power band 中文意思是什麼

power band 解釋
功率帶
  • power : n 1 力，力量；能力；體力，精力；（生理）機能；〈常 pl 〉才能。2 勢力，權力，權限；威力；政權；權...
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. Band wheel pumping power

    深井泵抽油的皮帶驅動
  2. Compared with traditional mechanical and optic gyros, hrg has such advantages as no high speed circumvolving or moving parts in structure, no warm - up time and short start - up time, wide signal band in frequency, low excursion noises, great endurance in over loading, nuclear radiation and short time power off, small bulk, light weight, low power cost and long life, which is suitable for space applications

    與傳統的機械陀螺和光學陀螺相比，半球諧振陀螺具有如下優勢:結構上無高速轉子、無活動部件;不需預熱，啟動時間短;信號頻帶寬，漂移噪聲低;能承受大的機動過載;抗核輻射，並可經受短時間電源中斷的影響;體積小，重量輕，功耗低，壽命長，非常適合空間應用。
  3. Design of the electron gun for s - band high power twt

    波段大功率行波管電子槍設計
  4. Another attribute is the flux or radiant power that can be delivered in that narrow frequency band.

    另一個性質就是在這樣窄的頻帶內可以給出很高的光通量或輻射功率。
  5. In the sub block circuit design, the contents that the author had introduced include : the principle of band gap voltage reference and the design technique in low power supply ; the analysis of spike pulse noise rejection, frequency divider and dead time in oscillator and control circuit ; the selection of the width and length ratio of four switches and 2x / 1x mode change point in driver and mode selection circuits

    在子電路設計中，作者比較深入分析的內容有:基準電路的原理及低電源電壓下基準電路的設計;振蕩器和控制電路中尖峰脈沖噪聲抑制、兩分頻電路及死區時間設定;驅動及模式選擇電路中開關管的寬長比的選擇及模式轉換點的設計。
  6. Elliptical waveguides have found wide applications in a variety of microwave components : waveguide filters, radiators, resonators, and wide - band transmission lines, etc. periodic - loaded waveguides play very important roles in high - power microwave tubes, corrugated antennas and linear accelerators

    在各種微波器件如濾波器、輻射器、諧振器和寬帶傳輸線中橢圓波導有著廣泛的應用。周期加載波導在高功率微波管、波紋喇叭和線性加速器等中起著重要作用。
  7. The experimental result expresses that the frequency doubler - power amplifier sets of ka - band can supply good local oscillation source for " millimeter - wave front - end of " lmds " ". the model has the advantages of low cost, small size and high reliability

    實驗結果表明，倍頻放大組件能夠為lmds毫米波前端提供很好的本振源，並且具有成本低、體積小、可靠性高等優點。
  8. General specification for lx band solid - state pulse power modules

    Lx波段固態脈沖功率模塊通用規范
  9. The “ meiji restoration ” did not last long : a new band of oligarchs and militarists swiftly gathered real power back

    但是「明治維新」卻未能持續很長時間，因為新的寡頭政治家和軍國主義者又迅速的掌握了實權。
  10. With the rapid development of the semiconductor technology, large of the vacuum electronic device has replaced by the semiconductor element from the middle period of the last century. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and wide frequency band and high power field, especially in the exceed - high power field. the complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被半導體器件取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  11. It is designed according to electrical stove or microwave oven request. heating pipe adopts high temperature resistance mgo powder as the insulation medium and the stainless steel case is passed oxidation deal through the advanced web band protection oven 1050c in order to become the a special oxidation layer and improve the high temperature oxidation and bittern corrosive performance of the heating pipe. the heating tube has high power density and strong heat radion. this product with good safe performance can work normally after 3000hrs life test

    加熱管選用耐高溫氧化鎂作絕緣介質，不銹鋼外殼經過先進的網帶氣體保護爐1050的氧化處理，形成一種特殊的氧化層，提高電熱管的抗高溫氧化及鹽鹵的腐蝕性能。電熱管的功率密度較高，熱輻射能力強。產品經長達3000h的壽命試驗后，仍能正常工作，安全性能好。
  12. 1. mark the rated voltage of the heating band on the scutcheon and don t make a mistake when connecting the power

