planar density 中文意思是什麼
planar density
解釋
面密度-
This dissipation process limits the maximum surface change density on a planar surface to 30μc/.
這種耗散作用限制著物體平面的最大表面電荷密度為30c。 -
Secondly, nonlinear threshold of two - dimensional rt instability was analyzed in planar and cylindrical and spherical geometries. density amplitude was defined relating to instable interface and formulae of nonlinear threshold values for rt instability in three geometries were given, then the lared - s code was used to simulate two - dimensional rt instability in three geometries and simulation results agreed well with the formulae
其次，討論了二維平面、柱和球幾何中rt不穩定性發生非線性偏離的閾值問題，給出了三種幾何中密度擾動振幅的非線性閉值公式，並且用lared一s程序進行了檢驗，計算結果表明柱和球幾何中的模藕合機制與平面幾何不同，存在幾何效應的影響。 -
High energy explosive was used to create a powerful and planar shock wave for accelerating flyer plate to high velocity, and high pressure was produced when flyer impacting with the sample. in the experiments, the impactor was brass and target was ofhc copper. by measuring the shock wave velocities of hr2 steel, high - density glass, aluminium alloy ( ly12 / lf6 ), magnesium - aluminium alloy ( mb2 ), polymethyl methacrylate and air, shock pressure and release isentrope of ofhc copper have been obtained
採用化爆加載、平面波發生器和空腔增壓技術，以黃銅為飛片，無氧銅為靶板，測量了抗氫鋼（ hr2 ） 、重玻璃（ sio _ 2 ） 、鋁合金（ ly12 lf6 ） 、鎂鋁合金（ mb2 ） 、有機玻璃（ pmma ） 、空氣（ air ）和無氧銅（ ofhccopper ）各阻抗匹配樣品中的沖擊波速度，上述材料的hugoniot狀態參數c _ 0 、均為已知，由此確定了無氧銅的沖擊加載壓力和等熵卸載后的狀態，得到了等熵卸載路徑。 -
Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大 -
Abstract : a numerical model which can evaluate the movement of each individual occupant is developed, the model which divides a building setting into planar grids can described the position of each occupant at any point of time. the movement speed and direction of each occupant are dominated by the characteristic in the grids such as density, location etc. the approach in calculating movement pattern of each occupant and the exact evacuation time have been demonstrated in this paper, the result of the simulation is more accurate than that of the other software
文摘:將建築物在平面上劃分成能反映人員具體位置的幾何坐標網格，根據不同人員在不同網格內的移動特性確定其移動速度，建立了描述人員疏散過程的數學模型，用場模擬的方法可以準確得到建築物疏散時間和人員疏散軌跡，其模擬結果與國外同類軟體對比具有較好的精度。 -
The nanowire is solid and the periphery is very clean without any coating of amorphous material. the - sic nanowires axes lie along the < 111 > direction and possess a high density of planar defects
納米線是實心的並且表面清晰不帶有任何包覆層，其軸線方向是< 111 >方向，並且在納米線內部有高密度面缺陷。 -
Due to 12 / 8 poles doubly salient permanent magnet motor, planar finite element method ( fea ) is applied to analyze the magnetic field inside the motor. and a series of static characteristics are investigated, such as field distribution, air gap magnetic density, field flux, inductance, static torque
針對12 / 8極永磁式雙凸極電機，採用二維平面有限元法對電機內磁場進行分析計算，研究了電機磁場分佈、氣隙磁密、繞組磁鏈、繞組電感、靜態轉矩等一系列電機靜態特性。
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