planar devices 中文意思是什麼
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In optics communications, integrated diffraction grating devices based on the planar lightwave circuit ( plc ) technology are one of the most important solutions for the wavelength division multiplexing ( wdm ) technology
在光通信領域，基於平面波導技術的集成型衍射光柵器件在密集波分復用系統中以其優異的性能成為了波分復用器件的主要發展方向之一。 -
On the base of studying imaging theory of lens, the imaging theory of laser confocal scanning microscopy was analyzed in detail in this paper, and the advancement of that the optical fiber was applied to the system was described ; on the base of completed the demonstration for whole project, the experiment scheme was designed ; the relationship between the main parameters of key devices and the resolution was deduced, and the requirements of coupling efficiency and vignetting effects to optical system was analyzed ; the design of optical system and the planar scanning controlling circuit was completed ; a new method was put forward to resolved the inherent non - liner scanning problem of the galvanometer scanner by using software liner controlling in circuit design, and the perfect planar scanning was realized ; at last the low noise, high multiple and non - distortion amplify circuit of photoelectric detector was completed
本文在透鏡成像理論的基礎上，系統、深入地分析了共焦掃描顯微成像的機理，論述了應用單模光纖的激光共焦掃描顯微成像系統的優點；進行了總體方案的論證，並設計確定了單模光纖激光共焦掃描顯微成像系統的總體方案；從理論上推導分析了解析度要求與試驗系統中相關器件主要參數之間的關系，分析了系統耦合效率和漸暈現象對光學系統的設計要求；完成了方案中光學系統和二維掃描控制電路的設計，並在電路設計中採用了用軟體解決檢流計式光學掃描器（振鏡）非線性問題的新方法，能夠實現較為理想的二維模擬掃描；完成了高增益、低噪聲和低失真的探測接收系統的設計和調試。 -
At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 -
Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大 -
The examples of the planar gpa pressure explosive loading devices and its applications are given
給出了可調控靶中應力波形的平面低壓化爆加載裝置的應用實例。 -
Silicon - based silica optical waveguides have many excellent advantages such as simple structure and low loss, further more they are good materials for integrated optics and have good match with optical fibers. integrated devices on silicon - based silica planar optical waveguides have been widely used and play a more important role in optical communications. integrated silica waveguides with well defined core shapes provide an efficient means of controlling both the amplitude and phase of optical signals, are widely used in production of mach - zender optical interferometer, optical splitters, awg, thermooptic switches and various kinds of filters
硅基sio _ 2光波導具有結構簡單、傳輸損耗低、易於集成、性能穩定等優點，並且能有效的與光纖耦合，是較理想的波導材料，而且其製作工藝可採用成熟的半導體微細加工技術，具有工藝簡單、重復性好、製作成本低等特點，所以這種波導日益受到人們的關注，成為光通信領域研究的熱點。 -
As the key device of a dwdm system, etching diffraction grating ( edo ) is one of the most potential types of planar waveguide dwdm devices
作為波分復用中最關鍵的器件，蝕刻衍射光柵（ edg ）是平面波導密集波分復用器件中很有發展潛力的一種。 -
Among all kinds of demultiplexers, etched diffraction gratings ( edgs ) are regarded as one of the most potential types of planar waveguide wdm devices. this phd thesis focuses on the design, simulation and fabrication of edgs for optical communications
蝕刻衍射光柵是採用平面波導技術製成的集成密集波分復用器件，它具有通道損耗低、串擾小、器件尺寸小、容易擴展通道、製作和封裝工藝相對簡單等優點。 -
The one - way orientation of planar technology means some kinds of orders that exist between the units in the schematic structures of semiconductor devices. using these orders and some other limitations derived from the practice of semiconductor technology, we can gain a unique sequence of structure units
平面工藝的方向性，意味著半導體器件結構圖中各個結構單元之間存在一定的加工先後順序，利用這些順序，並根據器件結構單元的實際情況，合理的引入工藝加工方面的限制，就可以得到唯一的結構單元加工順序。 -
The key point of the fabrication of integrated optical devices is to prepare the planar waveguide structure with high quality
在器件製作方面，最關鍵的是製作高品質的平面光波導。
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