post annealing 中文意思是什麼
post annealing
解釋
割後退火-
Then, by annealing, the si / sic / sich nano - composite films are prepared. the influence of the post - heating on the microstructure of the films has systematically been studied by the means of the measurements of hrem. the nano - crystals are found embedded in the amorphous matrix in the unannealed sample and the crystallinity is not high
以硅烷和乙烯為原料氣採用常壓化學氣相沉積制備得到si / sic復合薄膜，並使用退火處理方法對該薄膜進行后處理，最終得到si / sic / slo ：納米鑲嵌復合薄膜。 -
The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %
以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient
本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。 -
The la - modified thin films with 220nm thickness exhibited diffuse phase transition through the testing of temperature dependence of dielectric permittivity. the abnormal dielectric phenomenon was explained according to the observed relaxor behavior. the influence of post - annealing on the properties of the ferroelectric thin - film capacitors is another component of this thesis
在薄膜的介電性質方面，通過對介電溫譜的測試，發現對于厚度薄至220nm的薄膜，摻鑭后同樣會導致馳豫型的鐵電相變，並依此解釋了介電常數的「反常」現象。 -
First, we prepared amorphous bacacuo precursor thin films on single crystal laalo3 ( 001 ) substrate by rf magnetron sputtering. then tl2ba2cacu2o8 hts thin films were obtained by an ex situ post annealing
本文採用射頻磁控濺射法在laalo3 （ 001 ）單晶基片上制備了bacacuo非晶前驅物薄膜，然後將前驅物薄膜進行非原位鉈化處理，制備了tl2ba2cacu2o8高溫超導薄膜。 -
In the first step, effect of the target ' s components on properties of thin films was investigated. influences of tl2o partial pressure and thallination temperature on the component phases and properties of tl2ba2cacu2o8 hts thin films were studied in the second step of ex situ post annealing treatments
在濺射沉積前驅物薄膜的過程中，研究了靶材成分對薄膜性能的影響；鉈化后處理過程中，研究了tl2o分壓和鉈化溫度對tl2ba2cacu2o8高溫超導薄膜相組成及其性能的影響。 -
Effects of un - doped layer thickness, doped concentration and post - deposition annealing temperature of the complex layer on solar cells performance have been studies
著重研究了復合層中本徵層厚度、摻銅濃度和后處理溫度對太陽電池性能的影響。 -
The main topic of this thesis is to deposit the lacamno3 films using the pulsed laser deposition ( pld ) technique, and to improve the properties of the films through a serials of processes including the post annealing treatments. at last, the relation between the physical properties and the film making processes of the materials are discussed and some possible applications explored
本論文的任務就是利用脈沖激光沉積lacamno _ 3薄膜，並通過退火等一系列工藝處理提高薄膜性質，最終製作測輻射熱儀的敏感元件，同時也對材料的物性展開討論，以探尋更多的應用。 -
When irradiation response and dose are linear, total dose radiation and post - irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory
研究結果表明，輻射響應與吸收劑量成線性關系時，在實驗室選用任一特定劑量率進行總劑量輻射和輻照后室溫退火，可以通過線性響應理論模擬其它劑量率輻射下的總劑量效應。 -
Superconducting mgb2 thin films were fabricated on single - crystal sapphire substrate by hfcvd and hpcvd, respectively. the experiments were carried out both in situ and ex situ. in situ method refers to acquiring mgb2 thin films directly during the deposition process. ex situ method is defined as obtaining mgb2 thin films indirectly by post - annealing of precursor b film in high mg vapor pressure at high temperatures
實驗分原位法和非原位法兩種工藝，原位法是在薄膜沉積過程中直接生成了mgb2超導薄膜；非原位法是先在基片上沉積前驅物b膜，然後將b膜在mg蒸氣中高溫退火得到mgb2超導薄膜。 -
The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure
實驗結果表明，用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜；用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜；將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火，制備了臨界溫度為37k的mgb2超導薄膜。 -
Ptmn has practically been used as anti - ferromagnetic layer to pin ferromagnetic layers because of its large exchange bias, high blocking temperature and excellent thermal stability. on the other hand, ptmn films deposited by magnetron sputtering without substrate heating require a relatively high temperature post - deposition annealing in magnetic field to induce a unidirectional exchange field hes
由於ptmn反鐵磁材料具有大的交換偏置，比較高的blocking溫度和較好的熱穩定性，在自旋閥結構中ptmn已經在實際應用上用來釘扎鐵磁層。
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