process annealing 中文意思是什麼

process annealing 解釋
低溫退火
  • process : n 1 進行，經過；過程，歷程；作用。 2 處置，方法，步驟；加工處理，工藝程序，工序；製作法。3 【攝影...
  • annealing : 熱處理
  1. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  2. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  3. Ht sub - factory : complete process of annealing, quenching, tempering, quenching and tempering, solution treatment etc

    熱處理廠：可完成退火，正火，回火，調質，固溶處理等工藝
  4. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  5. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  6. Recrystallization kinetics of the galvanized strip continuous annealing process with acceleration

    熱鍍鋅原板變速連續退火再結晶動力學
  7. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  8. Computer simulation of grain growth in two dimensions in annealing process

    退火過程中晶粒生長的二維計算機模擬
  9. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  10. The one deposited at 300 substrate temperature owns denser crystallites. during the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. when the annealing temperature gets to 800, tio2 transfers to rutile structure completely

    （ 2 ）常溫下制備的tio _ 2薄膜是無定型的， 300濺射薄膜表面有緻密的晶粒，熱處理溫度升高，晶粒變大，晶相開始轉化， 800退火tio _ 2完全轉化為金紅石結構。
  11. To find the parameters of preparation and annealing process associated with the best electrochromic properties of these films, following researches and experiments were carried out : to compare the visible light transmittance of the colored state with bleaching state of the electrochromic films which were annealed at different temperatures and for different duration, to count the dynamic optical density change, and to test the i - v relations of these films " electrochromic cycles and their colored / bleaching response time

    對經過不同熱處理溫度和不同熱處理持續時間得到的薄膜樣品的著色褪色可見光范圍內透射光譜的比較，計算薄膜動態光密度變化量的大小，測試薄膜著色褪色循環伏-安關系以及薄膜著色褪色響應時間的快慢，尋求到薄膜呈現最佳電致變色性能時所對應的制備參數與熱處理參數。
  12. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  13. In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process

    本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬鋅膜，然後通過二次退火得到了具有六角結構的高質量氧化鋅多晶薄膜材料，另外，還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬鋅膜的方法制備出了高質量氧化鋅多晶薄膜材料和mgzno合金薄膜材料。
  14. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  15. Abstract : the main equipment structure, process characteristics and controlled method of posco stainless steel co., ltd annealing and pickling line are introduced its process and process parameters are introduced too

    文摘:介紹了張家港不銹鋼有限公司退火酸洗機組各主要設備、結構特性及工藝特點，並介紹了工藝流程及技術參數。
  16. The accidental quenching, occurring in the sintering process, will make the steel back of a powder alloy brake lining brittle and useless. in this paper, an annealing process has been adopted to regain the plastic property of the steel back while the other properties of cg03 brake linings are still remained

    粉末合金剎車片在燒結後有時會意外淬火，造成剎車片鋼背脆化而報廢.採用一種退火工藝，在保持剎車片其它性能的同時，使剎車片鋼背恢復塑性
  17. Process of normalizing and annealing of iron and steel

    鋼鐵的正火與退火工藝
  18. Based on the comparing analysis and character of clustering algorithm the simulated annealing （ sa ） algorithms was applied to the data clustering. simulated annealing （ sa ） algorithms are random search techniques based on physical annealing process, which can prevent the optimizing process into local optimization and get the global optimization

    演算法以優化過程的求解與物理退火過程的相似性為基礎，通過接受準則和對下降溫度的控制，能夠有效的克服優化過程陷入局部極小從而獲得全局最優解。
  19. Thirdly, integrating bell - type scheduling investigation of domestic and overseas documents, the paper defines optimized scheduling production of bell - type annealing process as the problem of parallel machine scheduling with resource - constrained and multi - step working procedure, whose optimized function of objective function is given also. furthermore, the author constructs bell - type optimized scheduling model by means of the way combing discrete event simulation with algorithm of intelligent optimization

    本文在綜合國內外對于罩式爐調度研究的基礎上，將罩式爐退火過程優化排產定義為資源受限多步工序并行機器調度問題，並定義了優化目標評價函數；將面向對象的離散事件建模模擬方法和智能優化方法相結合建立了退火爐優化排產模型。
  20. A simple and economical oil removal process is introduced. in oil removal equipment, the profiled hinge is prinkled high - efficiency detergent and cleaned mechanically. surface quality of finished profiled hinge is improved with no black carbide films attached after annealing

    介紹了簡便、經濟的除油脫脂方法? ?在機械除油裝置中噴淋高效清洗劑，用機械擦試的方法清洗鉸鏈異型材，使成品退火后的異型材無碳化黑膜附著，從而提高其表面質量。
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