positron annihilation 中文意思是什麼

positron annihilation 解釋
陽電子湮沒
  • positron : n. 【物理學】正子，陽電子，正電子。
  • annihilation : n. 1. 絕滅，消滅，殲滅。2. 【物理學】湮滅。3. 【神學】靈魂與肉體的毀滅。n. -ism 【宗教】靈魂寂滅論〈認為作惡者死後靈魂必歸毀滅〉。
  1. Study on properties of blended pvc by positron annihilation

    聚氯乙烯共混改性的正電子湮沒研究
  2. Pal positron annihilation life time

    正電子湮沒壽命
  3. Study on positron annihilation spectra of baf2 crystals by proton radiation

    氟化鋇晶體質子輻照的正電子湮沒壽命譜研究
  4. Radiation effects have been investigated up to - 30 dpa by the heavy ion irradiation simulation and positron annihilation lifetime techniques in the home - made modified 316l stainless steel and the commercially available stainless steel and tungsten, which are used as the beam window materials for the spallation neutron source in accelerator driven radioactive clean nuclear power system ( ads ). their radiation resistance properties are compared

    本工作採用重離子輻照模擬和正電子湮沒壽命測量技術研究了加速器驅動潔凈能源系統（ ads ）散裂中子源束窗材料鎢、普通不銹鋼和國產改進型316l奧氏體不銹鋼在0 30dpa輻照劑量范圍的輻照效應，並對它們的抗輻照性能作了比較。
  5. Heavy ion irradiation of 80 mev 12c or 85 mev 19f is used to simulate the proton and neutron irradiation of the beam window materials for ads. the irradiation effects are examined by the positron annihilation lifetime technique

    在ads散裂中子源束窗材料輻照效應研究中，使用80mev的~ （ 12 ） c或85mev ~ （ 19 ） f離子模擬中子及質子輻照在束窗材料中產生的輻照損傷。
  6. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
  7. The basic idea of positron imaging is injected chemical compounds labeled with positron - emitting nuclides into a body, then the distribution of the nuclides from the annihilation of positron and electron can be measured

    可見，正電子成像系統的相關研究可由兩部分組成：成像裝置的研究、圖像重建的研究。本論文正是針對這兩個方面。
  8. Damage evolution law study by micro - parameter of dislocation cell and positron annihilation life

    用位錯胞及正電子湮沒壽命為參量的損傷演變律
  9. Positron annihilation analysis of epoxy hydroxyl terminated butyl nitrile rubber ep htbn system

    開關機系統的控制採用基於實驗物理和工業控制系統
  10. In czochralski silicon crystals ( czsi ) through fast neutron irradiation, formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ), positron annihilation technology ( pat ) and scanning electron microscope ( sem ). the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron, positron annihilation average lifetime of samples increased with increasing of irradiation dosage. positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n. cm - 2 tended to constant

    本文對直拉硅樣品進行了不同劑量的快中子輻照，在硅中引入大量的亞穩態缺陷，研究這些亞穩態缺陷的形成，並在較寬的溫度范圍內對輻照樣品進行了退火處理，研究退火后亞穩態缺陷的轉化及同硅中氧的相互作用，應用傅立葉變換紅外光譜技術（ ftir ） 、正電子湮沒技術（ pat ）和掃描電鏡（ sem ）進行了測試。
  11. In this paper, the high frequency c - v, the annihilation of slow positron beam and the infrared reflectance techniques were used to study the property of interface in sio2 / sic, the defects in sio2 and their physical characteristics

    首先使用高頻c - v測試技術，在有光照和無光照的條件下，對p型和n型sio _ 2 sic的電容-電壓特性作了研究。
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