prepared atmosphere 中文意思是什麼

prepared atmosphere 解釋
預制氣氛
  • prepared : adj. 1. 有準備的，準備好的。2. 精製的，特別處理過的。adv. -ly
  • atmosphere : n. 1. 大氣；大氣層，氣圈；空氣。2. 四圍情況，環境，氣氛。3. （藝術品的）基調，風格。4. 氣壓。5. 【化學】霧。
  1. She prepared the iced water which he was in the habit of constantly drinking, - for since his sojourn at the kiosk he had been parched by the most violent fever, - after which she anointed his white beard with perfumed oil, and lighted his chibouque, which he sometimes smoked for hours together, quietly watching the wreaths of vapor that ascended in spiral clouds and gradually melted away in the surrounding atmosphere

    她給他調配他常飲的冰水，因為自從來到水寨以後，他就接連發高燒。她用香油塗抹他的白胡須，為他點燃長煙筒，他有時會連續幾小時拿著煙筒抽個不停，靜靜地望著煙圈冉冉上升，變成螺旋形的雲霧，慢慢和周圍的空氣混合在一起。
  2. The long afterglow luminescent material of sr2mgsi2o7 was prepared by sintering at high temperature under the deoxidization atmosphere

    首先，採用高溫固相法，在還原氣氛下制備出sr _ 2mgsi _ 2o _ 7基長余輝發光材料。
  3. Then the molybdenum disulfide nanoparticles which size was in the range of 20 - 30 nm were prepared by the desulfuration of molybdenum trisulfide if taking hydrogen as a protection atmosphere at some temperature. the mos2 nanoparticles were then characterized by x - ray diffraction and transmission electron microscope. the mos2 nanoparticles and commercial common mos2 particles ( c. a

    將乾燥后的三硫化鉬粉末在氫氣保護氣氛條件下，加熱脫硫得到粒徑在20 30nm之間的納米二硫化鉬顆粒，用x射線衍射儀（ xrd ）和透射電子顯微鏡（ tem ）對二硫化鉬納米顆粒進行了表徵。
  4. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  5. A series of preparation conditions and parameters were systematically studied. it is concerned that the effects of prepared method of precursor, material synthesize method, fired atmosphere, fired temperature, fired time, flux kind and content, rare earth concentration and kind and matrix on the microstructure and optical storage properties of the samples. at the same time, the optical storage mechanism was discussed in certain extent

    系統地研究了一系列的工藝條件及參數，討論了前驅物制備方法、材料合成方法、灼燒氣氛、灼燒溫度、灼燒時間、助熔劑種類及含量、稀土摻雜濃度及種類、基質成分對樣品微觀結構及光存儲性能的影響，同時對樣品的光存儲機理作了一定程度的探討。
  6. He two - day retreat celebrating ching hai day had just ended, and in this pleasant atmosphere, fellow initiates prepared and enjoyed a japanese - style gourmet meal. reluctant to leave, they gathered in small groups, chatting cheerfully like members of a big family coming together for a reunion after a long time

    海日禪二結束了，同修們在甜美的氣氛中，享用過同修們精心烹制的純正日式的美味佳肴之後，仍是依依不捨，三五相聚，暢敘友情，猶如久別重逢后的大家族一般，熱鬧得像是大年初一。
  7. The system of vpi equipment mainly includes vacuum chamber, heating unit, worktable with its drive unit, vacuum pumping unit, gas - charge unit and control unit, etc. this equipment would meet the need of al or cu matrix composites prepared by pressureless infiltration or vacuum infiltration in a high vacuum or special atmosphere

    該設備主要出密封罐、加熱系統、升降工作臺、真空系統、充氣系統、控制系統及密封罐水冷系統等組成。可以實現常見金屬基復合材料在較高真空或特定氣氛下的無壓浸滲或真空浸滲制備工藝，並可實現試樣的不同冷卻方式凝固。
  8. Antimony doped tin oxide ( ato ) and indium tin oxide ( ito ) thin films have been prepared by a sol - gel process using inorganic metal salts as precursors. the effects of heat - treatment atmosphere, temperature, time and dopant content on the electrical and optical properties of thin films were investigated. the fine patternings of the ato films were fabricated by chemical modification and sol - gel method

    本文以無機鹽為出發原料，採用溶膠?凝膠法制備了光學和電學性能較為優良的摻銻二氧化錫（ ato ）薄膜和摻錫氧化銦（ ito ）薄膜，進一步研究了熱處理氣氛、溫度、時間、摻雜量對薄膜電學及光學性能的影響。
  9. But most of the time, we have not prepared, so we are weak. we are not strong enough to walk out, so we have to stay in the negative atmosphere for a while until it dies down

