polycrystalline film 中文意思是什麼

polycrystalline film 解釋
多晶薄膜
  • polycrystalline : 多結晶體
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. In this paper, the al3 + - doped zno thin films were prepared on na - ca - si glass substrate ( microscope slides ) by sol - gel process from 2 - methoxyethanol solution prepared by zinc acetate as premonitor, monoethanolamine as stabilizator and aluminum chloride reaction. homogenous, transparent, polycrystalline zno thin film was formed finally by diping coating conducted for film - plate on substrate, drying, pre - heat - treatment, anealing

    所用的溶膠是以乙二醇甲醚為溶劑，醋酸鋅為前驅體，乙醇胺為穩定劑反應制得，用浸漬提拉法在基體上鍍膜，經烘烤、預燒、退火，最後形成均勻、透明的多晶zno薄膜。
  2. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  3. Suitable polycrystalline znsxse1 - x film with zinc sulfide cubic structure and ( 111 ) preferred orientation that provided a good matching with the requirements of lclv were deposited on ito coated glass by mbe method. room temperature photo - responsivity measurements performed on these thin films show that

    相比于用zns和se為生長源制備的znsxsel x薄膜，採用zns和znse化合物為源材料的實驗方法制備出的薄膜性能更優良，其晶粒尺寸普遍增大，柱狀晶形更完整。
  4. Owing to its optoelectronic and chemical properties, cdte is an ideal absorber material for high - efficiency, lowcost polycrystalline thin film

    碲化鎘（ cdte ）具有良好的光電學性質和化學性質，因此成為制備高效率、低成本的多晶薄膜太陽電池理想的吸收層材料。
  5. Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared, and the mechanisms of the nucleation and growth of the films are studied. in addition, application of the film to the heat sink of power electron device is discussed

    採用輔助偏壓熱絲cvd技術，制備擇優生長的多晶金剛石薄膜，研究了金剛石薄膜的成核及生長機理，並將其應用於功率電子器件的熱沉。
  6. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  7. But polycrystalline cvd diamond films have rough and non - uniform thickness which can adversely affect their application. furthermore, it is difficulty to machining the cvd diamond thick - film

    但是， cvd金剛石膜為多晶材料，表面為雜亂分佈的晶粒的堆積，顯露出明顯的稜角，表面粗糙度大，后續加工比較困難。
  8. Annealing the v2o5thin film at 480, under l - 2pa for 20 minutes, the vo2 polycrystalline thin film with the resistivity change larger than 3 orders through the transition temperature was obtained. the transition temperature was influenced by the heating condition in vacuum

    實驗證明，選擇合適的成膜熱處理條件和真空烘烤條件是實現sol - gelv _ 2o _ 5結構向vo _ 2結構成功轉換的關鍵。
  9. 4. using our measurement system, the magnetoresistance effect of the polycrystalline film is measured

    4 .以本測試系統測試所制備的fe _ 3o _ 4薄膜的磁電阻效應。
  10. Otherwise, using the ta buffer layer can effectively reduce the surface roughness. in addition, measured by our measurement system, the polycrystalline the film has similar negative magnetoresistance effect to single - crystalline film, so it is potential to be applied in spintronic devices

    通過磁電子輸運測試系統研究制備的薄膜還發現多晶fe _ 3o _ 4具有同單晶fe _ 3o _ 4類似的負磁電阻特性，因此有望將多晶fe _ 3o _ 4薄膜應用到自旋電子器件中。
  11. Selective growth of polycrystalline diamond film by selectively seeding with nanocrystalline diamond powder

    在不同襯底上用納米引晶法選擇性生長金剛石薄膜
  12. Owing to its optoelectronic and chemical properties, cdte is an ideal absorber material for high - efficiency, low - cost polycrystalline thin film. the thesis has investigated the structure, figure and optoelectronic characteristics of cdte polycrystalline thin films, the performance of doped cdte, and the influence of their deposition and anneal process

    Cdte具有良好的光電學性質和化學性質，因此成為制備高效率、低成本的多晶薄膜太陽電池理想的吸收層材料。本文針對cdte薄膜，研究了其制備工藝、摻雜和后處理條件對薄膜結構、形貌和光電學性質的影響。
  13. It also points out that the higher electricity generating efficiency and lower cost will be obtained if polycrystalline silicon germanium ( poly - sige ) alloys is used as solar energy materials compared with polycrystalline silicon thin film ( poly - si )

    文章闡明用多晶鍺硅薄膜作為太陽能電池材料，能獲得比多晶硅薄膜太陽能電池更高的發電效率和更低的成本。
  14. The effect of a few important geometrical and physical parameters which include the length of the active region, the thickness of the active region, bulk traps, interface traps, on the tft ( thin film transistor ) characteristics of polycrystalline silicon has been investigated by using advanced two dimensional device simulation program medici

    摘要利用高級二維器件模擬程序medici分析了多晶矽薄膜晶體管有源區的長度、體內陷阱、界面陷阱、柵氧化層厚度等幾何參數及物理參數，並研究了這些參數對薄膜晶體管特性的影響。
  15. Surface wettability transition by mechanochemical treatment on polycrystalline titanium dioxide thin film

    植物葉表面非光滑形態及其疏水特性的研究
  16. It is also a part of the program " explorations and studies of polycrystalline film materials and solar cells " in " the fundamental studies of solar cells with low prices, long lives and new types " supported by 973 program of china

    本文是國家自然科學基金項目「新型結構的cds cdte多晶薄膜太陽電池研究」的起始性研究，也是973 「低價長壽新型光伏電池的基礎研究」中「多晶薄膜材料和電池的探索研究」課題的一部分。
  17. Fe _ 3o _ 4 is a kind of classic half - metallic material. it has the highest spin polarization about 84 % measured in room temperature and provides curie temperature with 858k. at present, the characteristics for single - crystalline fe _ 3o _ 4 films have been researched in detail but polycrystalline fe _ 3o _ 4 film is seldom researched

    四氧化三鐵（ fe _ 3o _ 4 ）是典型的半金屬材料，它是室溫測量條件下自旋極化率最高的半金屬材料，極化率高達84 % ，而且具有高達860k的居里溫度。
  18. High quality znsxse1 - x thin film grown at the optimized temperature had the smoothest surface with lowest rms value of 1. 2 nm and tem cross - sectional micrograph showing a well defined columnar structure. the dependence of substrate temperature, deposition rate and alloy composition to the structure of the film was discussed in the thesis. the developed theory named " quasi - structure area mode " can successfully explain the film growth mechanism of polycrystalline znsxse1 - x thin films deposited on ito substrate by mbe

    研究了採用mbe系統沉積zns _ xse _ （ 1 - x ）多晶薄膜的生長機理，分析了襯底溫度、沉積速率及薄膜組分對薄膜微結構的影響，提出的「類結構區域模型」可以較完整地解釋ito襯底上zns _ xse _ （ 1 - x ）多晶薄膜生長的機理。
  19. The latter structure is composed of polycrystalline graphite in fact. a large amount of sic > 2 single crystals with the size of lonm appears in the film when the time of the post - heating is increased to five hours

    當退火時間延長到5個小時，薄膜的結晶度和600退火一個小時的薄膜相類似，不過，薄膜中大量存在的是10nm左右的sio2晶粒。
  20. Improvement of the structure of cdte polycrystalline thin film solar cell

    多晶薄膜太陽電池的結構改進
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