    1 ，電加熱帶線的額定工作電壓均在標牌上標明，安裝時不得接錯電源：
  13. Duo to the intrinsic characteristics of the gaas material, serai - insulating ( si ) gaas photoconductive semiconductor switches ( pcss " s ) have more obvious advantages in the performance of both high power and ultra - fast switching than those pcss " s made of other materials and then can be widely used in ultrahigh speed electronics, field of high power microwave generation and pulse forming ( pulse sources of high power ultra - fast electromagnetism, ultra - wide - band microwave generator )

    半絕緣gaas光電導開關（ photoconductivesemiconductorswitches簡稱pcss ' s ）具有兼備寬頻帶和高功率容量特性，使其在超高速電子學和大功率脈沖產生與整形技術領域（大功率亞納秒脈沖源、超寬帶射頻發生器等）具有廣泛應用前景。
  14. In the first part of the paper, the explicit form of difference equation and periodic boundary condition is derived in cartesian coordinate system. secondly, the dispersive characteristic is analyzed in cylinder coordinate system for many high power microwave devices use cylinder sws. and then the method is extended to calculate the band structure of 2 - d photonic crystal, a modified yee ’ s grid is introduced to calculate the dispersive characteristic in the case of triangular lattice, so that both square lattice and triangular lattice cases can be solved in cartesian coordinate system

    周期電磁結構的一個重要應用就是用作高功率微波器件中的慢波系統，考慮到目前大部分高功率微波器件的慢波系統多採用圓柱周期結構，在論文第四章中，在圓柱坐標系下，給出了差分方程和周期性邊界條件的具體形式，同時編寫程序，分析了milosws ，盤荷慢波結構的色散特性。
  15. The center frequency of the vco is 14. 14ghz with band width of more than 100mhz. the output power is 2 ~ 6mw

    根據測試結果，該vco電路的中心頻率為14 . 14ghz ，調頻帶寬大於100mhz ，帶內輸出功率在2 6mw之間。
  16. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  17. A high efficiency dual - band rf power amplifier has an output and / or input of a high frequency transistor well terminated at the second harmonic frequency for dual - band operation

    本發明乃一種高效率雙頻射頻功率放大器，提供高頻電晶體的輸出端與?或輸入端于雙頻操作中有良好的二階諧波終止。
  18. Chapter 2 introduces the principle theory of lna, harmonic mixer, multiplier, spdt, vco and the basic design flows of the ads examples ( x - band ), the power combine technology, the millimeter - wave power amplifier mmics ’ trends nowadays

    第三章介紹了毫米波前端中無源電路的設計，包括毫米波窄帶濾波器的設計、微波和中頻濾波器的設計、波導到微帶的過渡、微波信號的層間過渡。
  19. The main products are just like electric heater for freezer, metal heating tube, heating band cable, rv rvv wire and cable series, power cord plug cable, component for thermoatat, temperature sensor etc

    公司現主導產品為家用冰箱電加熱器金屬管電加熱器電熱帶發熱電纜rv rvv系列電線電纜電源線插頭限溫器組件溫度傳感器組件等。
  20. In active section, in order to meet performance of out put power above 10dbm, the power amplifier module of ka - band is fabricated by using hmc283 to achieve the 14db conversion gain. there are five parts that include of waveguide - to - microstrip ? mixer ? filter ? power amplifier and waveguide - to - microstrip. input signal ' s power is 10dbm, after it pass waveguide - to - microstrip, it ' s frequency is escalate from 30ghz to 35ghz

    該組件由五個部分組成：功率為10dbm信號經過波導? ?微帶過渡，然後混頻，濾波將30ghz提高到35ghz濾除不需要的諧波鏡頻以及三階交調信號，為了彌補混頻濾波的變頻損耗，加一級功率放大器，此放大器採用hittle公司hmc283晶元，此上變頻放大組件完成了上變頻?濾波?放大功能。
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