    但大多時候，人們並沒有準備好，所以才很軟弱無助，沒有足夠力量克服那種情況，他們必須處在那種否定的氣氛里一陣子，直到那種氣氛消失為止。
  10. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films owing to its high deposition rate and good uniformity etc. in my experiment, zao films were prepared by dc magnetron sputtering in pure argon gas atmosphere using zno target mixed with al2o3 ( lwt %, 2wt %, 3wt %, 4wt % respectively ) and the films were figured by xrd, sem, xps, afm and ftir, uv photometer

    本研究課題以氧化鋅鋁靶為靶材，採用直流磁控濺射工藝在純氬氣氣氛中沉積zao薄膜。靶材中al _ 2o _ 3的摻雜比例分別為1 、 2 、 3 、 4 。用xrd 、 sem 、 xps 、 afm和紅外、紫外分光光度計等測試手段對沉積的薄膜進行了表徵。
  11. In the fourth chapter the pl and ftir spectra of porous silicon as - prepared and stored in atmosphere for one month were measured. the formers " pl only had single peak with lower energy while the latter appeared double peaks with a higher energy. through comparing the ftir spectra of the two samples we found si - o - si and o - si - h bonds appeared in the ftir spectra of the latter sample

    新制備的多孔硅樣品只有能量比較小的熒光單峰，存放一段時間后的多孔硅樣品則出現了雙峰;在紅外光譜中原來存在的si一h : 、 si一h 、強度逐漸變弱，出現了對應于si一o一si 、 o一si一h的新峰。
  12. The sample composition was analyzed by means of tg and x - ray diffraction. the following conclusions can be drawn from the experiments : given conditions, the sample powder that has the same xrd data as the standard fetioa can be gotten when use any method mentioned above ; the key in synthesis is to avoid the oxidation of fe2 +, so the whole process should performed under vacuum or neutral atmosphere, samples used by this study were prepared under nitrogen atmosphere ; the heat - treated time and temperature have some influence on the sample powder, results show that the proper time and temperature is 120 minutes and 1100 respectively

    研究結果表明：在合適的反應條件下，用上述三種合成方法都能得到xrd數據與標準fetio _ 3物相基本吻合的粉體；合成反應需要克服的主要問題是防止體系中fe ~ （ 2 + ）的氧化，因此，整個反應必須在真空或者非氧化性氣體保護下進行，本研究需要的樣品是在高純從保護下合成的；煅燒的時間和溫度對最終的產物也有一定的影響，研究發現：合理的煅燒時間和溫度分別為120分鐘和1100 。
  13. In this paper, firstly, monolithic materials cosb3 and bi2te3 were prepared by sparkle plasma sintering ( sps ) respectively, and at the same time the microstructure of cosb3 and bi2te3 were studied by sem ; the seebeck coefficients and electrical conductivities of monolithic materials were measured by standard - four - probe method ( ulvac zem - 700 ) in a he atmosphere simultaneously, and their thermal conductivities were investigated by laser flash method ( tc - 7000 ) in vacuum. secondly, the junction temperature of graded bi2te3 / cosb3 thermoelectric materials was optimized based on the thermoelectric transport properties of monolithic materials, also when graded materials were used in the temperature difference ranging from 300k to 800k, the length ratio of monolithic materials cosb3 and bi2te3 were optimized in theory. thirdly, graded bi2te3 / cosb3 thermoelectric materials were prepared by two - step sps sintering, and the relationship between its average seebeck coefficients and temperature were calculated by theory mo del

    均質材料cosb _ 3和bi _ 2te _ 3的電導率和seebeck系數採用標準四端子法于he氣氛下在zem - 1上同時進行測量；熱導率採用激光微擾法（ tc - 7000 ）于真空狀態下進行測量；其次，在對均質材料cosb _ 3和bi _ 2te _ 3熱電傳輸特性研究的基礎上，對結構梯度bi _ 2te _ 3 cosb _ 3熱電材料的界面溫度進行了優化；為了使結構梯度bi _ 2te _ 3 cosb _ 3熱電材料在300k至800k的溫度范圍內具有最佳的熱電性能，本研究同時對梯度結構熱電材料當中均質材料cosb _ 3和bi _ 2te _ 3材料的長度進行了優化設計；第三，通過兩步放電等離子燒結的方法制備出了結構梯度bi _ 2te _ 3 cosb _ 3熱電材料；採用理論計算的方法研究了梯度結構熱電材料平均seebeck系數和溫度的關系；同時為了驗證設計的結果，本論文對結構梯度bi _ 2te _ 3 cosb _ 3熱電材料的開路輸出電壓和熱端溫度之間的關系及梯度材料在300k至800k的溫度范圍內使用時的功率輸出進行了相應的研究。
  14. In this thesis, the history, structure. preparation method and basic properties of nano - composite materials and photoluminescence of nanocrystalline silicon have been summarized. research of the novel antireflecting energy saving coating glass has also been presented. the si / sic composite films are prepared with siht and ? 2 ^ 4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd )

