be used to explain the photocurrent gain. the research of the ppc is another highlight

    利用該模型推導了穩態光照下響應度方程，該方程能解釋在gan基msm結構紫外探測器中出現的光增益現象。
  7. Furthermore, the existing theory can ’ t explain the photocurrent gain, so the i - v characteristics under illumination are the keystone of the research work

    並且現有理論無法解釋光增益現象，因此穩態光照下電流隨偏壓變化的關系成為本文研究的重點之一。
  8. Since the current produced by light activated triode is larger, it is possible to use common microammeter to measure the photocurrent, making the experiment easier

    由於光敏三極體的光電流較大，測試光電流時，可用普通的電流表（微安表）進行測量，使實驗變得簡單可行。
  9. At the temperature of 300, the average diameter of fes2 particles is 30nm. the photocurrent of the pyrite sensitizing tio2 electrode increases as the solvothermal temperature increases

    對fes _ 2納米顆粒敏化yio _ 2電極的i - v曲線測試證明，增加反應溫度與時間有利於光電流的增加。
  10. Carries created by ultra - fast laser pulse accelerate in the field of the photoconductor and form a transient photocurrent. the shape of the photocurrent lies on the movement of the carriers, as well as the movement of the carrier ' s lies on the field in the photoconductor

    光電導體中的載流子在光電導體內的運動情況決定了所輸出電脈沖的波形，而載流子的運動是在光電導體內部電場的作用下進行的，所以光電導體內的電場對光電導開關的性能有顯著的影響。
  11. It was difficult to measure the load voltage directly between inner and outer conductor of cable induced by shield current under low flux x ray. this paper introduces a measurement, pouring a current, which was same as cable approximately photocurrent in x ray test, into the shield of cable with a triocoaxial system, and the load voltage was got. finally the measured result of typical cable and comparison with the calculation was given with a special load

    在簡要介紹屏蔽電纜的轉移阻抗和轉移導納耦合的基礎上，描述了利用三同軸系統對雙電纜和等效負載組成的電纜系統進行電流注入，模擬電纜屏蔽層發射電流，測量芯線等效負載感應信號的實驗，給出實驗結果及分析，並對理論結果與實驗進行了比較。
  12. After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened

    為了使探測器的性能得到進一步的提高，我們對其進行了電子輻照改性，並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應，並對其響應時間，后沿下降時間，半高寬（ fwhm ） ，載流子壽命，靈敏度進行對比，研究，結果顯示經電子輻照后的探測器的性能得到了改善，使響應速度，分辯率進一步提高，並消除了探測器輸出信號后沿的非線性，雖靈敏度有所降低，反而使其測量范圍得以拓寬。
  13. According to the results of experiments, the stability of detection and the significance of photocurrent normalized are discussed. how the illumination mode, the frequency and the resistance of photocurrent loop affect the response of photocurrent is analyzed in detail. and the pilot study on the real - time detection of laps system has been done

    根據實驗結果分析討論了新系統的測量穩定性，以及光照射方式、光調制頻率和光電流迴路阻抗對光電流響應的影響，以及光電流歸一化處理的重要性，並且初步研究了laps系統的實用化實時檢測。
  14. Discussion is made on photocurrent output, injection current output and zero current output for photoreceiving pn junction by means of i - v equation of photoreceiving pn junction. further survey is carried out on physical elements of the injection photodetector followed by description of some experiment subjects

    本文推導金屬球的雷達散射截面，同時討論金屬球散射的三個區域，金屬球本身是一個良好的雷達目標，同時又是測量目標雷達截面的參考標準，因此還研究了金屬球的尺寸、導電性能和球殼的厚度，給出了測量結果
  15. The photoconductive uv detectors based on zno : al thin films, having a metal - semiconductor - metal ( msm ) structure with interdigital ( idt ) configuration, were fabricated by using au as a contact metal. the characteristics of dark and photocurrent of the uv detector and the uv photoresponse of the detector were investigated

    同時， au和zno : al薄膜間已形成歐姆接觸，無光照時，暗電流很小，當用= 350nm的光照射器件時，在6伏偏壓時，光生電流為58 . 05 a 。
  16. In order to overcome the three main limitations of the conventional gaas / algaas qwips, small photocurrent, high dark current and hence high noise, and low response speed, the novel mechanism of qwips that photocurrent increases step by step with the well number ' s increasing was proposed by professor shen

    針對常規gaas algaas量子阱紅外探測器存在的光電流小、暗電流大、響應速度低等問題，沈光地教授提出了新型光電流逐級增強gaas algaas量子阱紅外探測機制。
  17. Gan - based meta1 - semiconductor - metal ( msm ) structure ultraviolet photodetector has been one of the focuses of interest in recent years for its plane structure, fabrication simplicity, and easy integration. however, the mechanisms of the i - v characteristics under illumination, the photocurrent gain and the strong persistent photoconductivity ( ppc ) are still unexplained to this day

    當前， gan基msm結構紫外探測器在穩態光照下的電流和響應度隨偏壓變化的關系、實驗中觀測到的光增益現象以及持續光電導效應（ ppc ） ，都沒有明確的理論解釋，因此器件設計中難以保證gan基msm結構紫外探測器的性能。
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