photodetectors 中文意思是什麼

photodetectors 解釋
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  1. Abstract : si - based photodetectors are the most promising devices for photoelectronics which can be integrated with microelectronics

    文摘:硅基長波長光電探測器是最有希望與微電子集成的一種用於光通信的光電器件。
  2. Detectors ( contd. ) : vertical vs. in - plane geometries. quantum well intersubband photodetectors

    垂直與平面結構。量子井次能帶間躍遷型光偵測器。
  3. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  4. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  5. Current optical chips, of the kind used as lasers in cd players and as photodetectors in telecommunications switches, are manufactured from iii - v semiconductors

    目前cd唱盤里的雷射，以及電訊開關里的光偵測器之類的光學晶片，是以第iii族與第v族半導體製成的。
  6. We fabricated the gan - - based msm photodetectors successful1 y using the 1 if t - - off technics ( 4 ) the spectrum respone, dark current, current - - voltage ui1der i 11uminatiofl of our gan - - based msm photodetectors were measured and stud ied

    用剝離工藝成功地制備了gan材料的msm光電探測器。 （ 4 ）測量並研究了msm光探測器的光譜響應，暗電流，光照?特性等。
  7. In photodetectors the wavelength response is not uniform at all wavelengths, but a threshold energy exists, determined by the semiconductor energy gap between bound and free carriers.

    光子探測器對不同波長的分光響應是不同的，但是存在一個由束縛和自由載流子之間的半導體能隙所確定的能閾。
  8. Gan has d1rect, wide bandgap und is one of the ii1ost promising lnateria1. 1t ' s good e1ectrica1, opt ica1 characteristi cs and excel1ent lllecllaniczl1 properties make it one of the most ideal choices for short wave photoe1ectron devices, such as u1 travio1et photodetectors

    Gan是最有前景的直接躍遷寬帶隙半導體材料之一，它具有優良的光電性質和優異的機械性能，被認為是制備短波長光電子器件的最佳材料之一。
  9. The primary investigation of this paper is the ohmic contact between metafs ' and gan. moreover, we have prepared photodetectors and schottky diodes based on gan

    本文的主要工作是對金屬與n型gan的歐姆接觸進行了研究，並在此基礎上制備了硅基gan上的紫外探測器和gan肖特基二極體。
  10. A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built, using steady - state continuity equations and including the effect of surface states

    通過求解一維電流連續性方程和傳輸方程，同時考慮表面態陷阱的作用，建立了gan基msm結構紫外探測器在穩態光照下i - v關系的解析模型。
  11. The trends of si - based photodetectors are presented in order to discuss the ways to improve the performance of them

    介紹了當前硅基長波長光電探測器的發展現狀和趨勢，討論了提高硅基長波長光電探測器性能的途徑。
  12. Quantum - efficiency measurement of photodetectors - based on entangled photons

    基於糾纏光子方法測量光電探測器量子效率的研究
  13. Testing of spectral sensitivity of semiconductor photodetectors

    半導體光電探測器光譜靈敏度的測試
  14. The photodetectors are widely applied in many fields for their merits

    光電探測器以其自身的優點廣泛應用於諸多領域。
  15. To date, we don " t find any report about the cubic gan - - based msm photodetectors

    目前，我們也未見有立方相gan的msm光電探測器的報道。
  16. 2 we prepared photodetectors based on gan / si and gan / al2o3 and schottky diodes on gan / al2o3. some basic research about these devices has been done

    2 、在gan上實現了msm結構的光導型紫外光探測器，並初步研究了其性能。
  17. When the photodetectors translate the reflected light to an electrical signal, the signal represents a string of ones and zeros that is encoded and modulated

    光電探測器將反射回來的光轉換為電信號，電信號為一連串的「 1 」和「 0 」構成，是編碼和的調制結果。
  18. A new method of absolute calibration of photodetector sensitivity based on spontaneous parametric down - conversion ( spdc ) biphoton field is described. the process of spdc is studied theoretically. the single photon detection probability and two - photon coincidence probability are derived and the calibration principle for photodetectors is explained. an experimental system has been set up. the sensitivity of a photon - counting photomultiplier tube was measured, and the results were compared with those obtained using conventional method

    討論了一種基於自發參量下轉換雙光子場絕對校準光電探測器靈敏度的新方法，著重推導了對自發參量下轉換過程中產生的單光子的探測概率和雙光子的符合速率，從而闡明了絕對測量光電探測器量子效率的原理.基於這一方法對光子計數型光電倍增管的響應靈敏度進行了測量，並將實驗結果與常規方法測得的結果進行了比較
  19. Device applications of physical phenomena are considered, including electrical conductivity and doping, transistors, photodetectors and photovoltaics, luminescence, light emitting diodes, lasers, optical phenomena, photonics, ferromagnetism, and magnetoresistance

    包括電導性及摻雜，電晶體、光偵測器及光伏特計，螢光、發光二極體、雷射、光學現象、光電子學、鐵磁性及磁阻性等物理現象之元件應用。
  20. In this paper, accordiflg to the working pri nci p1es of devi cg, we design the struc ture narameter of device, and then the hexagona1 and cubic gan epitaxial layers were grown. on sapp1re and gaas substrates respect ive1y. as a resu1 t, we have fabricated gan - - based msm uv photodetectors, the responsi vity of device reach 0

    本文依據msm結構探測器的工作原理，設計了器件的結構參數，並分別以藍寶石和gaas為襯底材料生長了六方結構和四方結構的gan材料，在此基礎上制備出gan - msm紫外光探測器，並取得了一些有意義的結果，我們的器件光響應度最好可達0 . 21a w 。
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