    本論文全面介紹了納米材料，特別是納米鑲嵌復合材料的發展概況、特性、常用的制備方法、常見的幾種硅系納米材料以及有關納米硅材料的發光，並對新型無光污染節能鍍膜玻璃的研製和發展作了概述。
  15. By using diffusion welding method ( under certain welding parameters such as temperature, pressure, time and atmosphere, etc ) and employing rational structural control technique, a kind of 93w - ofc - tc4 - a1 - mb2 system flier - plate with good parallelism, planeness and high densification was prepared, which met the needs of initial design and the basic requirement of flier - plates

    利用平面擴散焊接法（控制一定的溫度、壓力、時間、氣氛等條件） ，同時採取合理的結構控制方法，成功實現了93w - ofc - tc _ 4 - al - mb _ 2的整體連接，得到了平面性好、平行精度高、整體緻密的波阻抗梯度飛片，滿足了設計結果和梯度飛片的基本結構要求。
  16. As a new type optical storage material, it has momentous applied value in many aspects, such as super - condense and super - speed disc storage, image storage, information treatment, optical calculation, infrared detection, infrared up - conversion imaging, radiation dose measurement, etc. in this paper, we prepared cas : eu, sm srs : eu, sm and casrs : eu, sm materials with excellent optical storage properties by wet method prepared precursor and followed rare earth direct doped method in reduced atmosphere

    作為一類新型的光存儲材料，它在超高密、超高速光盤存儲、影像存儲、信息處理、光計算、紅外探測、紅外上轉換成像、輻射劑量測定等方面具有重大的應用價值。本文採用濕法制備前驅物、然後在還原氣氛下利用稀土直接摻雜法制備了具有良好光存儲性能的cas ： eu ， sm 、 srs ： eu ， sm及casrs ： eu ， sm光存儲材料。
  17. In this paper limno2 powders were prepared via ion - exchange synthesis. the effects of synthesis conditions on structure and electrochemical behavior of limno2 were studied. we discussed the effects of reactive temperature and time, washing method and atmosphere on the performance of product and optimized synthesis condition

    採用離子交換法制備limno2 ，研究了合成條件對limno2結構和電化學性能的影響，討論了反應溫度、時間、洗滌方式和氣氛對材料性能的影響，優化了合成制備工藝條件。
  18. The micro structure of the films prepared with sih4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd ) and its influence on the photoluminescence and optical properties have systematically studied by the means of the measurements of tem hrem xps sem and raman

    對以硅烷為原料氣採用常壓化學氣相沉積制備的薄膜，利用tem 、 hrem 、 xps 、 sem 、 raman等手段系統研究了沉積溫度、退火后處理等制備工藝對薄膜微結構的影響，分析了微結構的成因。
  19. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films, owing to its high deposition rate and good uniformity etc. ito films were prepared by rf and dc magnetron sputtering in pure argon gas atmosphere, using in2o3 and in target mixed with sno2 ( 10wt % ) and sn ( 7wt % ) respectively

    其中磁控濺射工藝具有沉積速率高均勻性好等優點而成為一種廣泛應用的成膜方法。本研究課題分別以氧化銦錫靶和銦錫合金靶為靶材，採用射頻磁控濺射和直流反應磁控濺射工藝在氬氣氣氛中沉積ito薄膜。靶材中sno _ 2和sn的摻雜重量比例分別為10和7 。
  20. Fexsy particles were fabricated on the surface of tio2 by decomposing fe [ cs ( nh2 ) 2 ] 2 + in sulfur atmosphere. the characteristics of the fexsy particles prepared under different conditions were examined by means of xrd, sem, tem and eds

    對樣品進行xrd測試、電鏡（ sem和tem ）測試，研究工藝條件對fe的硫化物相組成與顆粒尺寸的影響，進而提出fes _ 2顆粒形成與生長的機理。
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