photoluminescence 中文意思是什麼

photoluminescence 解釋
n. 名詞 【電學】光發光。
adj. 形容詞 -minescent
  • e : （pl E s e s ）1 英文字母表第五字母。2 【音樂】E調，E音。3 E字形。4 〈美國〉（順序）第五等，（成...
  1. The emphasis of the article is to study the spectrum of photoluminescence and electroluminescence

    本論文主要測定薄膜的光致發光和電致發光特性。
  2. Luminescence is a general term for light emission, including photoluminescence, electroluminescence and others

    發光特性一般包括光致發光，電致發光及其它不同類型所導致的發光等。
  3. An overview of the preparation and photoluminescence properties of zno colloids, powders with different morphology and thin films was presented. quantum - size 2 - propanol zno colloids, hydrosol and powders / thin films were prepared by sol technology, and were characterized by xrd, tem, xps, ir, uv - vis, tg, afm and laser granulometry methods

    本文在系統總結zno膠體、不同形貌納米晶、薄膜的制備和熒光性質的基礎上，採用溶膠法制備了量子尺寸的zno異丙醇溶膠和水溶膠，制備了納米zno粉體及其薄膜。
  4. Study on visible photoluminescence and absorption spectra of monazite in bayan obo

    白雲鄂博獨居石的光致發光譜和吸收譜研究
  5. The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.

    光致發光過程就是高能量光子照射到晶體上之後，晶體所產生的電子一空穴對的輻射復合過程。
  6. Structure and photoluminescence of a novel assembly - zno

    組裝體結構制備及光致發光性能
  7. Microstructures and photoluminescence of er yb co - doped zno films

    薄膜光致熒光特性的影響
  8. Photoluminescence spectra of zno thin films

    薄膜材料的發光譜
  9. Nanocrystalline zno powders : preparation and photoluminescence property

    納米氧化鋅的制備與發光性能的研究
  10. Photoluminescence phenomenon during the formation of silver nanoparticles

    銀納米顆粒形成過程中的光致發光性質研究
  11. Other instruments sense a stone ' s photoluminescence in laser light

    其他儀器則是檢測寶石在雷射照射之下發出的冷光。
  12. A study on the preparation, structure and photoluminescence property of silicon - rich silica

    結構及光致發光特性的研究
  13. Comparison of ultraviolet photoluminescence characteristics between mgzno and zno thin films

    晶體薄膜紫外發光特性比較
  14. Later, the discovery of all colures photoluminescence and electric - luminescence from porous silicon and the encouraging progress in fabricating porous silicon based light - emitters has cast a new light on si - based opt - electronics

    多孔硅可能彌補單晶硅材料不能有效發光的缺點，預示了用單晶硅制備發光器件進而實現全硅光電子集成的美好前景。
  15. We have prepared a series of neodymium binary / ternary complexes, such as nd ( acac ) 3 ' 2h2o, nd ( tfa ) 3 ' 2h2o, nd ( hfa ) 3 ' 2h2o, nd ( dbm ) 3 ' h2o, nd ( acac ) 3phen, nd ( tfa ) 3phen, nd ( hfa ) 3phen, nd ( dbm ) 3phen, nd ( tta ) 3 ( tppo ) 2, nd ( hfa ) 3 ( tppo ) 2, nd ( acac ) 4hpy, nd ( tta ) 4hpy and ndq3. the effects of organic ligands, synergistic coordination agents and different substitution groups for - diketones on effective line width and photoluminescence intensity of neodymium complexes were investigated. the photoluminescence spectra indicate that synergistic coordination agents can shield neodymium ion and impede water molecules penetrating into inner coordination shell to satisfy large coordination number of nd3 + during hydrous synthesis process, so the luminescence intensity of neodymium ternary complexes is stronger than that of neodymium binary complexes

    發光光譜研究表明，由於協同試劑的參與，屏蔽了水分子參與配位，降低了羥基（ oh ）對釹離子激發態能級~ 4f _ （ 3 2 ）的猝滅，三元配合物的熒光強度均比二元配合物強，其中配合物nd （ tta ） _ 3 （ tppo ） _ 2在1340nm處的熒光強度最強，適合作為摻雜的光學活性物質，來制備有源光波導材料；在有水工藝條件下，單純地氟化配體未必能提高釹配合物的近紅外發光性能。
  16. Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon, for instance quantum confinement effect model, polysilanes model, siloxen and its derivant, surfacial states model and quantum confinement - light center model etc. in addition, study status of ps at present is addressed and applied problems in some fields are analyzed in this section

    多年來，人們對多孔硅發光機理一直進行著堅持不懈的探討和研究，提出了許多種解釋多孔硅層（ psl ）發光的模型，典型的有下列幾種：量子限制模型、硅-氫鍵或多硅烷（ polysilanes ）的發光、硅氧烯及其衍生物的發光、表面態模型和量子限制-發光中心模型。
  17. Several methods commonly used in preparing porous silicon have been represented. photoluminescence and electroluminescence ( el ) properties of porous silicon in literature are summarized. qualitative description is given for the prevalent mechanisms proposed to explain the bright pl and el

    在比較了制備多孔硅的幾種常用方法的基礎上，概括了多孔硅的光致發光（ pl ）和電致發光（ el ）特性，對目前比較流行的發光模型給出了定性的論述，展望了多孔硅的應用前景。
  18. In this work of part 1, as a main body of this dissertation, multiple experimental methods are applied to investigate the optical properties of gap1 - xnx alloys with the n composition varying from 0. 05 % to 3. 1 %. in part 2, the transient photoluminescence of iii - v semiconductor gainp and algainp alloys are studied

    隨著與氮有關的化合物半導體在短波發光器件（如藍色發光二極體和紫色激光器件等）方面的巨大應用潛力和發展， gapn作為一種新型的含氮-族化合物半導體材料，其光電性質引起了人們的關注。
  19. In the third chapter, the influence of current density, solution concentration, erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing, and with erosion time and aging time prolonging ; with the increasing of solution concentration, peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1. above phenomena can be explained by quantum confinement and light center model, but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence. at present, radiation mechanism is still one of the primary problems in the study of ps

    在第z三章中；通過對比，分析了電流密度、陽極化時間、溶液濃度以及自i然氧化時間對多孔硅光致發光光譜的影響，認為在一定的范圍內，多i孔硅的發光峰位會隨電流密度的增大而藍移，要獲得較強的發光，需z要選擇合適的電流密度；隨著腐蝕時間的延長，多孔硅的發光峰位會i發生藍移；當f酸的濃度較小q ： 1 ）時，峰位隨濃度的增大表現為向i低能移動；而當f酸的濃度較大河山時，峰位隨濃度的增大則表現z為移向高能；多孔硅在空氣中自然氧化；其發光峰位發生藍移，而強i度隨放置時間的延長而降低。
  20. Under visible light excitation titanic acid and titanate sodium nanotubes showed a relatively intense emission, which red shifts with the increase of excitation wavelength. under humid conditions this photoluminescence of titanic acid nanotubes was not stable. the intensity decreased, and the emission peak was at 480nm, which cannot shift with the change of excitation wavelength

    鈦酸和鈦酸鈉納米管在使用可見光激發時，都能產生光致發光現象，當使用不同波長的可見光激發鈦酸和鈦酸鈉納米管時，能夠得到不同強度的發光譜帶，且發光峰的位置隨著激發光的變化發生較大范圍的移動。
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