power semiconductor device 中文意思是什麼

power semiconductor device 解釋
電力半導體器件
  • power : n 1 力，力量；能力；體力，精力；（生理）機能；〈常 pl 〉才能。2 勢力，權力，權限；威力；政權；權...
  • semiconductor : n. 【物理學】半導體。
  • device : n. 1. 設計，計劃；方法，手段。2. 〈pl. 〉意志，慾望。3. 謀略，策略，詭計。4. 器具，器械，設備，裝置。5. 圖案，圖樣；花樣；紋章；標記，商標；（紋章上的）題銘。
  1. Heat sink for power semiconductor device part 2 : measuring method of thermal resistance and input fluid - output fluid pressure difference

    電力半導體器件用散熱器第2部分：熱阻和流阻測試方法
  2. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  3. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  4. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  5. Selecting guide of heat sink for power semiconductor device

    電力半導體器件用散熱器選用導則
  6. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  7. With the rapid development of the semiconductor technology, large of the vacuum electronic device has replaced by the semiconductor element from the middle period of the last century. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and wide frequency band and high power field, especially in the exceed - high power field. the complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被半導體器件取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  8. From the middle - later period of the last century, with the rapid development of the semiconductor technology, large of the vacuum electronic device was replaced by the semiconductor element. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and high power field. this complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被其取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  9. The housing device of this generic type for accommodating at least one circuit arrangement, in particular a power semiconductor module or the like, has housing areas which are designed for the arrangement of, in particular, live contact elements and which each provide a number of arrangement positions for this purpose

    這種通用普通類型的外殼器件至少用於裝填一個電路裝置，特別是電源半導體模塊或類似物，在該外殼器件中設計有外殼區域，該外殼區域尤其是用來放置帶電的接觸單元，並且其每個都提供有多個此類放置位置。
  10. Electrotechnical terminology. power semiconductor device

    電工術語電力半導體器件
  11. Heat sink for power semiconductor device part 1 : casting kind series

    電力半導體器件用散熱器第1部分：鑄造類系列
  12. Heat sink for power semiconductor device part 3 : insulators and fasteners

    電力半導體器件用散熱器第3部分：絕緣件和緊固件
  13. Abstract : igct is a kind of new ideal medium - voltage and high power semiconductor switching device. it has the advantages of high voltage, high current, low conducting loss, high switching frequency and easy sevies connection. therefore it is suitable for medium - voltage inverters with wide application prospects in the mine

    文摘: igct是一種新的理想的中壓大功率半導體開關器件，它具有高電壓、大電流、低導通損耗、高開關頻率、易於串聯優點，因此適用於中壓變頻，在煤礦具有廣泛的應用前景。
  14. Selection guidance of case for power semiconductor device

    電力半導體器件用管殼選用導則
  15. Case for power semiconductor device

    電力半導體器件用管殼
  16. Semiconductor discrete device. detail specification for type 3da150 high frequency and power transistor

    半導體分立器件. 3da150型高頻功率晶體管詳細規范
  17. Aeronautical static inverter ( asi ) is a kind of static converting device, which converts the dc ( 27v / 270v ) in the main power of aircraft into ac of constant - voltage and constant frequency by means of power semiconductor devices. with the development of the aircraft, all the electric equipment on the plane requires the power supply system with better performance

    航空靜止變流器（ asi ? aeronauticalstaticinverter ）是航空電源系統的二次電源，其作用是將飛機主電源直流電27v或270vdc變換成恆壓恆頻單相115v 400hz ，單相36v 400hz ，三相115v 200v ，或三相36v交流電，供飛機上負載使用。
  18. We find that there usually exist peaks in the electric derivative curve and optic derivative curve of high power semiconductor laser, these two kinds of peaks are related properly, the peaks with reliability of device. while the peaks with relation with the reliability of device, while the peaks with same direction are usually related to the inner defects, same directin are usually related to the inner defects, carrier leakage and current leakage, so, the device with same direction peaks is usually unreliable one

    （ 2 ） m 、 h值大， b值小的器件是質量和可靠性不好的器件（ 3 ）導數曲線上的峰與光導數曲線上的峰相對應，反向峰通常與器件的可靠性無關，而同向峰的存在於器件的質量和可靠性密切相關，有同向峰的器件通常是質量不好的器件，這類器件老化后特性明顯變差，這意味著導數曲線上的同向峰可以作為高功率半導體激光器可靠性篩選的一個輔助判據。
  19. Unique power supply modules designed by combining semiconductor device technologies with power supply circuit know - how provide highly functional and unique solutions for applications in information and communication equipment

    電源技術電源迴路技術融合情報通信機器分野向極高機能提供。
  20. In this paper, a parallel - resonance induction heating power for equipments that used to grow laser crystal has been developed, it applies power electronics theory and adopts full - controllable electric semiconductor device igbt

    本文基於電力電子理論，採用全控型電力半導體器件igbt ，研製了適用於激光晶體生長設備的中頻感應加熱電源。
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